Growth and Characterization of Large High Purity Beta Silicon Carbide Single Crystals PDF Download
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Author: William R. Harding Publisher: ISBN: Category : Languages : en Pages : 112
Book Description
The report summarizes the development program in the growth of large high purity beta silicon carbide crystals. Conditions for stable beta growth were partially established. Beta silicon carbide can be grown in the region of 2000-2200C and 28-42 microns pressure. Within this region, large beta crystals will grow by sublimation. Lang topographs of crystals were compared with etched surface structures and petrographic examination. Correlation among the results of these techniques was shown to exist. This analysis indicated the presence of large stacking faults within the structure as well as polytype intergrowths. Resistivity and Hall measurements were made with indications of highly compensated material. (Author).
Author: William R. Harding Publisher: ISBN: Category : Languages : en Pages : 112
Book Description
The report summarizes the development program in the growth of large high purity beta silicon carbide crystals. Conditions for stable beta growth were partially established. Beta silicon carbide can be grown in the region of 2000-2200C and 28-42 microns pressure. Within this region, large beta crystals will grow by sublimation. Lang topographs of crystals were compared with etched surface structures and petrographic examination. Correlation among the results of these techniques was shown to exist. This analysis indicated the presence of large stacking faults within the structure as well as polytype intergrowths. Resistivity and Hall measurements were made with indications of highly compensated material. (Author).
Author: Frank A. Halden Publisher: ISBN: Category : Languages : en Pages : 25
Book Description
Changes in crystal size and morphology were obtained by modifying the process for growing crystals of betasilicon carbide from solution in carbon-saturated melts. Well developed laths and plates were grown under conditions favoring dendritic growth mechanisms (low thermal gradient with moderate stirring). Polyhedral crystals grew under high thermal gradient conditions when high velocity stirring was employed. Three-dimensionaltype growth was also produced from a 73 wt percent ironsilicon alloy under conditions that normally produce lath-type growth. Uncorrected electron mobilities of 700 to 1000 sq cm/v-sec were measured at room temperature, and a few preliminary Hall measurements were made over the temperature range from 77 to 300 K. (Author).
Author: Publisher: ISBN: Category : Languages : en Pages : 25
Book Description
Equipment and growth procedures for growing beta-silicon carbide epitaxially on beta-silicon carbide substrates from methyltrichlorosilane in a carrier gas of hydrogen is described. Hall and resistivity measurements and electron spin resonance measurements are discussed. The results show that the quality of the epitaxially grown material is comparable with that of the best solution grown crystals. Processing steps such as oxidation, masking, and etching have been performed and simple electroluminescent diodes have been fabricated. (Author).
Author: J. R. Littler Publisher: ISBN: Category : Crystal growth Languages : en Pages : 24
Book Description
A high-pressure, high-temperature furnace system is described for crystal growth experiments using crucibles up to 13 cm in diameter and 26 cm high. The vertical temperature gradient is electronically controlled during growth such that the ends of the crucible can be maintained at temperatures above or below the crucible center. Temperatures up to 2800C can be maintained at pressures up to 50 atmospheres. A vacuum capability up to .000001 torr at 1800C has been incorporated into the system. Single crystals of alpha silicon carbide grown in this system at 2600C are described to illustrate its use. (Author).
Author: Publisher: ISBN: Category : Languages : en Pages : 35
Book Description
Beta-SiC is a promising, wide bandgap material for high power electronic devices capable of operation at high temperatures. Its high saturation velocity, high breakdown electric field, and high thermal conductivity point to superior performance for high frequency applications. The successful fabrication of Beta-SiC devices requires high quality films to be epitaxially grown on lattice-matched substrate materials. Single crystals of Beta-SiC offer the optimum substrate material for lattice matching. The major problem to be overcome in the growth of large single crystals of Beta-SiC is polytype alpha-SiC formation. Cubic Beta-SiC crystallizes only below 2000 deg C. Above this temperature, SiC undergoes a phase transformation from the Beta-to the alpha-phase. In Phase I, we investigated two crystal growth techniques: sublimation and gas-vapor transport. We were able to grow small 3C-SiC crystals by both methods.
Author: Kullaiah Byrappa Publisher: Elsevier ISBN: 0815516800 Category : Science Languages : en Pages : 613
Book Description
Crystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow them as large single crystals to be applied in modern industry. This book deals with almost all the modern crystal growth techniques that have been adopted, including appropriate case studies. Since there has been no other book published to cover the subject after the Handbook of Crystal Growth, Eds. DTJ Hurle, published during 1993-1995, this book will fill the existing gap for its readers.The book begins with ""Growth Histories of Mineral Crystals"" by the most senior expert in this field, Professor Ichiro Sunagawa. The next chapter reviews recent developments in the theory of crystal growth, which is equally important before moving on to actual techniques. After the first two fundamental chapters, the book covers other topics like the recent progress in quartz growth, diamond growth, silicon carbide single crystals, PZT crystals, nonlinear optical crystals, solid state laser crystals, gemstones, high melting oxides like lithium niobates, hydroxyapatite, GaAs by molecular beam epitaxy, superconducting crystals, morphology control, and more. For the first time, the crystal growth modeling has been discussed in detail with reference to PZT and SiC crystals.
Author: William R. Harding
Author: William R. Harding
Author: Frank A. Halden
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Author: J. R. Littler
Author: 
Author: Feng Liu
Author: 
Author: Lina Ning
Author: Walter E. Nelson
Author: Kullaiah Byrappa