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High Linearity 1.5-2.5 GHz RF-MEMS and Varactor Diodes Based Tunable Filters for Wireless Applications

High Linearity 1.5-2.5 GHz RF-MEMS and Varactor Diodes Based Tunable Filters for Wireless Applications PDF Author: Mohammed Ahmed El-Tanani
Publisher:
ISBN:
Category :
Languages : en
Pages : 128

Book Description
The dissertation presents tunable banpass filters in the 1.5-2.5 GHz frequency range targeted for wireless applications. The tunable filters are designed for size miniaturization, good linearity and constant absolute bandwidth characteristics while maintaining low insertion loss. The improved linearity has been demonstrated using back-to-back varactor diodes and using RF MEMS devices. The constant absolute bandwidth characteristics was achieved using a novel corrugatedcoupled lines approach and also using a localized capacitive compensation concept. In the improved linearity varactor diode design, two miniaturized tunable filters with two zeros were developed at 1.4-2.0 GHz on. The filters were built using single and back-to-back varactor diodes and compared for linearity characteristics. The single diode filter has a 1-dB bandwidth of 5 " 0.5 % and an insertion loss of 2.5-1.8 dB. The back-to-back diode filter has a 1-dB bandwidth of 4.9 " 0.5 % and an insertion loss of 2.9-1.25 dB (resonator Q of 56-125). A detailed Volterra series analysis is done on the back-to-back diode including the effect of the bias network and diode mismatches. The measured IIP3 for the back-to-back diode tunable filter is 22-41 dBm depending on the bias voltage and is 13-15 dB better than the single diode design. The power handling capabilities of both designs is explored using large signal S21 measurements. To our knowledge, these planar tunable filters represent state-of-the-art insertion loss and linearity characteristics performance with varactor diodes as the tuning elements. In the corrugated coupled-lines design, miniaturized fixed and tunable microstrip bandpass filters were developed t 1.4-1.9 GHz. The novel approach uses microstrip corrugated coupled-lines concept to synthesize a coupling coefficient which maintains a nearly constant absolute bandwidth across the tuning range. In addition, a miniaturized 2-pole varactor tuned filter is demonstrated with a frequency coverage of 1.44-1.89 GHz and an insertion loss

High Linearity 1.5-2.5 GHz RF-MEMS and Varactor Diodes Based Tunable Filters for Wireless Applications

High Linearity 1.5-2.5 GHz RF-MEMS and Varactor Diodes Based Tunable Filters for Wireless Applications PDF Author: Mohammed Ahmed El-Tanani
Publisher:
ISBN:
Category :
Languages : en
Pages : 128

Book Description
The dissertation presents tunable banpass filters in the 1.5-2.5 GHz frequency range targeted for wireless applications. The tunable filters are designed for size miniaturization, good linearity and constant absolute bandwidth characteristics while maintaining low insertion loss. The improved linearity has been demonstrated using back-to-back varactor diodes and using RF MEMS devices. The constant absolute bandwidth characteristics was achieved using a novel corrugatedcoupled lines approach and also using a localized capacitive compensation concept. In the improved linearity varactor diode design, two miniaturized tunable filters with two zeros were developed at 1.4-2.0 GHz on. The filters were built using single and back-to-back varactor diodes and compared for linearity characteristics. The single diode filter has a 1-dB bandwidth of 5 " 0.5 % and an insertion loss of 2.5-1.8 dB. The back-to-back diode filter has a 1-dB bandwidth of 4.9 " 0.5 % and an insertion loss of 2.9-1.25 dB (resonator Q of 56-125). A detailed Volterra series analysis is done on the back-to-back diode including the effect of the bias network and diode mismatches. The measured IIP3 for the back-to-back diode tunable filter is 22-41 dBm depending on the bias voltage and is 13-15 dB better than the single diode design. The power handling capabilities of both designs is explored using large signal S21 measurements. To our knowledge, these planar tunable filters represent state-of-the-art insertion loss and linearity characteristics performance with varactor diodes as the tuning elements. In the corrugated coupled-lines design, miniaturized fixed and tunable microstrip bandpass filters were developed t 1.4-1.9 GHz. The novel approach uses microstrip corrugated coupled-lines concept to synthesize a coupling coefficient which maintains a nearly constant absolute bandwidth across the tuning range. In addition, a miniaturized 2-pole varactor tuned filter is demonstrated with a frequency coverage of 1.44-1.89 GHz and an insertion loss

