Gunn-effect Electronics PDF Download

Author: B. G. Bosch
Publisher: John Wiley & Sons
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 456

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Author: Wei Ching Tsai
Publisher:
ISBN:
Category : Microwave circuits
Languages : en
Pages : 374

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Author: P. J. Bulman
Publisher:
ISBN: 9780121408503
Category : Electronic equipment: Gunn effect diodes
Languages : en
Pages : 402

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Author: Hans Hartnagel
Publisher: Heinemann Educational Publishers
ISBN:
Category : Gunn effect
Languages : en
Pages : 160

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Author: Seid Hossein Izadpanah
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: G. S. Hobson
Publisher: Oxford University Press, USA
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 152

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Author: Michael S. Shur
Publisher: Springer Science & Business Media
ISBN: 1489919899
Category : Technology & Engineering
Languages : en
Pages : 677

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Book Description
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Author: J. Barrera
Publisher:
ISBN:
Category :
Languages : en
Pages : 58

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Book Description
Further tuning experiments with pulsed and CW Gunn oscillators confirm the general two mode operation in a resonant circuit as discussed in the previous report: a widely tunable negative conductance mode and a domain mode of limited tunability. CW operation was obtained for samples with a Gunn frequency near 2 GHz were operated pulsed. (Author).

Author: Sigfrid Yngvesson
Publisher: Springer Science & Business Media
ISBN: 1461539706
Category : Technology & Engineering
Languages : en
Pages : 481

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We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, which covered the physical aspects, as well as the aspects of interest to the engineer who incorporates such devices in his designs. It was also felt that it would be im portant to introduce the most recently developed devices (HFETs, HBTs, and other advanced devices) as early as possible.

Author: Joseph Ronald Domitrowich
Publisher:
ISBN:
Category :
Languages : en
Pages : 238

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