Author: John Frederick KlemPublisher:
ISBN:
Category :
Languages : en
Pages : 252
Book Description
Growth and Characterization of Molecular Beam Epitaxial Gallium Arsenide Antimonide and Gallium Antimonide Gallium Arsenide Superlattices
Author: John Frederick KlemGrowth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices
Author: Molecular Beam Epitaxial Growth and Characterization of Indium Antimonide on Gallium Arsenide
Author: Jen-Inn ChyiPublisher:
ISBN:
Category :
Languages : en
Pages : 198
Book Description
Described in this thesis are the molecular beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by transmission electron microscopy (TEM), X-ray rocking curves, Hall measurements, photoluminescence (PL), and transmission measurements. The TEM study reveals pure edge-type, instead of the common 60$spcirc$-type, misfit dislocations at the InSb/GaAs interfaces. The reason for the formation of these misfit dislocations are given. Electrical measurements show that dislocation scattering is an important scattering mechanism in the epilayers. A charged dislocation scattering is proposed to explain the temperature and carrier concentration dependence of electron mobility. Low temperature PL shows a single band-edge transition similar to that of bulk InSb, indicating very little or no residual strain in the epilayers. Indium antimonide p$sp{+}$-n diodes have been successfully fabricated on as-grown and ion-implanted wafers. The electrical characteristics of these diodes compare favorably to those reported on similar devices. Further improvement can be achieved by proper surface passivation. Indium antimonide-Gallium arsenide p-n, p-p, and n-n heterojunctions have also been prepared for this study with all of the junctions exhibiting excellent rectifying characteristics. From capacitance-voltage measurements, the band offsets of InSb/GaAs junctions have been, for the first time, determined experimentally.
Author: 
Author: Seshadri Subbanna
Author: David Andrew Woolf
Author: 
Author: David Ian Westwood
Author: 
Author: