Growth and Electronic Properties of Nanostructured Epitaxial Graphene on Silicon Carbide PDF Download

Author: David Britt Torrance
Publisher:
ISBN:
Category : Graphene
Languages : en
Pages :

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Book Description
The two-dimensional phase of carbon known as graphene is actively being pursued as a primary material in future electronic devices. The goals of this thesis are to investigate the growth and electronic properties of epitaxial graphene on SiC, with a particular focus on nanostructured graphene. The first part of this thesis examines the kinetics of graphene growth on SiC(0001) and SiC(0001 Ì ...) by high-temperature sublimation of the substrate using a custom-built, ultra-high vacuum induction furnace. A first-principles kinetic theory of silicon sublimation and mass-transfer is developed to describe the functional dependence of the graphene growth rate on the furnace temperature and pressure. This theory can be used to calibrate other graphene growth furnaces which employ confinement controlled sublimation. The final chapter in this thesis involves a careful study of self-organized epitaxial graphene nanoribbons (GNRs) on SiC(0001). Scanning tunneling microscopy of the sidewall GNRs confirms that these self-organized nanostructures are susceptible to overgrowth onto nearby SiC terraces. Atomic-scale imaging of the overgrown sidewall GNRs detected local strained regions in the nanoribbon crystal lattice, with strain coefficients as high as 15%. Scanning tunneling spectroscopy (STS) of these strained regions demonstrate that the graphene electronic local density of states is strongly affected by distortions in the crystal lattice. Room temperature STS in regions with a large strain gradient found local energy gaps as high as 400 meV. Controllable, strain-induced quantum states in epitaxial graphene on SiC could be utilized in new electronic devices.

Author: Gemma Rius
Publisher: CRC Press
ISBN: 1351736213
Category : Science
Languages : en
Pages : 311

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Book Description
This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.

Author: Nunzio Motta
Publisher: CRC Press
ISBN: 1351736248
Category : Science
Languages : en
Pages : 270

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Book Description
Graphene, the wonder material of the 21st century, is expected to play an important role in future nanoelectronic applications, but the only way to achieve this goal is to grow graphene directly on a semiconductor, integrating it in the chain for the production of electronic circuits and devices. This book summarizes the latest achievements in this field, with particular attention to the graphitization of SiC. Through high-temperature annealing in a controlled environment, it is possible to decompose the topmost SiC layers, obtaining quasi-ideal graphene by Si sublimation with record electronic mobilities, while selective growth on patterned structures makes possible the opening of a gap by quantum confinement. The book starts with a review chapter on the significance and challenges of graphene growth on semiconductors, followed by three chapters dedicated to an up-to-date analysis of the synthesis of graphene in ultrahigh vacuum, and concludes with two chapters discussing possible ways of tailoring the electronic band structure of epitaxial graphene by atomic intercalation and of creating a gap by the growth of templated graphene nanostructures.

Author: Edvige Celasco
Publisher: John Wiley & Sons
ISBN: 1119468612
Category : Technology & Engineering
Languages : en
Pages : 857

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Book Description
This unique multidisciplinary 8-volume set focuses on the emerging issues concerning graphene materials and provides a shared platform for both researcher and industry. The Handbook of Graphene comprises a set of 8 individual volumes that brings an interdisciplinary perspective to accomplish a more detailed understanding of the interplay between the synthesis, structure, characterization, processing, applications and performance of the advanced materials. The Handbook of Graphene comprises 140 chapters from world renowned experts. Volume 1 is solely focused on Growth, Synthesis, and Functionalization of Graphene. Some of the important topics include but not limited to: Graphite in metallic materials-growths, structures and defects of spheroidal graphite in ductile iron; synthesis and quality optimization; methods of synthesis and physico-chemical properties of fluorographenes; graphene-SiC reinforced hybrid composite foam: response to high strain rate deformation; atomic structure and electronic properties of few-layer graphene on SiC(001); features and prospects for epitaxial graphene on SiC; graphitic carbon/graphene on Si(111) via direct deposition of solid-state carbon atoms: growth mechanism and film characterization; chemical reactivity and variation in electronical properties of graphene on Ni(111) and reduced graphene oxide; chlorophyll and graphene: a new paradigm of biomimetic symphony; graphene structures: from preparations to applications; three-dimensional graphene-based structures: production methods, properties and applications; electrochemistry of graphene materials; hydrogen functionalized graphene nanostructure material for spintronic application; the impact of uniaxial strain and defect pattern on magnetoelectronic and transport properties of graphene; exploiting graphene as an efficient catalytic template for organic transformations: synthesis, characterization and activity evaluation of graphene-based catalysts; exfoliated graphene based 2D materials; synthesis and catalytic behaviors; functionalization of graphene with molecules and/or nanoparticles for advanced applications; carbon allotropes "between diamond and graphite": how to create semiconductor properties in graphene and related structures.

Author: Viera Skakalova
Publisher: Elsevier
ISBN: 0857099337
Category : Technology & Engineering
Languages : en
Pages : 401

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Book Description
Graphene: Properties, Preparation, Characterisation and Devices reviews the preparation and properties of this exciting material. Graphene is a single-atom-thick sheet of carbon with properties, such as the ability to conduct light and electrons, which could make it potentially suitable for a variety of devices and applications, including electronics, sensors, and photonics. Chapters in part one explore the preparation of , including epitaxial growth of graphene on silicon carbide, chemical vapor deposition (CVD) growth of graphene films, chemically derived graphene, and graphene produced by electrochemical exfoliation. Part two focuses on the characterization of graphene using techniques including transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and Raman spectroscopy. These chapters also discuss photoemission of low dimensional carbon systems. Finally, chapters in part three discuss electronic transport properties of graphene and graphene devices. This part highlights electronic transport in bilayer graphene, single charge transport, and the effect of adsorbents on electronic transport in graphene. It also explores graphene spintronics and nano-electro-mechanics (NEMS). Graphene is a comprehensive resource for academics, materials scientists, and electrical engineers working in the microelectronics and optoelectronics industries. - Explores the graphene preparation techniques, including epitaxial growth on silicon carbide, chemical vapor deposition (CVD), chemical derivation, and electrochemical exfoliation - Focuses on the characterization of graphene using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and Raman spectroscopy - A comprehensive resource for academics, materials scientists, and electrical engineers

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: Sang Won Lee
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description
The discovery of free-standing graphene in 2004 has attracted wide attention in both scientific community and industry because of its unusual electronic structure and properties. Due to the possible applications of graphene, many attempts to produce high-quality wafer-scale graphene films have been actively tried in the materials science and other scientific communities. Thermal decomposition of silicon carbide (SiC) is currently considered as one of the most promising routes toward the synthesis of well-controlled and characterized graphene films for electronic applications. This thesis focuses on the synthesis, structure and properties of epitaxial graphene on SiC. In the first chapter, I will investigate the structural properties of EG layers grown on the C-face of 4H-SiC in vacuum or Ar environments using synchrotron-based X-ray diffraction. The qualities and characteristics of layers will be also correlated with carrier mobilities obtained from Hall measurements. Since the Ar atmosphere produced higher quality graphene films on SiC than in vacuum, the inert-gas mediated thermal decomposition of SiC is regarded so far as the most effective method for the controlled EG growth. However, most studies have been done on the Si-face of SiC because of its slower reaction kinetics, which results in relatively uniform film thickness compared to the C-face. Nevertheless, there is significant interest in the C-face of SiC due to the superior electrical properties of EG grown on C-face SiC as compared to that grown on the Si-face. We find that Ar background pressure produces uniform graphene films on the C-face and the electronic properties (i.e. carrier mobility) of the films surpass that of vacuum-grown films due to larger crystalline domains formed in EG when the Ar pressure is above a certain threshold. In the second chapter, I will propose an alternative low-temperature, spatially controlled and scalable epitaxial graphene synthesis technique based on laser-induced surface decomposition of SiC. The high temperatures required in the conventional method are not compatible with large-scale device integration where different materials must be deposited and patterned prior to the formation of the semiconductor layer and limit the synthesis to single-crystal SiC substrates. Our technique is compatible with large-scale device integration. Furthermore, laser synthesis of graphene offers the advantage of combining synthesis and patterning in one step as the process can be designed to form graphene devices in predetermined locations on the substrate. In the last chapter, I will compare the structural properties of laser-synthesized EG on the Si-face and on the C-face of SiC. EG films on the C-face of 4H-SiC were successfully synthesized without the formation of carbon nanotubes by our laser technique, which are usually observed on the C-face upon vacuum high temperature anneals. The structural properties of these films were investigated by grazing incidence X-ray diffraction (GIXD) using synchrotron radiation and transmission electron microscopy. Since the graphene formation by UV laser irradiation is partially a photophysical process, I will illustrate the structural implications of the differences between the two formation processes.

