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Author: D.K. Bowen Publisher: CRC Press ISBN: 0203979192 Category : Technology & Engineering Languages : en Pages : 263
Book Description
The rapid growth in the applications of electronic materials has created an increasing demand for reliable techniques for examining and characterizing these materials. This book explores the area of x-ray diffraction and the techniques available for deployment in research, development, and production. It maps the theoretical and practical background necessary to study single crystal materials using high resolution x-ray diffraction and topography. It combines mathematical formalism with graphical explanations and hands-on advice for interpreting data, thus providing the theoretical and practical background for applying these techniques in scientific and industrial materials characterization
Author: D.K. Bowen Publisher: CRC Press ISBN: 0203979192 Category : Technology & Engineering Languages : en Pages : 263
Book Description
The rapid growth in the applications of electronic materials has created an increasing demand for reliable techniques for examining and characterizing these materials. This book explores the area of x-ray diffraction and the techniques available for deployment in research, development, and production. It maps the theoretical and practical background necessary to study single crystal materials using high resolution x-ray diffraction and topography. It combines mathematical formalism with graphical explanations and hands-on advice for interpreting data, thus providing the theoretical and practical background for applying these techniques in scientific and industrial materials characterization
Author: André Authier Publisher: Springer Science & Business Media ISBN: 1461558794 Category : Science Languages : en Pages : 419
Book Description
This volume collects the proceedings of the 23rd International Course of Crystallography, entitled "X-ray and Neutron Dynamical Diffraction, Theory and Applications," which took place in the fascinating setting of Erice in Sicily, Italy. It was run as a NATO Advanced Studies Institute with A. Authier (France) and S. Lagomarsino (Italy) as codirectors, and L. Riva di Sanseverino and P. Spadon (Italy) as local organizers, R. Colella (USA) and B. K. Tanner (UK) being the two other members of the organizing committee. It was attended by about one hundred participants from twenty four different countries. Two basic theories may be used to describe the diffraction of radiation by crystalline matter. The first one, the so-called geometrical, or kinematical theory, is approximate and is applicable to small, highly imperfect crystals. It is used for the determination of crystal structures and describes the diffraction of powders and polycrystalline materials. The other one, the so-called dynamical theory, is applicable to perfect or nearly perfect crystals. For that reason, dynamical diffraction of X-rays and neutrons constitutes the theoretical basis of a great variety of applications such as: • the techniques used for the characterization of nearly perfect high technology materials, semiconductors, piezoelectric, electrooptic, ferroelectric, magnetic crystals, • the X-ray optical devices used in all modem applications of Synchrotron Radiation (EXAFS, High Resolution X-ray Diffractometry, magnetic and nuclear resonant scattering, topography, etc. ), and • X-ray and neutron interferometry.
Author: Mario Birkholz Publisher: John Wiley & Sons ISBN: 3527607048 Category : Technology & Engineering Languages : en Pages : 378
Book Description
With contributions by Paul F. Fewster and Christoph Genzel While X-ray diffraction investigation of powders and polycrystalline matter was at the forefront of materials science in the 1960s and 70s, high-tech applications at the beginning of the 21st century are driven by the materials science of thin films. Very much an interdisciplinary field, chemists, biochemists, materials scientists, physicists and engineers all have a common interest in thin films and their manifold uses and applications. Grain size, porosity, density, preferred orientation and other properties are important to know: whether thin films fulfill their intended function depends crucially on their structure and morphology once a chemical composition has been chosen. Although their backgrounds differ greatly, all the involved specialists a profound understanding of how structural properties may be determined in order to perform their respective tasks in search of new and modern materials, coatings and functions. The author undertakes this in-depth introduction to the field of thin film X-ray characterization in a clear and precise manner.
Author: Govindhan Dhanaraj Publisher: Springer Science & Business Media ISBN: 3540747613 Category : Science Languages : en Pages : 1823
Book Description
Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Author: René Guinebretière Publisher: John Wiley & Sons ISBN: 1118613953 Category : Technology & Engineering Languages : en Pages : 290
Book Description
This book presents a physical approach to the diffraction phenomenon and its applications in materials science. An historical background to the discovery of X-ray diffraction is first outlined. Next, Part 1 gives a description of the physical phenomenon of X-ray diffraction on perfect and imperfect crystals. Part 2 then provides a detailed analysis of the instruments used for the characterization of powdered materials or thin films. The description of the processing of measured signals and their results is also covered, as are recent developments relating to quantitative microstructural analysis of powders or epitaxial thin films on the basis of X-ray diffraction. Given the comprehensive coverage offered by this title, anyone involved in the field of X-ray diffraction and its applications will find this of great use.
Author: Emil Zolotoyabko Publisher: John Wiley & Sons ISBN: 3527681183 Category : Science Languages : en Pages : 299
Book Description
Authored by a university professor deeply involved in X-ray diffraction-related research, this textbook is based on his lectures given to graduate students for more than 20 years. It adopts a well-balanced approach, describing basic concepts and experimental techniques, which make X-ray diffraction an unsurpassed method for studying the structure of materials. Both dynamical and kinematic X-ray diffraction is considered from a unified viewpoint, in which the dynamical diffraction in single-scattering approximation serves as a bridge between these two parts. The text emphasizes the fundamental laws that govern the interaction of X-rays with matter, but also covers in detail classical and modern applications, e.g., line broadening, texture and strain/stress analyses, X-ray mapping in reciprocal space, high-resolution X-ray diffraction in the spatial and wave vector domains, X-ray focusing, inelastic and time-resolved X-ray scattering. This unique scope, in combination with otherwise hard-to-find information on analytic expressions for simulating X-ray diffraction profiles in thin-film heterostructures, X-ray interaction with phonons, coherent scattering of Mossbauer radiation, and energy-variable X-ray diffraction, makes the book indispensable for any serious user of X-ray diffraction techniques. Compact and self-contained, this textbook is suitable for students taking X-ray diffraction courses towards specialization in materials science, physics, chemistry, or biology. Numerous clear-cut illustrations, an easy-to-read style of writing, as well as rather short, easily digestible chapters all facilitate comprehension.
Author: Zhiyong Ma Publisher: CRC Press ISBN: 135173394X Category : Science Languages : en Pages : 889
Book Description
Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.
Author: Tingkai Li Publisher: CRC Press ISBN: 1439815232 Category : Science Languages : en Pages : 588
Book Description
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Author: John E. Ayers Publisher: CRC Press ISBN: 135183780X Category : Technology & Engineering Languages : en Pages : 388
Book Description
Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.
Author: D.K. Bowen
Author: D.K. Bowen
Author: André Authier
Author: Mario Birkholz
Author: Govindhan Dhanaraj
Author: René Guinebretière
Author: Emil Zolotoyabko
Author: Zhiyong Ma
Author: Tingkai Li
Author: John E. Ayers
Author: Heather M. Volz