Author: Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 704
Book Description
Scientific and Technical Aerospace Reports
Author: The Journal of the Acoustical Society of America
Author: Technical Abstract Bulletin
Author: Defense Documentation Center (U.S.)Publisher:
ISBN:
Category : Science
Languages : en
Pages : 828
Book Description
State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V
Author: H. M. NgPublisher: The Electrochemical Society
ISBN: 9781566774192
Category : Technology & Engineering
Languages : en
Pages : 616
Book Description
Heteroepitaxial Semiconductors for Electronic Devices
Author: G.W. CullenPublisher: Springer Science & Business Media
ISBN: 1461262674
Category : Technology & Engineering
Languages : en
Pages : 306
Book Description
Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved.
Crystal Growth Bibliography
Author: Anne M. KeeseePublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 584
Book Description
Nitride Semiconductor Technology
Author: Fabrizio RoccafortePublisher: John Wiley & Sons
ISBN: 3527825258
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
Nitrides and Related Wide Band Gap Materials
Author: A. HangleiterPublisher:
ISBN:
Category : Science
Languages : en
Pages : 440
Book Description
The Symposium on 'Nitrides and related wide band gap materials' at the 1998 Spring Meeting of the European Materials Research Society (E-MRS) in Strasbourg, France, was the third Symposium of its kind at an E-MRS meeting. Beginning in 1996, these Symposia enjoyed a steadily increasing popularity among European and international nitride researchers. Contributions covered the areas of hetero-epitaxy, bulk growth, structural, electrical and optical characterisation and device fabrication. Researchers from about 20 different countries presented their work at this symposium. Naturally, most papers were from within Europe (Germany, France, Russia and the United Kingdom) but there was also a remarkable number of contributions from overseas (USA, Japan and Korea.) For about 5 years now, semiconducting group-III nitrides have attracted an enormous level of research activity all over the world. Essentially this was triggered by the breakthroughs achieved by Shuji Nakamura and his group in Japan, who succeeded in making highly efficient blue, green and yellow light emitting diodes as well as violet laser diodes based on A1GaInN. Since then, intensive research related to material growth, device development, as well as to the fundamental properties of these materials is being carried out. The outstanding contribution of Shuji Nakamura to this field was underlined by his plenary lecture during this E-MRS meeting. He presented his most recent progress towards amber LED's and long-lived violet laser diodes.
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