Author: Fazal Ali
Publisher: Artech House Microwave Library
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 404
Book Description
Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.
HEMTs and HBTs
Author: Fazal Ali
Publisher: Artech House Microwave Library
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 404
Book Description
Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.
Publisher: Artech House Microwave Library
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 404
Book Description
Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.
Electrical and Thermal Characterization of MESFETs, HEMTs, and HBTs
Author: Robert Anholt
Publisher: Artech House Microwave Library
ISBN:
Category : Science
Languages : en
Pages : 338
Book Description
Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
Publisher: Artech House Microwave Library
ISBN:
Category : Science
Languages : en
Pages : 338
Book Description
Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
Hemts And Hbts: Devices, Fabrication, And Circuits
Optical Characterization and Optimization of HEMTs and HBTs for Microwave Applications
WDM and Photonic Networks
Author: D. W. Faulkner
Publisher: IOS Press
ISBN: 9781586030667
Category : Computers
Languages : en
Pages : 244
Book Description
Volume 1 WDM and Photonic Networks will focus on recent developments in long-haul WDM and photonic networks and will include invited papers from key vendors and technologists. A paper on DWDM by Lucent will show how Raman amplification enables the quadrupling of the line rate from OC-192 to OC-768 in a recent 1.6Tb/s experiment.
Publisher: IOS Press
ISBN: 9781586030667
Category : Computers
Languages : en
Pages : 244
Book Description
Volume 1 WDM and Photonic Networks will focus on recent developments in long-haul WDM and photonic networks and will include invited papers from key vendors and technologists. A paper on DWDM by Lucent will show how Raman amplification enables the quadrupling of the line rate from OC-192 to OC-768 in a recent 1.6Tb/s experiment.
Defect Recognition and Image Processing in Semiconductors 1997
Author: J. Doneker
Publisher: Routledge
ISBN: 1351456466
Category : Science
Languages : en
Pages : 552
Book Description
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Publisher: Routledge
ISBN: 1351456466
Category : Science
Languages : en
Pages : 552
Book Description
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Fundamentals of RF and Microwave Transistor Amplifiers
Author: Inder Bahl
Publisher: John Wiley & Sons
ISBN: 9780470462317
Category : Technology & Engineering
Languages : en
Pages : 696
Book Description
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Publisher: John Wiley & Sons
ISBN: 9780470462317
Category : Technology & Engineering
Languages : en
Pages : 696
Book Description
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Analysis and Simulation of Heterostructure Devices
Author: Vassil Palankovski
Publisher: Springer Science & Business Media
ISBN: 3709105609
Category : Technology & Engineering
Languages : en
Pages : 309
Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Publisher: Springer Science & Business Media
ISBN: 3709105609
Category : Technology & Engineering
Languages : en
Pages : 309
Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Silicon
Author: Paul Siffert
Publisher: Springer Science & Business Media
ISBN: 3662098970
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.
Publisher: Springer Science & Business Media
ISBN: 3662098970
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.
Are We There Yet? - A Metamorphic HEMT and HBT Perspective
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Metamorphic epitaxy technique offers the possibility of combining the advantages of low-cost and manufacturability of GaAs substrates and the high performance of InP-based devices. This paper will present the recent development of metamorphic HEMTs and HBTs and discuss their readiness for commercialization.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Metamorphic epitaxy technique offers the possibility of combining the advantages of low-cost and manufacturability of GaAs substrates and the high performance of InP-based devices. This paper will present the recent development of metamorphic HEMTs and HBTs and discuss their readiness for commercialization.