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High-frequency, High-power Resonant Converter with Wide Bandgap Devices for Wireless Power Transfer Systems

High-frequency, High-power Resonant Converter with Wide Bandgap Devices for Wireless Power Transfer Systems PDF Author: Jungwon Choi
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
As demand for electric vehicles (EVs) grows, wireless power transfer (WPT) technology becomes beneficial by removing the need for manual intervention to charge EV batteries. These high-power applications require power electronics systems that not only efficiently deliver sufficient power, but are also small enough to be embedded in the EV. However, while the size of other vehicle components has shrunk considerably over the past decade, that of power electronics systems has not. This presents a major challenge to making power electronics systems for EVs, plasma generation and other high-power industrial applications both efficient and small. This dissertation describes the design and implementation of efficient, compact power electronics systems for charging EVs and other industrial applications, as well as their extensions to WPT. A large part of this work involves overcoming technical limitations by designing high-power (above 2 kW) and high-efficiency (above 90%) systems to operate at tens of MHz switching frequency. First, wide bandgap (WBG) devices such as silicon carbide (SiC) MOSFETs or enhancement mode gallium nitride (eGaN) FETs are used to reduce the size and weight of the entire WPT system and improve system performance. With SiC MOSFETs and eGaN FETs, 2 kW resonant inverters and resonant rectifiers for WPT systems can successfully operate at 13.56 MHz switching frequency. Thus, this work opens up the possibility of achieving kilowatt-level output powers at MHz switching frequencies. After implementing a high-efficiency resonant inverter for the WPT system, the coupling coils must be designed very carefully to deliver power with high efficiency over a mid-range coil distance. Therefore, an open-type four-coil unit is also presented in this work. The advantage of the coils is that the resonant frequency can be changed by adjusting the length of copper wire and distance between two coils. Using this type of coil unit eliminates the need for external capacitors that incur additional losses. However, even when the coupling coils are designed and implemented perfectly to provide high efficiency, the WPT system performance may decrease because of misalignments between the transmitting and receiving coils. Specifically, resonant converters are sensitive to load variation, which increases losses in switching devices. The impedance of magnetic resonant coupling (MRC) coils seen by inverters can be easily changed according to the distance or alignment between transmitting and receiving coils. This is one of the main factors that degrades the overall efficiency of WPT systems. To overcome this issue, this dissertation introduces a new kind of matching network, called an impedance compression network (ICN), to maintain the robustness of coil efficiency in various coil positions. An ICN consisting of a resistance compression network (RCN) and a phase compression network (PCN) was designed and implemented to compensate for distance and alignment variations between coils in a WPT system. Using an ICN helps maintain zero voltage switching (ZVS) and zero dv/dt operation in a resonant inverter and achieve system performance of over 90% efficiency. While WPT systems offer a convenient way to enable high-power applications, a critical unresolved concern is the safety of these systems. This dissertation presents two safety guidelines for EMF exposure and previous studies that evaluate human exposure level compared to the values recommended in the regulations. However, the limits of human exposure to electric, magnetic and electromagnetic fields in high-power WPT systems have not been clearly demonstrated yet. Based on the guidelines and the previous research, future research is required to evaluate EMF exposure in high-frequency, high-power WPT systems. One of the challenges in designing WPT systems for EVs is the need to combine power amplifiers to obtain higher power levels. To address this problem, this dissertation proposes a power-combining resonant inverter that can be applied not only to WPT systems, but also plasma generation and other industrial applications. Current RF power amplifiers for plasma generation operate at very high frequency (VHF), but provide low efficiency around 70% because they use linear amplifier topologies. Using a resonant inverter with WBG devices provides high power while maintaining high efficiency in a 40.68 MHz plasma-generation system. However, WBG devices cannot effectively dissipate heat at frequencies above 40 MHz. To reduce the losses in each eGaN FET, a power-combining inverter based on a class Phi2 inverter is designed and implemented to provide 1.2 kW output power at 40.68 MHz. A configurable method used to tune a class Phi2 inverter allows us to easily connect four of them in parallel to create a power-combining inverter that can achieve up to 1.2 kW output power. Also, the proposed inverter topology reduces the power loss in each switching device, improving the power density of the resonant inverter. In conclusion, this dissertation proposes high-frequency, high-power resonant converters with WBG devices to improve the power density and efficiency of both WPT and plasma generation systems. Furthermore, it presents a novel ICN topology that mitigates misalignment problems caused by MRC coils.

