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Heterostructures and Quantum Devices

Heterostructures and Quantum Devices PDF Author: Norman G. Einspruch
Publisher: Elsevier
ISBN: 1483295176
Category : Technology & Engineering
Languages : en
Pages : 465

Book Description
Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development.

Heterostructures and Quantum Devices

Heterostructures and Quantum Devices PDF Author: Norman G. Einspruch
Publisher: Elsevier
ISBN: 1483295176
Category : Technology & Engineering
Languages : en
Pages : 465

Book Description
Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development.

Quantum Heterostructures

Quantum Heterostructures PDF Author: Vladimir Vasilʹevich Mitin
Publisher: Cambridge University Press
ISBN: 9780521636353
Category : Science
Languages : en
Pages : 670

Book Description
Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.

VLSI Electronics

VLSI Electronics PDF Author: Norman G. Einspruch
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 472

Book Description


Quantum Devices in SI/SiGe Heterostructures

Quantum Devices in SI/SiGe Heterostructures PDF Author: Keith A. Slinker
Publisher:
ISBN:
Category :
Languages : en
Pages : 142

Book Description


Quantum Dot Heterostructures

Quantum Dot Heterostructures PDF Author: Dieter Bimberg
Publisher: John Wiley & Sons
ISBN: 9780471973881
Category : Science
Languages : en
Pages : 350

Book Description
Da die Nachfrage nach immer schnelleren und kleineren Halbleiterbauelementen stetig wächst, sind Quanten-Dots und -Pyramiden rasant in den Mittelpunkt der Halbleiterforschung gerückt. Dieses Buch vermittelt einen umfassenden Überblick über den aktuellen Forschungsstand auf diesem Gebiet. Behandelt werden u.a. Fragen, wie Strukturen aufgebaut, wie sie charakterisiert werden und wie sie die Leistungsfähigkeit der Bauelemente bestimmen. (11/98)

Physics of Quantum Electron Devices

Physics of Quantum Electron Devices PDF Author: Federico Capasso
Publisher: Springer Science & Business Media
ISBN: 3642747515
Category : Technology & Engineering
Languages : en
Pages : 416

Book Description
The ability to engineer the bandstructure and the wavefunction over length scales previously inaccessible to technology using artificially structured materials and nanolithography has led to a new class of electron semiconductor devices whose operation is controlled by quantum effects. These structures not only represent exciting tools for investigating new quantum phenomena in semiconductors, but also offer exciting opportunities for applications. This book gives the first comprehensive treatment of the physics of quantum electron devices. This interdisciplinary field, at the junction between material science, physics and technology, has witnessed an explosive growth in recent years. This volume presents a detailed coverage of the physics of the underlying phenomena, and their device and circuit applications, together with fabrication and growth technology.

Advanced Semiconductor Heterostructures

Advanced Semiconductor Heterostructures PDF Author: Mitra Dutta
Publisher: World Scientific
ISBN: 9789812775542
Category : Science
Languages : en
Pages : 256

Book Description
Novel heterostructure devices. Electron-phonon interactions in intersubband laser heterostructures / M.V. Kisin, M. Dutta, and M.A. Stroscio -- Quantum dot infrared detectors and sources / P. Bhattacharya ... [et al.] -- Generation of terahertz emission based on intersubband transitions / Q. Hu -- Mid-infrared GaSb-based lasers with Type-I heterointerfaces / D.V. Donetsky, R.U. Martinelli, and G.L. Belenky -- Advances in quantum-dot research and technology: the path to applications in biology / M.A. Stroscio and M. Dutta -- Potential device applications and basic properties. High-field electron transport controlled by optical phonon emission in nitrides / S.M. Komirenko ... [et al.] -- Cooling by inverse Nottingham effect with resonant tunneling / Y. Yu, R.F. Greene, and R. Tsu -- The physics of single electron transistors / M.A. Kastner -- Carrier capture and transport within tunnel injection lasers: a quantum transport analysis / L.F. Register ... [et al.] -- The influence of environmental effects on the acoustic phonon spectra in quantum-dot heterostructures / S. Rufo, M. Dutta, and M.A. Stroscio -- Quantum devices with multipole-electrode - heterojunctions hybrid structures / R. Tsu.

Silicon Quantum Integrated Circuits

Silicon Quantum Integrated Circuits PDF Author: E. Kasper
Publisher: Springer Science & Business Media
ISBN: 3540263829
Category : Technology & Engineering
Languages : en
Pages : 367

Book Description
Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

Physics of Quantum Well Devices

Physics of Quantum Well Devices PDF Author: B.R. Nag
Publisher: Springer Science & Business Media
ISBN: 0306471272
Category : Science
Languages : en
Pages : 309

Book Description
Quantum well devices have been the objects of intensive research during the last two decades. Some of the devices have matured into commercially useful products and form part of modern electronic circuits. Some others require further dev- opment, but have the promise of being useful commercially in the near future. Study of the devices is, therefore, gradually becoming compulsory for electronics specialists. The functioning of the devices, however, involve aspects of physics which are not dealt with in the available text books on the physics of semicond- tor devices. There is, therefore, a need for a book to cover all these aspects at an introductory level. The present book has been written with the aim of meeting this need. In fact, the book grew out of introductory lectures given by the author to graduate students and researchers interested in this rapidly developing area of electron devices. The book covers the subjects of heterostructure growth techniques, band-offset theory and experiments, electron states, electron-photon interaction and related phenomena, electron transport and the operation of electronic, opto-electronic and photonic quantum well devices. The theory as well as the practical aspects of the devices are discussed at length. The aim of the book is to provide a comprehensive treatment of the physics underlying the various devices. A reader after going through the book should find himself equipped to deal with all kinds of quantum well devices.

Investigation of Lateral Gated Quantum Devices in Si/SiGe Heterostructures

Investigation of Lateral Gated Quantum Devices in Si/SiGe Heterostructures PDF Author: Andrew Pan Lai
Publisher:
ISBN:
Category :
Languages : en
Pages : 75

Book Description
Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Because of this, they are excellent candidates for use as solid state qubits. The initial approach towards creating controllable Si/SiGe quantum dots was to fabricate them in delta doped heterostructures. We provide evidence that the delta doping layer in these heterostructures provides a parallel conduction path, which prevents one from creating controllable quantum dots. Instead, it may be more favorable to supply electrons in the 2DEG through capactive gating, instead of a delta doping layer. We therefore discuss efforts to fabricate Si/SiGe quantum dots from undoped heterostructures and the difficulties encountered. A new method for fabricating ohmics in undoped heterostructures is discussed. We also discuss parallel conduction which occurs in the Si cap layer of these undoped heterostructures, which appears to be a major obstacle towards achieving workable devices in undoped Si/SiGe heterostructures.