Author: Yongjo Park
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Category :
Languages : en
Pages : 0

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Author:
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ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 800

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Author:
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ISBN:
Category :
Languages : en
Pages : 13

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The objective of this program is to develop techniques for the vapor phase growth of high resistivity epitaxial layers of gallium arsenide on semi-insulating gallium arsenide substrates. A capability to grow such layers of high quality material with minimum structural defects and good surface quality for use as 'buffer' layers prior to the growth of active layers for such devices as FETS and TELDS will eliminate the device performance problems caused by poor and inconsistent substrate quality. (Author).

Author: James Richard Shealy
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ISBN:
Category : Epitaxy
Languages : en
Pages : 548

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Author: David A. Stevenson
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Category :
Languages : en
Pages : 17

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A research program is described on the topic of impurity incorporation during the growth of GaAs epitaxial layers. The major portion of the research was the design, construction, and characterization of a molecular beam mass spectrometry (MBMS) system and its use as a diagnostic analytical tool to evaluate typical gaseous environments used in the growth of III-V single crystal layers. The fundamental gas dynamics of the MBMS sampling process were studied as well as the limitations and correction factors for this technique. Two crystal growth environments were analyzed: a liquid phase epitaxial (LPE) GaAs growth system; and an organometallic vapor phase epitaxy (OMVPE) system. In the former system, it was shown that there are significant concentrations of O, C, Si gaseous species in the gas ambient which appear to be the major potential impurities. For OMVPE, two topics were emphasized: the side reactions of the organometallic (OM) reactants, particularly those involving oxygen containing species; and the graphite-OM interaction.

Author: M. O. Manasreh
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ISBN:
Category : Science
Languages : en
Pages : 552

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author:
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ISBN:
Category :
Languages : en
Pages : 0

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This report covers the period December 1988 to February 1989. The planned work for Quarter 10 was as follows: Continue growth and assessment of Gallium Arsenide/Silicon FET structures; Continue development of low temperature (approx. 900 C) silicon substrate cleaning techniques; Carry out further growth on profiled silicon substrates; Defect reducing experiments using cyclic thermal anneal routines during growth; Study the effect of substrate orientation, on nucleation and initial stages of growth; TEM studies and assessment of defect reducing experiments, nucleation, and initial stages of growth; and Design and fabrication of low complexity structures containing more than one device function. Keywords: Annealing; Crystallographic slip; Field effect transistors; Aluminum gallium arsenides; Organometallic vapor phase epitaxy. (aw).

Author: Nicholas George Paraskevopoulos
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ISBN:
Category :
Languages : en
Pages : 432

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Author:
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Category :
Languages : en
Pages : 10

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The controlled introduction of oxygen into GaAs and In(x)Ga(1-x)As during metal organic vapor phase epitaxy was studied through the development of unique oxygen doping sources. The electrical, optical and other deep level properties of the GaAs: defect were studied over an oxygen concentration range of 10(exp 16) to 10(exp 20)/cu cm. Oxygen introduces several levels into the band gap of GaAs leading to the compensation of the electrically active shallow dopants and a reduction in the band edge photoluminescence. High resistivity GaAs films can be produced using oxygen doping with resistivities in excess of 10(exp 9)/Ohms. cu cm indicating that this material can be one of the most effective device isolation materials yet developed. Since this process is easily integrated into the existing MOVPE growth technology, high resistivity layers can be made part of the device structure. The immediate application of these materials could be in microwave devices where the high resistivity of the materials can be used to eliminate the device crosstalk which can diminish the performance of these circuits. High power electronic devices and higher performance optical detectors may also be possible. jg p.1.

Author: Materials Research Society. Fall Meeting
Publisher:
ISBN:
Category : Materials
Languages : en
Pages : 384

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