Advances in Filter Miniaturization and Design/analysis of RF MEMS Tunable Filters

Advances in Filter Miniaturization and Design/analysis of RF MEMS Tunable Filters PDF Author: Vikram Sekar
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
The main purpose of this dissertation was to address key issues in the design and analysis of RF/microwave filters for wireless applications. Since RF/microwave filters are one of the bulkiest parts of communication systems, their miniaturization is one of the most important technological challenges for the development of compact transceivers. In this work, novel miniaturization techniques were investigated for single-band, dual-band, ultra-wideband and tunable bandpass filters. In single-band filters, the use of cross-shaped fractals in half-mode substrate-integrated-waveguide bandpass filters resulted in a 37 percent size reduction. A compact bandpass filter that occupies an area of 0.315 mm2 is implemented in 90-nm CMOS technology for 20 GHz applications. For dual-band filters, using half-mode substrate-integrated-waveguides resulted in a filter that is six times smaller than its full-mode counterpart. For ultra-wideband filters, using slow-wave capacitively-loaded coplanar-waveguides resulted in a filter with improved stopband performance and frequency notch, while being 25 percent smaller in size. A major part of this work also dealt with the concept of 'hybrid' RF MEMS tunable filters where packaged, off-the-shelf RF MEMS switches were used to implement high-performance tunable filters using substrate-integrated-waveguide technology. These 'hybrid' filters are very easily fabricated compared to current state-of-the-art RF MEMS tunable filters because they do not require a clean-room facility. Both the full-mode and half-mode substrate-integrated waveguide tunable filters reported in this work have the best Q-factors (93 - 132 and 75 - 140, respectively) compared to any 'hybrid' RF MEMS tunable filter reported in current literature. Also, the half-mode substrate-integrated waveguide tunable filter is 2.5 times smaller than its full-mode counterpart while having similar performance. This dissertation also presented detailed analytical and simulation-based studies of nonlinear noise phenomena induced by Brownian motion in all-pole RF MEMS tunable filters. Two independent mathematical methods are proposed to calculate phase noise in RF MEMS tunable filters: (1) pole-perturbation approach, and (2) admittance-approach. These methods are compared to each other and to harmonic balance noise simulations using the CAD-model of the RF MEMS switch. To account for the switch nonlinearity in the mathematical methods, a nonlinear nodal analysis technique for tunable filters is also presented. In summary, it is shown that output signal-to-noise ratio degradation due to Brownian motion is maximum for low fractional bandwidth, high order and high quality factor RF MEMS tunable filters. Finally, a self-sustained microwave platform to detect the dielectric constant of organic liquids is presented in this dissertation. The main idea is to use a voltage- controlled negative-resistance oscillator whose frequency of oscillation varies according to the organic liquid under test. To make the system self-sustained, the oscillator is embedded in a frequency synthesizer system, which is then digitally interfaced to a computer for calculation of dielectric constant. Such a system has potential uses in a variety of applications in medicine, agriculture and pharmaceuticals.

