Author: Oscar Jesus AlbornozPublisher:
ISBN:
Category :
Languages : en
Pages : 78
Book Description
Growth of Crystals by the Bridgman-Stockbarger Method
Author: Oscar Jesus AlbornozThe Growth of SiC Crystals from Vapor by the Bridgman-Stockbarger Method
Author: Juris SmiltensPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 40
Book Description
From the dissociation curve (P vs. T), an equation for the rate of raising the pressure P of the binary vapor for obtaining the required linear growth rate of the crystal of c centimeters per hour is derived. It is shown that the rate is nearly proportional to P. Modifications of the furnace since the last report (Mat. Res. Bull. 4, S85, 1969) are described. Justification for the use of helium as the inert ambient gas is given. Two techniques are used: (1) growing with constant temperature of the crucible point and (2) growing with constant pressure of the sublimation bottle. To date, only polycrystalline boules consisting of large grains have been obtained. It is believed, however, that with certain technological improvements the methods that are developed here will ultimately yield single crystal boules. As a by-product, small cubic crystals, about one mm in the largest dimension, with good quality faces (cube and octahedron) have been obtained.
The Growth of Single Crystals
Author: R. A. LaudisePublisher: Prentice Hall
ISBN:
Category : Science
Languages : en
Pages : 376
Book Description
Growth of Binary Alloyed Semiconductor Crystals by the Vertical Bridgman-Stockbarger Process with a Strong Magnetic Field
Author: Stephen James LaPointePublisher:
ISBN:
Category :
Languages : en
Pages : 27
Book Description
Keywords: crystal growth, bridgman.
The Growth of SiC Crystals from Vapor by the Bridgman-Stockbarger Method
Author: Juris SmiltensPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 0
Book Description
From the dissociation curve (P vs. T), an equation for the rate of raising the pressure P of the binary vapor for obtaining the required linear growth rate of the crystal of c centimeters per hour is derived. It is shown that the rate is nearly proportional to P. Modifications of the furnace since the last report (Mat. Res. Bull. 4, S85, 1969) are described. Justification for the use of helium as the inert ambient gas is given. Two techniques are used: (1) growing with constant temperature of the crucible point and (2) growing with constant pressure of the sublimation bottle. To date, only polycrystalline boules consisting of large grains have been obtained. It is believed, however, that with certain technological improvements the methods that are developed here will ultimately yield single crystal boules. As a by-product, small cubic crystals, about one mm in the largest dimension, with good quality faces (cube and octahedron) have been obtained.
Notes on Growing Single Crystals
Author: Edward CatalanoPublisher:
ISBN:
Category : Cobaltous fluoride
Languages : en
Pages : 26
Book Description
Growth of Crystals
Author: E.I. GivargizovPublisher: Springer Science & Business Media
ISBN: 1461505372
Category : Technology & Engineering
Languages : en
Pages : 205
Book Description
Growth of Crystals, Volume 21 presents a survey, with detailed analysis, of the scientific and technological approaches, and results obtained, by leading Russian crystal growth specialists from the late 1990's to date. The volume contains 16 reviewed chapters on various aspects of crystal and crystalline film growth from various phases (vapour, solution, liquid and solid). Both fundamental aspects, e.g. growth kinetics and mechanisms, and applied aspects, e.g. preparation of technically important materials in single-crystalline forms, are covered. A large portion of the volume is devoted to film growth, including film growth from eutectic melt, from amorphous solid state, kinetics of lateral epitaxy and film growth on specially structured substrates. An important chapter in this section covers heteroepitaxy of non-isovalent A3B5 semiconductor compounds, which have important applications in the field of photonics. The volume also includes a detailed analysis of the structural aspects of a broad range of laser crystals, information that is invaluable for successfully growing perfect, laser-effective, single crystals.
The Growth of Single Crystals
Author: Charles S. SahagianPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 74
Book Description
Single crystals of over 100 different electronically active materials have been synthesized using a variety of methods, including growth by flame-fusion, flux, melt, gel diffusion, low-temperature solution, vapor, as well as synthesis by ultra-high-pressure techniques. These crystals, including a large number of doped specimens, emphasize oxides, garnets, silicates, ferrites, fluorides, as well as a large variety of other electromagnetic materials. Charts are presented giving summary data on single crystals grown, percentage and kind of dopants, growth methods and apparatus, crystal dimensions and other physical characteristics, primary research interest or use, crystal system, class, space group, and pertinent references. Several of the growth methods and recent Laboratory accomplishments are described. (Author).
Crystal Growth Processes
Author: James Coble BricePublisher: Longman Scientific and Technical
ISBN:
Category : Science
Languages : en
Pages : 320
Book Description
The Influence of Convection on Radial Segregation in the Vertical Bridgman-stockbarger Crystal Growth Technique
Author: Gregory T. NeugebauerPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages :
Book Description