Author: Victor FuenzalidaPublisher:
ISBN:
Category :
Languages : en
Pages : 125
Book Description
Growth Kinetics of Silicon Films
Author: Victor FuenzalidaGrowth Kinetics of SiO(sub 2) and the Ellipsometric Study of SiO(sub 2) Films on Silicon
Author: Shou-Chen KaoGrowth Kinetics and Barrier Properties of Atmospheric Pressure Chemical Vapor Deposited Silicon Dioxide Thin Films
Author: Jonathan Daniel Chapple SokolPublisher:
ISBN:
Category : Thin films
Languages : en
Pages : 440
Book Description
Growth Kinetics of III-V Semiconductor Thin Films by Molecular Beam Epitaxy with Gas Sources
Author: Bingwen LiangThe Kinetics of Secondary Grain Growth in Rapidly Thermal Annealed Thin Silicon Films
Author: Stephen Michael GarrisonPublisher:
ISBN:
Category :
Languages : en
Pages : 132
Book Description
H-Mediated Film Growth and Dopant Incorporation Kinetics During Silicon Germanium(001):boron Gas-Source Molecular Beam Epitaxy
Author: Kinetics of Silicon Epitaxy Using SiH4 in a Rapid Thermal Chemical Vapor Deposition Reactor
Author: M. LiehrPublisher:
ISBN:
Category :
Languages : en
Pages : 3
Book Description
The equilibrium hydrogen surface coverage on Si(100) during silicon epitaxy using SiH4 has been measured in a rapid thermal chemical vapor deposition reactor. The hydrogen coverage could be 'frozen out' completely on the surface by a rapid cool-down and pump-down of the reactor up to temperatures of 575 C; at temperatures above 575 C only partial 'freeze-out' is achieved. Surface hydrogen was titrated in situ using the reactor as a thermal desorption spectrometer. Epitaxial silicon films were grown in the temperature range 450-700 C and the film growth kinetics was correlated with the equilibrium hydrogen coverage. The growth mechanism changes from the low-temperature regime, where the surface is hydrogen covered, to the high-temperature regime, where the surface is essentially clean. (jes).
Kinetic Studies of Growth of Si and SiGe Thin Films
Author: Yongjun ZhengGrowth Kinetics of Chemical Compound Layers
Author: Vasiliĭ Ivanovich DybkovPublisher: Cambridge Int Science Publishing
ISBN: 1898326347
Category : Science
Languages : en
Pages : 201
Book Description
"Thompson and Link energetically chart a transforming course toward more meaningful critical dialogue while providing practical general guidance through the crosscurrents of contemporary literary-critical-cultural debates."--Jacket.
Silicon Molecular Beam Epitaxy
Author: E. KasperPublisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.