High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors PDF Download

Author: B. Gunnar Malm
Publisher:
ISBN:
Category :
Languages : en
Pages : 60

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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 29

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Book Description
The high power operation of the heterojunction bipolar transistor (HBT) has been analyzed by experimentally determining the junction temperature and separating temperature effects from other high power effects. In addition, an HBT large signal model has been developed that is valid for the linear, saturation, and cutoff regions, with low frequency temperature effects included. This model has been implemented in a commercial harmonic balance simulator, LIBRA from EEsof, making it particularly suitable for the design and simulation of HBT microwave power integrated circuits. In addition, an analysis of the most temperature-sensitive microwave elements for the HBT has been performed using measured s-parameter data at five elevated temperatures from 23 deg. C to 226 deg. C. The element values were compared to a physical model showing excellent agreement in magnitude and direction of change with temperature and bias. The transistor cutoff frequencies were also measured and calculated, showing a monotonic decrease with temperature of approximately 50% over the 200 deg. C range. Heterojunction Bipolar Transistor, Large Signal Modeling, Thermal Effects.

Author: Peter Ashburn
Publisher: John Wiley & Sons
ISBN: 0470090731
Category : Technology & Engineering
Languages : en
Pages : 286

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Book Description
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

Author: Jianjun Gao
Publisher: John Wiley & Sons
ISBN: 1118921542
Category : Technology & Engineering
Languages : en
Pages : 280

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Book Description
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

Author: Douglas Andrew Teeter
Publisher:
ISBN:
Category :
Languages : en
Pages : 546

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Author: Bishwadeep Saha
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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This thesis presents a study concerning the characterization of high frequency effectsin bipolar heterojunction transistors (HBT) in SiGe. During this work, the transistor of the BiCMOSB55 process (55nm) from STMicroelectronics was mainly analyzed. This state-of-the-arttechnology is characterized by a transition frequency of 320 GHz and a maximum oscillationfrequency (fMAX) of 370 GHz. The work is divided into three sub-themes, the objectives ofwhich are better characterization and better modeling of these components. The first part concernsthe extraction of fMAX from miniaturized transistors. Indeed, this fMAX frequency is afigure of merit of the first importance which is used to promote a technology. Unfortunately, it isobserved that the methodology used to extract fMAX by directly using Mason's gain formula onthe measured data gives very uncertain results on very advanced components. This complicatesthe analysis of transistor manufacturing batches. It has been shown that a simple small signalmodel extracted from the Y parameters removes the extraction uncertainties and allows the fineevaluation of a technology. The second part concerns the substrate of the transistor. In fact, thiszone of the transistor is the most important in terms of geometry, leading to distributed effects,the contribution of which is greater at high frequency. This therefore plays an essential role inthe modeling of the characteristics of the high frequency S parameters of modern HBT SiGe. Inthis work, we therefore extended and validated the transistor substrate model and we comparedthe SPICE-type simulations and measurements up to frequencies above 300 GHz. Finally, in athird part, we have oriented our modeling work towards the base, collector and emitter accessesas well as on the intrinsic transistor. Indeed, at very high frequency, that is to say above 100GHz for this technology, the transistor accesses must be modeled by distributed elements. Theintrinsic transistor is itself subject to so-called non-quasi-static effects. Sensitivity studies ofthe high frequency parameters of the HICUM model were carried out to establish a parameterextraction strategy. The high-frequency parameters are extracted with the support of the TCADsimulation and compared with S parameters measurements up to 500 GHz.

Author: Michael Reisch
Publisher: Springer Science & Business Media
ISBN: 364255900X
Category : Technology & Engineering
Languages : en
Pages : 671

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This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.

Author: Peng Cheng
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages :

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The importance of high frequency noise performance is increasing in advanced bipolar and complementary metal-oxide semiconductor (BiCMOS) technologies because of the high demands of radio frequency (RF) and mixed-signal integrated circuits used in the 5G communication, automatic-driving sensors and internet of things (IOT) applications. While the characterization and modeling of high frequency noise of BiCMOS transistors have been a topic for many years, some important issues have not been clarified. For example, the noise correlation is not well predicted for bipolar devices, the excess noise factor is not well understood for MOSFET devices and the temperature dependence of high frequency noise in BiCMOS devices is not well studied. Focused on these issues, this research establishes the approach to extract the noise transit time from the high current compact model (HICUM), demonstrates an efficient methodology for high frequency noise prediction for silicon-germanium heterojunction bipolar transistors (SiGe HBTs) and validates the prediction methodology over size, bias and temperature. One of the issues of high frequency noise modeling of bipolar transistors is the noise correlation effect. This research explores the physical origin of high frequency noise correlation, studies the noise model of SiGe HBTs and creates an approach to extract the noise transit time from the HICUM compact model. The extracted noise transit time is validated by the tuner-based noise measurement results of sample SiGe HBTs by comparing the four noise parameters between the calculated and measured data over transistor size, bias and temperature. The results show that the noise transit time can be independent of frequency but dependent on bias and temperature. Furthermore, a complete high frequency noise prediction system is established. Based on the extraction methodology of the noise transit time from the HICUM model, this dissertation demonstrates a low-cost and time-friendly methodology to predict the full high frequency noise properties of the bipolar devices directly from the S-parameter measurement, DC measurement and the parameters from the HICUM model without the tuner-based noise measurement. Compared with the conventional tuner-based noise measurement, this methodology can save the measurement time as well as achieve a good accuracy. For MOSFET devices, the importance of excess noise factor is increasing with the transistor size scaling down to sub-100nm for high frequency noise modeling, but it has not been well studied so far. This research analyzes the excess noise factor based on the device physics and characterization results, investigates the noise sources contribution and models the high frequency noise based on Y-parameter methodology.

Author: Shiming Zhang
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 214

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Author: Beth Olivia Woods
Publisher:
ISBN: 9781303059681
Category : Geraniums
Languages : en
Pages : 750

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Book Description
The silicon germanium heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. Applications at low temperatures with expansive temperature range specifications need an HBT compact model to accurately represent the device's performance. In this work, a compact model referenced at 300K was developed to accurately represent both DC and AC electrical performance of the SiGe HBT over an extended temperature range, down to 93K. This single expansive temperature, SET, model supports all functions of circuit simulation; DC quiescent operation and AC frequency response. The SET model was developed from the Mextram 504.7 bipolar model and accurately represents full transistor operation over an extreme temperature environment. The model correctly simulates SiGe HBT DC output performance from saturation, through quasi-saturation and the linear region including impact ionization effects. This model was developed through a combination of physical calculations based on doping profiles and optimization techniques for modeling fitting. The SET model of this dissertation added 32 parameters to the original Mextram 504.7 model's 78 parameters. The device's static and dynamic performance over the full temperature range down to 93K was fitted with a single group of SET model parameters. The model results show excellent correlation with measured data over the entire temperature range.