Author: Bagher BahavarPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 308
Book Description
Growth and Characterization of Beta-silicon Carbide Thin Films
Author: Bagher BahavarPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 308
Book Description
The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor
![The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor PDF](https://books.google.com/books/content/images/frontcover/GZ9RNwAACAAJ?fife=w80-h100)
Author: Kenneth George IrvinePublisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
The Growth and Characterization of Beta Silicon Carbide (β-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor
Author: Kenneth George IrvinePublisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
Epitaxial growth, doping and characterization of monocrystalline beta silicon-carbide thin films and fabriation of electronic devices
Author: Hyeong Joon KimEpitaxial Growth, Doping and Characterization of Monocrystalline Beta Silicon Carbide Thin Films and Fabrication of Electronic Devices
Author: Hyeong Joon KimEpitaxial Growth, Doping and Characterization of Monocrystalline Beta Silicon Carbide Thin Films and Fabrication of Electronic
Author: Hyeong Joon KimNucleation, Epitaxial Growth, and Characterization of [beta]-SiC Thin Films on Si by Rapid Thermal Chemical Vapor Deposition
![Nucleation, Epitaxial Growth, and Characterization of [beta]-SiC Thin Films on Si by Rapid Thermal Chemical Vapor Deposition PDF](https://books.google.com/books/content/images/frontcover/TWLutgAACAAJ?fife=w80-h100)
Author: JiPing LiElectron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates
Author: Joseph J. ComerPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 30
Book Description
Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and radiation. This report is concerned with a study of the growth of thin single crystal films of beta silicon carbide through molten metal intermediates. Thin films of nickel, cobalt, chromium and iron were deposited by vacuum deposition on to the (0001) faces of single crystals of alpha silicon carbide. Then heteroepitaxial layers of beta silicon carbide were deposited through the molten metal films by the hydrogen reduction of methyltrichlorosilane. The deposited films were studied by electron microscopy, electron diffraction and electron beam microprobe analysis to determine the growth mechanism and to arrive at optimum conditions for heteroepitaxial growth. From the results obtained it was concluded that nickel and cobalt were equally effective in promoting epitaxial growth. Films of nickel only 20A in thickness were as effective as those up to 300A. Results with chromium and iron were disappointing for different reasons. Chromium did not etch the substrate surface uniformly because of poor wetting. With iron, whisker growth of beta silicon carbide occurred at the surface. Although in many respects the growth of mechanism resembled that of the vapor-liquid-solid method, certain differences were observed which make the actual growth mechanism using nickel and cobalt films still uncertain. (Author).
Growth, Processing and Characterization of Beta-silicon Carbide Single Crystals
Author: Robert W. BartlettPublisher:
ISBN:
Category :
Languages : en
Pages : 49
Book Description
Epitaxial vapor deposition of beta-silicon carbide on (111) beta-silicon carbide platelets and diborane doping were used to grow p-type layers on n-type substrates. Etching and thin film metallizing procedures were developed for silicon carbide, a chlorine-oxygen gas etch at 900 degrees C being used. Specific surface characteristics of solution-grown crystals, epitaxial crystals, and crystals etched in various fluids were correlated with crystal polarity. (Author).
Author: Hua-shuang Kong