High-frequency, High-power Resonant Converter with Wide Bandgap Devices for Wireless Power Transfer Systems

High-frequency, High-power Resonant Converter with Wide Bandgap Devices for Wireless Power Transfer Systems PDF Author: Jungwon Choi
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
As demand for electric vehicles (EVs) grows, wireless power transfer (WPT) technology becomes beneficial by removing the need for manual intervention to charge EV batteries. These high-power applications require power electronics systems that not only efficiently deliver sufficient power, but are also small enough to be embedded in the EV. However, while the size of other vehicle components has shrunk considerably over the past decade, that of power electronics systems has not. This presents a major challenge to making power electronics systems for EVs, plasma generation and other high-power industrial applications both efficient and small. This dissertation describes the design and implementation of efficient, compact power electronics systems for charging EVs and other industrial applications, as well as their extensions to WPT. A large part of this work involves overcoming technical limitations by designing high-power (above 2 kW) and high-efficiency (above 90%) systems to operate at tens of MHz switching frequency. First, wide bandgap (WBG) devices such as silicon carbide (SiC) MOSFETs or enhancement mode gallium nitride (eGaN) FETs are used to reduce the size and weight of the entire WPT system and improve system performance. With SiC MOSFETs and eGaN FETs, 2 kW resonant inverters and resonant rectifiers for WPT systems can successfully operate at 13.56 MHz switching frequency. Thus, this work opens up the possibility of achieving kilowatt-level output powers at MHz switching frequencies. After implementing a high-efficiency resonant inverter for the WPT system, the coupling coils must be designed very carefully to deliver power with high efficiency over a mid-range coil distance. Therefore, an open-type four-coil unit is also presented in this work. The advantage of the coils is that the resonant frequency can be changed by adjusting the length of copper wire and distance between two coils. Using this type of coil unit eliminates the need for external capacitors that incur additional losses. However, even when the coupling coils are designed and implemented perfectly to provide high efficiency, the WPT system performance may decrease because of misalignments between the transmitting and receiving coils. Specifically, resonant converters are sensitive to load variation, which increases losses in switching devices. The impedance of magnetic resonant coupling (MRC) coils seen by inverters can be easily changed according to the distance or alignment between transmitting and receiving coils. This is one of the main factors that degrades the overall efficiency of WPT systems. To overcome this issue, this dissertation introduces a new kind of matching network, called an impedance compression network (ICN), to maintain the robustness of coil efficiency in various coil positions. An ICN consisting of a resistance compression network (RCN) and a phase compression network (PCN) was designed and implemented to compensate for distance and alignment variations between coils in a WPT system. Using an ICN helps maintain zero voltage switching (ZVS) and zero dv/dt operation in a resonant inverter and achieve system performance of over 90% efficiency. While WPT systems offer a convenient way to enable high-power applications, a critical unresolved concern is the safety of these systems. This dissertation presents two safety guidelines for EMF exposure and previous studies that evaluate human exposure level compared to the values recommended in the regulations. However, the limits of human exposure to electric, magnetic and electromagnetic fields in high-power WPT systems have not been clearly demonstrated yet. Based on the guidelines and the previous research, future research is required to evaluate EMF exposure in high-frequency, high-power WPT systems. One of the challenges in designing WPT systems for EVs is the need to combine power amplifiers to obtain higher power levels. To address this problem, this dissertation proposes a power-combining resonant inverter that can be applied not only to WPT systems, but also plasma generation and other industrial applications. Current RF power amplifiers for plasma generation operate at very high frequency (VHF), but provide low efficiency around 70% because they use linear amplifier topologies. Using a resonant inverter with WBG devices provides high power while maintaining high efficiency in a 40.68 MHz plasma-generation system. However, WBG devices cannot effectively dissipate heat at frequencies above 40 MHz. To reduce the losses in each eGaN FET, a power-combining inverter based on a class Phi2 inverter is designed and implemented to provide 1.2 kW output power at 40.68 MHz. A configurable method used to tune a class Phi2 inverter allows us to easily connect four of them in parallel to create a power-combining inverter that can achieve up to 1.2 kW output power. Also, the proposed inverter topology reduces the power loss in each switching device, improving the power density of the resonant inverter. In conclusion, this dissertation proposes high-frequency, high-power resonant converters with WBG devices to improve the power density and efficiency of both WPT and plasma generation systems. Furthermore, it presents a novel ICN topology that mitigates misalignment problems caused by MRC coils.

High Frequency High Boost Ratio Dc-dc Converters with Wide Bandgap Devices for PV System Applications

High Frequency High Boost Ratio Dc-dc Converters with Wide Bandgap Devices for PV System Applications PDF Author: Cong Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 164

Book Description
Chapter 4 focuses on solving common problems of high boost ratio resonant converters, such as large power requirements on the passive components, and high circulating current at light load conditions. Adaptive inductor is discussed as a possible way to decrease the system size and increase system efficiency. Chapter 5 proposes a family of switched capacitor-inductor (C-L) circuits which is largely based on parallel charging serial discharging technique. A comparison of the two solutions proposed in Chapter 4 and 5 shows that the solution in Chapter 5 is more feasible with available materials and existing technologies. Therefore, a 1.2 kW lab prototype, with an input voltage ranges between 20 V and 40 V and a constant output voltage at 1000 V was built and tested. During the tests, the switching frequency was set at 187.5 kHz. Experimental results have validated the proposed circuit topology and demonstrated a 96.1% peak efficiency and an overall efficiency over 94.5%.

Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices PDF Author: B. Jayant Baliga
Publisher: Woodhead Publishing
ISBN: 0081023073
Category : Technology & Engineering
Languages : en
Pages : 420

Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Key Technologies of Magnetically-Coupled Resonant Wireless Power Transfer

Key Technologies of Magnetically-Coupled Resonant Wireless Power Transfer PDF Author: Yiming Zhang
Publisher: Springer
ISBN: 9811065381
Category : Technology & Engineering
Languages : en
Pages : 130

Book Description
This thesis focuses on the key technologies involved in magnetically coupled Wireless Power Transfer (WPT). Starting from the basic structures and theories of WPT, it addresses four fundamental aspects of these systems. Firstly, it analyzes the factors affecting transfer efficiency and compares various methods for reducing the working frequency. Secondly, it discusses frequency splitting and offers a physical explanation. Thirdly, it proposes and assesses three multiple-load transfer structures. Lastly, it investigates WPT systems with active voltage-source and current-source load. As such, the thesis offers readers a deeper understanding of WPT technology, while also proposing insightful new advances.

Design of MHz Power Amplifiers Using Wide Bandgap Devices

Design of MHz Power Amplifiers Using Wide Bandgap Devices PDF Author: Jia Le Xu
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
Power amplifiers are essential building blocks in many applications, including radio transmission, wireless power transfer, medical devices, and plasma generation. Conventional linear power amplifiers, such as Class A, Class AB, Class B, and Class C, have good linearity but low efficiencies. Switched-mode power amplifiers, such as Class D, Class E, and Class F2, can achieve a theoretical efficiency of 100%. However, these power amplifiers are designed to operate only at a fixed operating point, and changes in frequency or loading conditions can result in a significant degradation of their efficiencies and output power. Wireless power transfer systems and plasma generators are among the increasing number of applications that use high-frequency power converters. Increasing switching frequency can reduce the energy storage requirements of the passive elements that can lead to higher power densities or even the elimination of magnetic cores. However, operating at higher frequencies requires faster switching devices in packages with low-parasitics. Wide bandgap (WBG) power devices like gallium nitride (GaN) and silicon carbide (SiC) devices, have high critical fields and high thermal conductivity that make them good candidates for efficient high-voltage and high-frequency operations. Commercially available GaN and SiC devices have ratings targeting different applications. Lateral GaN devices dominate in lower-voltage (

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion PDF Author: Gaudenzio Meneghesso
Publisher: Springer
ISBN: 331977994X
Category : Technology & Engineering
Languages : en
Pages : 242

Book Description
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Advances in High-Efficiency LLC Resonant Converters

Advances in High-Efficiency LLC Resonant Converters PDF Author:
Publisher:
ISBN: 9783039283866
Category : Technology & Engineering
Languages : en
Pages : 170

Book Description


GaN Transistors for Efficient Power Conversion

GaN Transistors for Efficient Power Conversion PDF Author: Alex Lidow
Publisher: John Wiley & Sons
ISBN: 1119594375
Category : Science
Languages : en
Pages : 384

Book Description
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Wide Bandgap Semiconductors for Power Electronics

Wide Bandgap Semiconductors for Power Electronics PDF Author: Peter Wellmann
Publisher: John Wiley & Sons
ISBN: 3527346716
Category : Technology & Engineering
Languages : en
Pages : 743

Book Description
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.

Holistic Design of Resonant DC Transformer on Constant Voltage Conversion, Cascaded Stability and High Efficiency

Holistic Design of Resonant DC Transformer on Constant Voltage Conversion, Cascaded Stability and High Efficiency PDF Author: Xin Zhang
Publisher: Springer Nature
ISBN: 9811991154
Category : Technology & Engineering
Languages : en
Pages : 247

Book Description
This book is devoted to the optimum design of the DCT in a hybrid AC/DC microgrid, which takes into account not only the influence of different inductors/capacitors values, but also numerous design goals (i.e., VCG, efficiency, stability and so on). This book examines the DCT's design problem in detail. It begins by reviewing existing DCTs in, the hybrid AC/DC microgrid and their design problems. Following that, this book proposes a family of DCT optimization design approaches to ensure that the designed DCT has good power transmission and voltage regulation ability in the hybrid AC/DC microgrid, even when the actual inductors/capacitors values fluctuate with practical power and temperature. Following that, this book provides a family of multi-objective optimization design methodologies for the DCT to guarantee that it concurrently achieves the requirements of VCG, efficiency, and system stability. This book also covers how to control the DCT in a hybrid AC/DC microgrid optimally and generically.