Author: Lei L. KerrPublisher:
ISBN:
Category :
Languages : en
Pages : 472
Book Description
Growth, Characterization and Thermodynamic Modeling of Absorber and Transparent Conducting Oxides for Copper Indium Diselenide Based Thin Film Solar Cells
Author: Lei L. KerrDissertation Abstracts International
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 788
Book Description
Preparation and Characterization of Copper Indium Gallium Diselenide Powders and Films Used in the Absorber Layer of Thin-film Solar Cells
Author: 吳忠憲Preparation and Characterization of Copper Indium Gallium Diselenide and Copper Zinc Tin Sulfide Powders Used as the Absorber of Thin-film Solar Cells
Author: 林詣軒Zinc Oxide Sputter Deposition and Modeling of Copper-indium-gallium-diselenide-based Thin Film Solar Cells
Author: Wei LiuPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The inverse modeling process successfully identified the defect distribution in a CIGS layer that matched a known cell performance. In an ensuing optimization step, optimal defect concentrations were found, revealing that the shallow acceptor defect concentrations are favorable for increasing the efficiency.
Preparation and Characterization of Copper Indium Diselenide Powders Used as the Absorber of Solar Cells
Author: 李宗翰Characterization & Modification of Copper and Iron Oxide Nanoparticles for Application as Absorber Material in Silicon Based Thin Film Solar Cells
Author: Maurice René NuysPublisher:
ISBN: 9783958060968
Category :
Languages : en
Pages :
Book Description
Preparation and Characterization of Silver Copper Indium Gallium Diselenide Thin-film Solar Cells
Author: 吳俊杰Doped and Multi-compound ZnO-based Transparent Conducting Oxides for Silicon Thin Film Solar Cells
Author: Paz Carreras SeguíSputter Deposited Zinc-Magnesium Alloyed Transparent Conducting Oxides for Copper Indium Gallium Diselenide Solar Cells
Author: Albert B Hicks (III.)Publisher:
ISBN:
Category :
Languages : en
Pages : 134
Book Description
Increased Scherer grain size. A novel figure of merit (FOM) technique is presented as an absolute comparison of TCO performance in terms of CIGS devices. A spectrum-energy integration is performed to quantify the TCO loss into a single optical parameter, which is then combined with the resistivity parameter for the FOM. The TCO FOM is modified to predict the loss of device output power in CIGS as a result of adjusting the TCO. A TCO of graded thickness between the metal contacts offers a reduction in TCO-associated loss in CIGS by approximately 15%.