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Author: Uttam Singisetti Publisher: World Scientific ISBN: 9811216495 Category : Technology & Engineering Languages : en Pages : 258
Book Description
'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Author: Uttam Singisetti Publisher: World Scientific ISBN: 9811216495 Category : Technology & Engineering Languages : en Pages : 258
Book Description
'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Author: Publisher: Academic Press ISBN: 0128228717 Category : Science Languages : en Pages : 482
Book Description
Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. - Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices - Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials
Author: Bahram Nabet Publisher: Woodhead Publishing ISBN: 0081028768 Category : Science Languages : en Pages : 516
Book Description
Every bit of information that circulates the internet across the globe is a pulse of light, that at some point will need to be converted to an electric signal in order to be processed by the electronic circuitry in our data centers, computers, and cell phones. Photodetectors (PD's) perform this conversion with ultra high speed and efficiency, in addition to being ubiquitously present in many other devices ranging from the mundane TV remote controls, to ultra high resolution instrumentation used in Laser Interferometer Gravitational Wave Observatory (LIGO) that reach the edge of the universe and measure gravitational waves. The second edition of "Photodetectors" fully updates the popular first edition with updated information covering the state-of-the-art in modern photodetectors. The 2nd edition starts with basic metrology of photodetectors and common figures-of-merit to compare various devices. It follows with chapters that discuss single-photon detection with Avalanche Photodiodes; organic photodetectors that can be inkjet printed; and silicon-germanium PDs popular in burgeoning field of Silicon Photonics. Internationally recognized experts contribute chapters on one-dimensional, nanowire, PDs as well as high speed zero-dimensional, quantum dot, versions that increase the spectral span as well as speed and sensitivity of PDs and can be produced on various substrates. Solar-blind PDs that operate in harsh environments such as deep space, or rocket engines, are reviewed and new devices in GaN technology . Novel Plasmonic PDs, as well as devices which employ micro-plasma of confined charge in order to make devices that overcome speed limitation of transfer of electronic charge, are covered in other chapters. Using different, novel technologies, CMOS compatible devices are described in two chapters, and ultra high speed PDs that use low-temperature-grown GaAs (LT-GaAs) to detect fast THz signals are reviewed in another chapter. Photodetectors used in application areas of Silicon-Photonics and Microwave-Photonics are reviewed in final chapters of this book. All chapters are of a review nature, providing a perspective of the field before concentrating on particular advancements. As such, the book should appeal to a wide audience that ranges from those with general interest in the topic, to practitioners, graduate students and experts who are interested in the state-of-the-art in photodetection. - Addresses various photodetector devices from ultra high speed to ultra high sensitivity, capable of operation in harsh environments - Considers a range of applications for this important technology, including silicon photonics and photonic integrated circuits - Includes discussions of detectors based on reduced dimensional systems such as quantum wells, nanowires, and quantum dots, as well as travelling wave, and plasmonic detectors
Author: B. Jayant Baliga Publisher: Woodhead Publishing ISBN: 0081023073 Category : Technology & Engineering Languages : en Pages : 420
Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Author: Masataka Higashiwaki Publisher: Springer Nature ISBN: 3030371530 Category : Technology & Engineering Languages : en Pages : 768
Book Description
This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.
Author: Zbigniew Galazka Publisher: CRC Press ISBN: 1000067149 Category : Science Languages : en Pages : 722
Book Description
This book discusses various aspects of different bulk TSO single crystals in terms of thermodynamics; bulk crystal growth using diverse techniques involving gas phase, solution, and melt; and the resulting crystal size, appearance, and structural quality as well as the fundamental properties that were gathered from bulk single crystals. It presents experimental results accompanied by theoretical results, such as band structure and native defects. Combinations of various bulk single crystals along with their properties show great promise in practical device functionality and fabrication. Many TSO-based devices have already been demonstrated in several technical areas, including electronics, optoelectronics, and photovoltaics as well as sensing devices. The book is the first of its kind that brings together a variety of bulk single crystals of scientifically and technically important TSOs along with their properties, which may result in novel devices with unique functionalities.
Author: Stephen Pearton Publisher: Elsevier ISBN: 0128145226 Category : Technology & Engineering Languages : en Pages : 510
Book Description
Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. - Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing - Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more - Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact
Author: Meiyong Liao Publisher: Elsevier ISBN: 0128172568 Category : Technology & Engineering Languages : en Pages : 506
Book Description
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Author: A.V. Narlikar Publisher: Oxford University Press ISBN: 0199533059 Category : Language Arts & Disciplines Languages : en Pages : 957
Book Description
These three volumes are intended to shape the field of nanoscience and technology and will serve as an essential point of reference for cutting-edge research in the field.
Author: Uttam Singisetti
Author: Uttam Singisetti
Author: 
Author: 
Author: Bahram Nabet
Author: B. Jayant Baliga
Author: Masataka Higashiwaki
Author: Zbigniew Galazka
Author: Stephen Pearton
Author: Meiyong Liao
Author: A.V. Narlikar