Development of High Performance 6-18 GHz Tunable/switchable RF MEMS Filters and Their System Implications

Development of High Performance 6-18 GHz Tunable/switchable RF MEMS Filters and Their System Implications PDF Author: Kamran Entesari
Publisher:
ISBN:
Category :
Languages : en
Pages : 358

Book Description


Microstrip Filters for RF / Microwave Applications

Microstrip Filters for RF / Microwave Applications PDF Author: Jia-Sheng Hong
Publisher: John Wiley & Sons
ISBN: 1118002121
Category : Technology & Engineering
Languages : en
Pages : 608

Book Description
The first edition of “Microstrip Filters for RF/Microwave Applications” was published in 2001. Over the years the book has been well received and is used extensively in both academia and industry by microwave researchers and engineers. From its inception as a manuscript the book is almost 8 years old. While the fundamentals of filter circuits have not changed, further innovations in filter realizations and other applications have occurred with changes in the technology and use of new fabrication processes, such as the recent advances in RF MEMS and ferroelectric films for tunable filters; the use of liquid crystal polymer (LCP) substrates for multilayer circuits, as well as the new filters for dual-band, multi-band and ultra wideband (UWB) applications. Although the microstrip filter remains as the main transmission line medium for these new developments, there has been a new trend of using combined planar transmission line structures such as co-planar waveguide (CPW) and slotted ground structures for novel physical implementations beyond the single layer in order to achieve filter miniaturization and better performance. Also, over the years, practitioners have suggested topics that should be added for completeness, or deleted in some cases, as they were not very useful in practice. In view of the above, the authors are proposing a revised version of the “Microstrip Filters for RF/Microwave Applications” text and a slightly changed book title of “Planar Filters for RF/Microwave Applications” to reflect the aforementioned trends in the revised book.

Novel RF Microelectromechanical Systems Tunable Filters with Adjustable Spurious Suppression

Novel RF Microelectromechanical Systems Tunable Filters with Adjustable Spurious Suppression PDF Author: Vikram Sekar
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
This thesis presents the theory and design of fixed and Radio Frequency (RF) Microelectromechanical Systems (MEMS) -based tunable microwave filters for RF and microwave applications. The methodology for the design of coupled resonator filters is explained in detail and is used to design an end-coupled microstrip filter at 1.5 GHz with inductive loading using a stepped microstrip discontinuity to lower the resonance frequency of the half-wavelength microstrip resonator. The fabricated endcoupled filter shows center frequencies of 1.36 GHz and 1.03 GHz in the unloaded and loaded state respectively, with insertion losses between 1.2-1.5 dB and return loss better than 10 dB in both states. The filter response shows spurious passbands at approximately twice the filter center frequencies. To overcome this problem and improve the upper rejection skirt of the filter, microstrip resonators with tapped input/output coupling and mixed inter-resonator coupling are used to suppress the spurious passband by introducing a transmission zero at spurious resonance frequency. Measurement results for the fabricated tapped-resonator filters show an improvement of the upper rejection skirt due to spurious suppression to a level of -40 dB, with insertion loss of 1.2-1.5 dB for the same center frequencies. The concepts developed from fabrication and measurement of fixed-tuned microstrip filters are used to design an inductively-loaded RF MEMS tunable filter with adjustable spurious suppression implemented using packaged metal-contact switches. The two-pole 5% filter has a tuning range of 17% from 1.06 GHz to 1.23 GHz with an insertion loss of 1.56-2.28 dB and return loss better than 13 dB over the tuning range. The inductive loading mechanism is used to tune the open-ended quarter wavelength stub such that a tunable transmission zero supresses the spurious resonance as the filter center frequency is tuned. The spurious passband response in both states is suppressed below -20 dB. The unloaded quality factor (Q) of the filter varies from 127 to 75 as the filter is tuned. The equivalent circuit model for the series metalcontact packaged RF MEMS switch used in the tunable filter is derived from full-wave electromagnetic simulations and used to predict the effect of MEMS switch parasitics on the overall performance of the tunable filter.

