Author: Michael CasePublisher:
ISBN:
Category : Amplifiers (Electronics)
Languages : en
Pages : 6
Book Description
High Efficiency, High Gain K- and Ku-band InP-based HEMT MMIC Amplifiers for Array Applications
Author: Michael CasePublisher:
ISBN:
Category : Amplifiers (Electronics)
Languages : en
Pages : 6
Book Description
1994 IEEE MTT-S European Topical Congress on Technologies for Wireless Applications
Author: IEEE Microwave Theory and Techniques SocietyPublisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 180
Book Description
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
Author: Jutta KühnPublisher: KIT Scientific Publishing
ISBN: 3866446152
Category : Power amplifiers
Languages : en
Pages : 264
Book Description
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
Ku-band High Efficiency GaAs MMIC Power Amplifiers
Author: Bandwidth and Efficiency Enhancement in Radio Frequency Power Amplifiers for Wireless Transmitters
Author: Karun RawatPublisher: Springer Nature
ISBN: 3030388662
Category : Technology & Engineering
Languages : en
Pages : 390
Book Description
This book focuses on broadband power amplifier design for wireless communication. Nonlinear model embedding is described as a powerful tool for designing broadband continuous Class-J and continuous class F power amplifiers. The authors also discuss various techniques for extending bandwidth of load modulation based power amplifiers, such as Doherty power amplifier and Chireix outphasing amplifiers. The book also covers recent trends on digital as well as analog techniques to enhance bandwidth and linearity in wireless transmitters. Presents latest trends in designing broadband power amplifiers; Covers latest techniques for using nonlinear model embedding in designing power amplifiers based on waveform engineering; Describes the latest techniques for extending bandwidth of load modulation based power amplifiers such as Doherty power amplifier and Chireix outphasing amplifiers; Includes coverage of hybrid analog/digital predistortion as wideband solution for wireless transmitters; Discusses recent trends on on-chip power amplifier design with GaN /GaAs MMICs for high frequency applications.
MMIC Power Amplifiers in GaN HEMT and InP HBT Technologies
Author: Vamsi K. PaidiPublisher:
ISBN: 9780496017072
Category :
Languages : en
Pages : 394
Book Description
The second phase of research involved developing 75--220-GHz power amplifiers which have applications in wide-band communication systems, atmospheric sensing and automotive radar. Modern InP double heterojunction bipolar transistors (DHBTs) simultaneously exhibit 6 V Vbr, 400 GHz fmax, 3.5 mA/mum2 collector current density and high thermal conductivity, resulting in high power density in the 75--220-GHz frequency band. The common-base topology exhibits higher maximum stable gain in this band when compared to common-emitter and common-collector topologies. Layout parasitics including base inductance, Lb and collector to emitter overlap capacitance, Cce can cause instability. A single-sided collector contact has been employed to reduce Cce. A single-stage common-base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.77 dBm output power with 5-dB associated power gain at 172 GHz. A two-stage common-base amplifier exhibited 8.1 dBm output power with 6.35-dB associated power gain at 176 GHz and demonstrated 9.13 dBm of saturated output power. This two-stage common-base amplifier exhibited 10.3 dBm output power at 150.2 GHz.
Electrical & Electronics Abstracts
Author: Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
Book Description
High Efficiency Class-F MMIC Power Amplifiers at Ku-Band
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 5
Book Description
Two high efficiency Ku-band pHEMT power amplifier MMICs are presented in this paper. A single, stage, high efficiency amplifier provides a peak power added efficiency of 57.6% with 10.5 dB associated gain and 26.5 dBm output power into a 50 Ohms load at 14 GHz. Additionally, a dual stage, high gain amplifier provides a peak power added efficiency of 50.4% with 19.7 dB associated gain and 27.5 dBm output power into a 50 Ohms load at 14.3 GHz. State-of-the-art efficiency performance at these frequencies is achieved through Class-F transistor operation. Process selection, circuit design, and measured results are described.
Author: 
Author: