Author: Jayadev VellankiPublisher:
ISBN:
Category :
Languages : en
Pages : 208
Book Description
High-energy Ion-implantation Into InP and GaAs for Microwave Device Applications
Author: Jayadev VellankiIon Beams in Materials Processing and Analysis
Author: Bernd SchmidtPublisher: Springer Science & Business Media
ISBN: 3211993568
Category : Technology & Engineering
Languages : en
Pages : 425
Book Description
A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
Scientific and Technical Aerospace Reports
Author: InP-Based Materials and Devices
Author: Osamu WadaPublisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 616
Book Description
A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
EDMO ...
Author: Ion Implantation: Basics to Device Fabrication
Author: Emanuele RiminiPublisher: Springer Science & Business Media
ISBN: 9780792395201
Category : Technology & Engineering
Languages : en
Pages : 418
Book Description
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
RFIC and MMIC Design and Technology
Author: I.D. RobertsonPublisher: IET
ISBN: 0852967861
Category : Technology & Engineering
Languages : en
Pages : 583
Book Description
This book gives an in-depth account of GaAs, InP and SiGe, technologies and describes all the key techniques for the design of amplifiers, ranging from filters and data converters to image oscillators, mixers, switches, variable attenuators, phase shifters, integrated antennas and complete monolithic transceivers.
Review
Author: 1976 Review
Author: Naval Research Laboratory (U.S.)Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 212
Book Description
Author: