Author: Samares Kar Publisher: Springer Science & Business Media ISBN: 3642365353 Category : Technology & Engineering Languages : en Pages : 515
Book Description
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .
Author: Michel Houssa Publisher: CRC Press ISBN: 1420034146 Category : Science Languages : en Pages : 614
Book Description
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Author: S. Kar Publisher: The Electrochemical Society ISBN: 1566776511 Category : Dielectrics Languages : en Pages : 550
Book Description
The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author: Samares Kar Publisher: The Electrochemical Society ISBN: 1566775701 Category : Dielectrics Languages : en Pages : 676
Book Description
This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author: Howard Huff Publisher: Springer Science & Business Media ISBN: 3540264620 Category : Technology & Engineering Languages : en Pages : 723
Book Description
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.
Author: Gang He Publisher: John Wiley & Sons ISBN: 3527646361 Category : Technology & Engineering Languages : en Pages : 560
Book Description
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Author: Mikhail Baklanov Publisher: John Wiley & Sons ISBN: 0470065419 Category : Technology & Engineering Languages : en Pages : 508
Book Description
The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
Author: Mark J. Lododa Publisher: The Electrochemical Society ISBN: 9781566772709 Category : Technology & Engineering Languages : en Pages : 262
Book Description
Contains papers from a May 2000 symposium, representing the state of the art in areas of dielectric materials science and process integration. Papers are arranged in sections on low and high dielectric constant materials, covering topics such as ammonia plasma passivation effects on properties of post-CMP low-k HSQ, characterization of ashing effects on low-k dielectric films, and electron beam curing of thin film polymer dielectrics. Other subjects include characterization of high-k dielectrics using the non-contact surface charge profiler method, and processing effects and electrical evaluation of ZrO2 formed by RTP oxidation of Zr. Loboda is affiliated with Dow Corning Corporation. c. Book News Inc.
Author: Evgeni Gusev Publisher: Springer Science & Business Media ISBN: 9781402043666 Category : Computers Languages : en Pages : 508
Book Description
The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
Author: Samares Kar
Author: Michel Houssa
Author: S. Kar
Author: Samares Kar
Author: Howard Huff
Author: Gang He
Author: Mikhail Baklanov
Author: Mark J. Lododa
Author: Samares Kar
Author: Evgeni Gusev