Author: Joseph Stewart BravmanPublisher:
ISBN:
Category : Electromagnetic waves
Languages : en
Pages : 140
Book Description
Helicon Wave Propagation in InSb Rectangular Samples
Author: Joseph Stewart BravmanPublisher:
ISBN:
Category : Electromagnetic waves
Languages : en
Pages : 140
Book Description
Propagation of Helicon Waves in InSb and InAs
Author: H. FlietnerPublisher:
ISBN:
Category :
Languages : en
Pages : 14
Book Description
The propagation of helicon waves in InSb and InAs is studied at room temperature and at a frequency of 24.8 GHz by a resonance and a phase-comparison method. Agreement between the experimental and theoretical dispersion relation is obtained by assuming an isotropic effective mass and a constant relaxation time.
An Experiment on Helicon Waves in InSb
Author: Frank LindvallPublisher:
ISBN:
Category : Electromagnetic waves
Languages : en
Pages : 20
Book Description
An Experimental Investigation of Wave Propagation in Semiconductors
Author: Barry Ernest BurkePublisher:
ISBN:
Category : Radio waves
Languages : en
Pages : 182
Book Description
Nuclear Science Abstracts
Author: Helicon Propagation in Indium Antimonide and Gray Tin
Author: P. S. PeercyPublisher:
ISBN:
Category : Energy-band theory of solids
Languages : en
Pages : 264
Book Description
Thermal Effects in the Operation of GaAs Transferred Electron Microwave Oscillators
Author: Joseph Stewart BravmanPublisher:
ISBN:
Category : Oscillators, Electric
Languages : en
Pages : 360
Book Description
A conceptually simple, three part methodology is applied to the understanding of thermal effects in GaAs transferred electron microwave oscillators. The results are experimentally based, but given theoretical support. The use of a basic thermal model composed of a series of lumped thermal resistances produces two important transient and steady-state temperatures; the temperature difference across the active layer, and the maximum active layer temperature. These are obtained from the input power and geometrical fabrication factors, and become the input parameters in a modification of the two-terminal device V-I characteristic. This characteristic is shown to be well described by three parameters which are obtained from an understanding of the internal diode physics. The parameters are the thermally modified peak and valley currents and low-field resistance of the diode structure. It will be shown that these three variables are sufficient to characterize the device, and when coupled to the RF circuit at the device-circuit interface, provide the desired knowledge of the observables of oscillator operation. These observables are peak and average power output, efficiency, frequency, stability, and a definition of the maximum bias and load. (Author).
Annual Report to the President
Author: Cornell University. College of EngineeringPublisher:
ISBN:
Category : Engineering
Languages : en
Pages : 936
Book Description
Author: 
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