Author: Yung-Chung KaoPublisher:
ISBN:
Category : Gallium compounds
Languages : en
Pages : 170
Book Description
Growth and Characterization of Liquid Phase Epitaxial GaP Layers
Author: Yung-Chung KaoPublisher:
ISBN:
Category : Gallium compounds
Languages : en
Pages : 170
Book Description
The Growth and Characterization of Liquid Phase Epitaxial In0̳.̳5̳3̳Ga0̳.̳4̳7̳As/InP Heterostructures
Author: Peter Schuyler WhitneyPublisher:
ISBN:
Category :
Languages : en
Pages : 482
Book Description
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials
Author: Peter CapperPublisher: John Wiley & Sons
ISBN: 9780470319499
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Liquid Phase Epitaxial Growth and Characterization of High Purity Gallium-indium-arsenide-phosphide Semiconductor Alloys Lattice Matched to Indium Phosphide Substrates
Author: James D. OliverPublisher:
ISBN:
Category : Indium phosphide
Languages : en
Pages : 372
Book Description
Crystal Growth And Characterization Of Advanced Materials - Proceedings Of The International School On Crystal Growth And Characterization Of Advanced Matherials
Author: A N ChristensenPublisher: World Scientific
ISBN: 9814611123
Category : Technology & Engineering
Languages : en
Pages : 556
Book Description
Contents:Fundamental Aspects of Crystal Growth from the Melt (C Paorici & L Zanotti)Phase Diagrams in Crystal Growth (A N Christensen)Growth Procedures and Perfection of Semiconductor Materials (A Lindegaard-Andersen)Atomistic Aspects of Crystal Growth and Epitaxy (I Markov)Fundamentals of Liquid Phase Epitaxial Growth (P Kordos)Determination of Few Selected Basic Parameters of the Investigation of AIII-BV Semiconductors Using X-Ray Methods (H Bruhl)Multijunction Solar Cells (I Chambouleyron)Application of the Mossbauer Spectroscopy to the Study of Magnetic Materials (G Albanese)Metallic Magnetism in Modern Materials (D Givord)and others Readership: Materials scientists.
Current Controlled Liquid Phase Epitaxial (CCLPE) Growth and Characterization of InGaAsP(
Author: Lynora Camille JonesPublisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 112
Book Description
Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications,
Author: M. G. AstlesPublisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 240
Book Description
An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Crystal Growth Bibliography
Author: Publisher: Springer Nature
ISBN: 1461596181
Category :
Languages : en
Pages : 270
Book Description
Epitaxial Crystal Growth
Author: E. LendvayPublisher: Trans Tech Publications Ltd
ISBN: 3035739757
Category : Technology & Engineering
Languages : en
Pages : 979
Book Description
Proceedings of the 1st International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1990
Materials for Optoelectronic Devices, OEICs and Photonics
Author: H. SchlöttererPublisher: Elsevier
ISBN: 0444596755
Category : Science
Languages : en
Pages : 542
Book Description
The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.