Tunable Filters and RF MEMS Variable Capacitors with Closed Loop Control

Tunable Filters and RF MEMS Variable Capacitors with Closed Loop Control PDF Author: Nino Zahirovic
Publisher:
ISBN:
Category :
Languages : en
Pages : 137

Book Description
Multi-band and multi-mode radios are becoming prevalent and necessary in order to provide optimal data rates across a network with a diverse and spotty landscape of coverage areas (3G, HSPA, LTE, etc.). As the number of required bands and modes increases, the aggregate cost of discrete RF signal chains justifies the adoption of tunable solutions. Tunable filters are one of the pieces crucial to signal chain amalgamation. The main requirements for a tunable filter are high unloaded quality factor, wide tuning range, high tuning speed, high linearity, and small size. MEMS technology is the most promising in terms of tuning range, quality factor, linearity and size. In addition, a filter that maintains a constant passband bandwidth as the center frequency is tuned is preferred since the analog baseband processing circuitry tends to be tailored for a particular signal bandwidth. In this work, a novel design technique for tunable fi lters with controlled and predictable bandwidth variation is presented. The design technique is presented alongside an analysis and modeling method for predicting the final filter response during design optimization.

MIT/PCM-based RF Switches for Tunable Filter Application

MIT/PCM-based RF Switches for Tunable Filter Application PDF Author: Junwen Jiang
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
Tunable filters are promising for reducing the size of communication systems by replacing switch filter bank, also they are gaining more attention for satellite applications which will need to change the frequency bands. One of the main requirements for tunable filters is to maintain low passband insertion loss and high stopband rejection over the tuning range. The key to achieving this goal is using high quality factor (high-Q) resonators such as three-dimensional (3D) structure resonators (dielectric resonators, coaxial resonators, waveguide resonators, etc.). For high-Q tunable filters, not only do the resonators need to have high unloaded Q, the tuning elements also need to have low loss. Over the past years, various tuning techniques have been employed to realize tunable filters, including solid-state tuning, mechanical tuning, piezoelectric tuning, magnetic tuning, and MEMS tuning. All of these techniques have both advantages and drawbacks in terms of insertion loss, DC power consumption, tuning speed, non-linearity, and reliability. The objective of the research presented in this thesis is to investigate the feasibility of using metal-insulating transition (MIT) material and phase-change material (PCM) to realize high-Q tunable/ reconfigurable filters for base station in communication and satellite applications. Fabrication methods of MIT material VO2 (Vanadium Dioxide) and PCM GeTe (Germanium Telluride) are first investigated to obtain optimal MIT/PCM materials with high resistivity ratio between different states. RF switches based on both VO2 and GeTe integrated with micro-heaters are then developed. VO2-based variable attenuators are realized at both X-band and Ka-band. A switch capacitor bank is also designed and fabricated, integrating GeTe RF switches and MIM (metal-insulator-metal) capacitors in a six-layer microfabrication process. A novel structure for wideband dielectric substrate-based filters is developed. The cavity of the filter is separated into two thin dielectric substrates (DSs), a metal frame for holding the dielectric substrates, and two metal covers. The filter is compact in size and ideal for integration with antennas because of its relatively thin profile. Since it uses separated DSs attached to the two sides of the metal frame, the input/output probe can be placed at the middle of the cavity, leading to a significant increase in the input/output coupling compared to conventional dielectric resonator filters. Additionally, the filter structure lends itself to realizing relatively large values of inter-resonator coupling. A five-pole Chebyshev filter with a fractional bandwidth of 9.6%, a four-pole filter having two transmission zeros with a fractional bandwidth of 9%, and a three-pole filter with a fractional bandwidth of 13% are designed, fabricated and tested. The filter structure promises to be useful in sub-6 GHz 5G base station applications that require the use of low-cost, miniature, high-Q wideband filters with a thin profile. Furthermore, a novel tuning structure with multiple strip lines is developed in this work. The tuning structure is designed to employ RF switches to tune 3D filters, eliminating the need to use variable capacitor loading, which is known to degrade the filter's loaded Q over the tuning range. Two- and three-pole filters with combline configuration are designed, fabricated and measured with wire bonding, MEMS switches, and VO2 switches. With wire bonding, all of the tuning states demonstrate measured Q higher than 2000, whereas with the fabricated VO2 switches, the measured Q was lower. The test data confirm however the tunability and feasibility of using the proposed tuning scheme to realize a reasonable high-Q tunable filters that maintain Q values over the tuning range. A DS-loaded three-pole tunable filter is designed, fabricated, and measured. The results show the potential of realizing a tunable dielectric filter with a low loss VO2-based switch.