Author: Raghu Murali
Publisher: Springer Science & Business Media
ISBN: 1461405475
Category : Science
Languages : en
Pages : 271

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Book Description
This book describes how will graphene can be used as a replacement for Silicon technology “ and the potential benefits of using graphene in a wide variety of electronic applications. Graphene has emerged as a potential candidate to replace traditional CMOS for a number of electronic applications; this book presents the latest advances in graphene nanoelectronics and details its use in alternative channel materials, on-chip interconnects, heat spreaders, RF transistors, NEMS, and sensors. The book also provides details on the various methods to grow graphene, including epitaxial, CVD, and chemical methods. With the growing interest in this material, this book serves as a spring-board for anyone trying to start working on this topic. The book is also suitable to experts who wish to update themselves with the latest findings in the field.

Author: Hassan Raza
Publisher: Springer Science & Business Media
ISBN: 3642229840
Category : Science
Languages : en
Pages : 611

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Book Description
Graphene is a perfectly two-dimensional single-atom thin membrane with zero bandgap. It has attracted huge attention due to its linear dispersion around the Dirac point, excellent transport properties, novel magnetic characteristics, and low spin-orbit coupling. Graphene and its nanostructures may have potential applications in spintronics, photonics, plasmonics and electronics. This book brings together a team of experts to provide an overview of the most advanced topics in theory, experiments, spectroscopy and applications of graphene and its nanostructures. It covers the state-of-the-art in tutorial-like and review-like manner to make the book useful not only to experts, but also newcomers and graduate students.

Author: Dorr Oliver Campbell
Publisher:
ISBN:
Category :
Languages : en
Pages : 230

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Book Description
Graphene holds great promise as a material for high-speed electronics, especially as Si technology approaches its performance limits. Growth of epitaxial graphene by thermal decomposition of SiC is considered to be one of the most promising production routes since it has the potential to produce homogenous, wafer-size films directly on a semi-insulating or semiconducting substrate. Furthermore, graphene's planar 2-D structure enables devices and circuit designs with standard top-down lithography and processing techniques. However, the growth mechanism of graphene on SiC is not very well understood and much work remains to be done to improve the morphology, domain size and epitaxial quality of the grown graphene in order to take advantage of the unique properties of the material. This research work was aimed at using a modified CVD chamber in the Cornell University Wide-Bandgap-Semiconductor Laboratory to optimize the growth of epitaxial graphene by controlled decomposition of 6H-SiC(0001) in an argon mediated gas flow at near atmospheric pressure. Grown films were characterized using Raman spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. Uniform large-area monolayer and few-layer epitaxial graphene were successfully grown on SiC terraces of up to 8 [MICRO SIGN]m wide, and with Hall mobilities of up to 840 cm2/V.s. The as-grown graphene was found to be intrinsically electron doped with sheet carrier density in the range of 3 - 9 x 1012 cm-2. However, certain growth features that tended to disrupt growth by uniform step flow decomposition were observed. These included deep rounded pits at higher temperatures, shallow triangular pits, arrow-like incursions across terraces, finger growths, residual SiC islands on terraces, nucleation of graphene at multiple defect points on terraces, and extra graphene layers at step edges. Further research is required to determine the mechanisms of formation of these features and to determine how they can be eliminated or reduced. For the first time SiC grown epitaxial graphene films, transferred from the substrate by a special process, was imaged in plan-view by TEM. The TEM images, along with selected-area electron diffraction, showed that a bilayer film had the AB Bernal stacking.!