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Languages : en
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Author: Paolo Colantonio
Publisher: John Wiley & Sons
ISBN: 9780470746554
Category : Technology & Engineering
Languages : en
Pages : 514

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Book Description
Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.

Author:
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Category :
Languages : en
Pages : 5

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Book Description
Two high efficiency Ku-band pHEMT power amplifier MMICs are presented in this paper. A single, stage, high efficiency amplifier provides a peak power added efficiency of 57.6% with 10.5 dB associated gain and 26.5 dBm output power into a 50 Ohms load at 14 GHz. Additionally, a dual stage, high gain amplifier provides a peak power added efficiency of 50.4% with 19.7 dB associated gain and 27.5 dBm output power into a 50 Ohms load at 14.3 GHz. State-of-the-art efficiency performance at these frequencies is achieved through Class-F transistor operation. Process selection, circuit design, and measured results are described.

Author:
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Category :
Languages : en
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Book Description
A three stages GaAs MMIC power amplifier in MESFET Technology for point to point radio application that delivers an output power greater than 125 mW, with associated gain higher than 19 dB has been developed. The use of bias feed bonding wires as tuning element has been exploited to shorten the design cycle time and to optimize the circuit performance in the desired frequency bandwidth. The device has a power added efficiency greater than 15% at 1 dB of compression in the frequency bandwidth from 21.2 to 23.6 GHz. A pilot test for production has demonstrated the repetitivity of the good performance and the device has been accepted for large volume production after the first design cycle.

Author: Andrei Grebennikov
Publisher: Academic Press
ISBN: 0128227540
Category : Technology & Engineering
Languages : en
Pages : 840

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Book Description
Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretical discussions with practical examples, allowing readers to design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors, design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies with specified output power, also providing techniques on how to design multiband and broadband Doherty amplifiers using different bandwidth extension techniques and implementation technologies. This book provides the necessary information to understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements. It brings a unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems which offer major power consumption savings. Provides a complete history of high-efficiency Class E and Class F techniques Presents a new chapter on Class E with shunt capacitance and shunt filter to simplify the design of high-efficiency power amplifier with broader frequency bandwidths Covers different Doherty architectures, including integrated and monolithic implementations, which are and will be, used in modern communication systems to save power consumption and to reduce size and costs Includes extended coverage of multiband and broadband Doherty amplifiers with different frequency ranges and output powers using different bandwidth extension techniques Balances theory with practical implementation, avoiding a cookbook approach and enabling engineers to develop better designs, including hybrid, integrated and monolithic implementations

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 72

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Book Description

Author: Michel Ann Reece
Publisher:
ISBN:
Category : Amplifiers, Radio frequency
Languages : en
Pages : 334

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Book Description
Highly efficient, compact solid-state power amplifier (SSPA) MMICs are required for today's expanding satellite communication applications at Ka-band frequencies. The need for higher data rates, reduced cost, and submicron sizes makes SSPA technologies at Ka-band very attractive. A technique that can be employed to realize high efficiency operation of power amplifiers at microwave frequencies is to employ a Class F amplifier configuration. In order to obtain Class F performance, the output circuit is tuned to pass the fundamental, short (suppress) the second (even) harmonics, and provide an open to the third (odd) harmonics. Thus, providing theoretically an efficiency of 100%. However, at microwave frequencies, transistors are far from ideal. Accurate models are needed to predict the transistor's exotic performance in a circuit. Artificial neural network (ANN) models are a choice alternative for MMIC circuit designers to implement. ANNs have the capability to learn generalize patterns in data and model high linearities. Recently, research has been done that has proved that Knowledge-based Neural Networks (KBNN) are capable of modeling a transistor's small-signal and large-signal characteristics and are quite attractive for implementation in CAD packages. This research employs the use of Class F matching techniques in several prototype single-stage amplifier designs in order to achieve improved efficiency performance at Ka-band frequencies. In addition, Class F MMIC amplifier designs at C-band are also discussed to verify the feasibility of approach. Advanced knowledge-based neural network modeling techniques are implemented for a 300um device in a .25um GaAs PHEMT technology. A KBNN model extraction methodology is derived and integration into a commercial computer-aided (CAD) tool is discussed. A design methodology is developed and utilized to achieve record measured performance of 62% Power-Added-Efficiency at 31 GHz with a gain of 8.7dB and an output power of 18.3dBm. A secondary purpose of this research discusses the impact of the implementation of knowledge-based neural network modeling technique to the design process. -- Abstract.

Author: Raed Abd-Alhameed
Publisher: European Alliance for Innovation
ISBN: 163190261X
Category : Education
Languages : en
Pages : 1619

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Book Description
IMDC-SDSP conference offers an exceptional platform and opportunity for practitioners, industry experts, technocrats, academics, information scientists, innovators, postgraduate students, and research scholars to share their experiences for the advancement of knowledge and obtain critical feedback on their work. The timing of this conference coincides with the rise of Big Data, Artificial Intelligence powered applications, Cognitive Communications, Green Energy, Adaptive Control and Mobile Robotics towards maintaining the Sustainable Development and Smart Planning and management of the future technologies. It is aimed at the knowledge generated from the integration of the different data sources related to a number of active real-time applications in supporting the smart planning and enhance and sustain a healthy environment. The conference also covers the rise of the digital health, well-being, home care, and patient-centred era for the benefit of patients and healthcare providers; in addition to how supporting the development of a platform of smart Dynamic Health Systems and self-management.

Author: Karun Rawat
Publisher: Springer Nature
ISBN: 3030388662
Category : Technology & Engineering
Languages : en
Pages : 390

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Book Description
This book focuses on broadband power amplifier design for wireless communication. Nonlinear model embedding is described as a powerful tool for designing broadband continuous Class-J and continuous class F power amplifiers. The authors also discuss various techniques for extending bandwidth of load modulation based power amplifiers, such as Doherty power amplifier and Chireix outphasing amplifiers. The book also covers recent trends on digital as well as analog techniques to enhance bandwidth and linearity in wireless transmitters. Presents latest trends in designing broadband power amplifiers; Covers latest techniques for using nonlinear model embedding in designing power amplifiers based on waveform engineering; Describes the latest techniques for extending bandwidth of load modulation based power amplifiers such as Doherty power amplifier and Chireix outphasing amplifiers; Includes coverage of hybrid analog/digital predistortion as wideband solution for wireless transmitters; Discusses recent trends on on-chip power amplifier design with GaN /GaAs MMICs for high frequency applications.

Author: Randy-Alexander Randolph Besprozvanny
Publisher:
ISBN: 9781124716763
Category :
Languages : en
Pages : 73

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Book Description
Achieving high efficiency power amplification over multi-octave RF bandwidths pose many design challenges. Conventional design techniques do not support high efficiency operation since use of distributed matching circuits and/or multiplexing several power amplifiers incur non-optimal matching environments or high output losses. A new design approach is discussed whereby using the latest Gallium Nitride transistor technology and leveraging a Class E circuit environment, multiple electronically switched output networks are provided to the RF transistor providing high efficiency operation over multi-octave RF bandwidths. Two electronic switching elements are considered including PIN diodes and RF transistors. Using commercially available components, measurements are conducted on a physical prototype using PIN diode switch elements demonstrating typical efficiencies of 50% over two octaves bandwidth and at frequencies up to 2.4GHz.