Heteroepitaxy of CMR Manganites Thin Films of Silicon PDF Download

Author: Sanjay Adhikari
Publisher:
ISBN:
Category : Thins films
Languages : en
Pages : 64

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Author: Tapan Chatterji
Publisher: Springer Science & Business Media
ISBN: 9401512442
Category : Science
Languages : en
Pages : 455

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Book Description
The physics of transition metal oxides has become a central topic of interest to condensed-matter scientists ever since high temperature superconductivity was discovered in hole-doped cuprates with perovskite-like structures. Although the renewed interest in hole-doped perovskite manganites following the discovery of their colossal magnetoresistance (CMR) properties, began in 1993 about a decade after the discovery of high temperature superconductivity, their first investigation started as early as 1950 and basic theoretical ideas were developed during 1951-1960. Experience in sample preparation and characterization, and in growth of single crystals and epitaxial thin films, gained during the research on high temperature superconductors, and the development of theoretical tools, were very efficiently used in research on CMR manganites. In early nineties it appeared to many condensed matter physicists that although the problem of high temperature superconductivity is a difficult one to solve, a quantitative understanding of CMR phenomena might be well within reach. This book is intended to be an account of the latest developments in the phys ics of CMR manganites. When I planned this book back in 2000, I thought that research on the physics of CMR manganites would be more or less consolidated by the time this would be published. I was obviously very optimistic indeed. We are now in 2003 and we still do not have a quantitative understanding of the central CMR effect. Meanwhile the field has expanded. It is still a very active field of research on both the experimental and theoretical fronts.

Author: Zhigao Sheng
Publisher: Nova Science Publishers
ISBN: 9781634824521
Category : Condensed matter
Languages : en
Pages : 0

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Book Description
Mixed-valence manganites have attracted considerable attention since the late 19th century. The intriguing interplay of charge, spin and orbital ordering in the manganites systems superimposed by interface/surface effects provides a scientific platform beneficial for both fundamental and application-oriented research. The fundamental basis for understanding physical properties and designing new functionalities of manganites is the concept of the symmetry of order parameters which can be manipulated artificially by controlling the interplay of electronic degrees of freedom. This book explores the possibility of externally modifying the properties of manganite based thin films and heterojunctions by epitaxial strain or artificial boundaries, which could give us new insights to generating properties at the interface between film and heterointerface. The book describes some of the sophisticated concepts concerning manganite-based films and heterojunctions in clear detail, bringing us closer than ever to understanding the research progress and main trends. What we can learn from the book is highly thought-provoking: the explanation of the strain stabilisation and strain induced effects in manganite based films and heterointerfaces; the comparison between electrical transport in manganite based heterojunctions and semiconductor junctions; and, in particular, the interpretation of the photo-induced and photo-voltaic effect in manganite based films and heterojunctions. Furthermore, the magneto-tunability at the manganite based heterointerfaces leading to the design of new functionalities will be highlighted at last.

Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1904

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Author: Yuan Lin
Publisher: John Wiley & Sons
ISBN: 3527696458
Category : Technology & Engineering
Languages : en
Pages : 328

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This concise reference summarizes the latest results in nano-structured thin films, the first to discuss both deposition methods and electronic applications in detail. Following an introduction to this rapidly developing field, the authors present a variety of organic and inorganic materials along with new deposition techniques, and conclude with an overview of applications and considerations for their technology deployment.

Author: Asim K. Ray
Publisher: John Wiley & Sons
ISBN: 1119529476
Category : Technology & Engineering
Languages : en
Pages : 628

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Book Description
Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.

Author: Douglas B. Chrisey
Publisher: Wiley-Interscience
ISBN: 9780471592181
Category : Technology & Engineering
Languages : en
Pages : 0

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Book Description
A comprehensive overview of what is required to set up and begin research in this newly developing technology and understand the basics of the process. Internationally recognized experts in their fields cover such fundamentals as history, theory, film characteristics, surface modification, laser technology, materials and applications including excellent reviews regarding the entire areas of semiconductor buffer layers, thin-film ferroelectrics and ferrites along with the work involving films deposited by PLD.

Author: David D. Awschalom
Publisher: Springer Science & Business Media
ISBN: 9401705321
Category : Science
Languages : en
Pages : 216

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Book Description
The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.

Author: Gan-Moog Chow
Publisher: Springer Science & Business Media
ISBN: 9401140529
Category : Technology & Engineering
Languages : en
Pages : 379

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Book Description
Nanostructured films and coatings possess unique properties due to both size and interface effects. They find many applications in areas such as electronics, catalysis, protection, data storage, optics and sensors. The focus of the present book is on synthesis and processing; advanced characterization techniques; properties (including mechanical, chemical, electronic, thermal, catalytic, and magnetic); modelling of interlayer and intralayer interfaces; and applications.

Author: Seungbum Hong
Publisher: Springer
ISBN: 1489975373
Category : Technology & Engineering
Languages : en
Pages : 280

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Book Description
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.