Tunable Substrate Integrated Waveguide Filters Implemented with Pin Diodes and RF MEMS Switches

Tunable Substrate Integrated Waveguide Filters Implemented with Pin Diodes and RF MEMS Switches PDF Author: Marcelino Armendariz
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
This thesis presents the first fully tunable substrate integrated waveguide (SIW) filter implemented with PIN diodes and RF MEMS switches. The methodology for tuning SIW filters is explained in detail and is used to create three separate designs. Each SIW cavity is tuned by perturbing via posts connecting or disconnecting to/from the cavity's top metal layer. In order to separate the biasing network from the SIW filter, a three-layer PCB is fabricated using Rogers RT/duroid substrates. The first tunable design utilizes the Philips BAP55L PIN diode. This two-pole filter provides six frequency states ranging from 1.55 GHz to 2.0 GHz. Fractional bandwidth ranges from 2.3 percent - 3.0 percent with insertion loss and return loss better than 5.4 dB and 14 dB respectively for all frequency tuning states. The second tunable design utilizes the Radant RMSW-100 MEMS switch, providing six states ranging from 1.65 GHz to 2.1 GHz. Fractional bandwidth for this filter varies from 2.5 percent - 3.0 percent with insertion loss and return loss better than 12.4 dB and 16 dB respectively for all states. The third design utilizes the OMRON 2SMES-01 RF MEMS relay, providing fourteen states ranging from 1.19 GHz to 1.58 GHz. Fractional bandwidth ranges from 3.6 percent - 4.4 percent with insertion loss and return loss better than 4.1 dB and 15 dB respectively for all frequency states. Two of the three designs (Philips PIN diode and OMRON MEMS) produced good results validating the new SIW filter tuning methodology. Finally, to illustrate the advantage of microstrip planar structures integrated with SIW structures, low pass filters (LPFs) are implemented along the input and output microstrip-to-SIW transition regions of the tunable SIW filter. With minimal change to the overall filter size, this provides spurious suppression for the additional resonant modes inherently present in waveguide structures. The implemented design utilizes the same OMRON MEMS tunable SIW filter specifications. This two-pole tunable filter provides the same performance as the previous OMRON MEMS design with exception to an added 0.7 dB insertion loss and spurious suppression of -28 dB up to 4.0 GHz for all frequency tuning states.

Low-Loss 4-6 GHz Tunable Filter with 3-Bit High-Q Orthogonal RF-MEMS Capacitance Network

Low-Loss 4-6 GHz Tunable Filter with 3-Bit High-Q Orthogonal RF-MEMS Capacitance Network PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 18

Book Description
A low loss 4-6 GMz 3-bit tunable filter was designed and fabricated on a quarz substrate. A high-Q 3-bit orthogonal RF-MEMS capacitance network is presented and its significance on the filter Q is discussed. Detailed design equations for the capacitively-loaded coupled open-loop, =2 resonators and realization of capacitive external coupling with source-load impedance loading are discussed. The measured filter shows an unloaded-Q of 85-170, an insertion loss of 1.5-2.8 dB (including connector loss), and the measured 1-dB bandwidth is 4.35 +- 0.35% over the 4-6 GMz tuning range. The measured IIP3 and 1-dB power compression point at 5.91 GMz are> 40 dBm and 27.5 dBm, respectively. The unloaded Q and insertion loss can be improved to 125-210 and 1.8-1.1 dB with the use of a thicker bottom electrode. To our knowledge, this is the highest Q tunable planar filter to-date at this frequency range.

Mechanically Tunable RF/Microwave Filters

Mechanically Tunable RF/Microwave Filters PDF Author: Dong Yan
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description