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Book Description
CE TRAVAIL DE THESE EST CONSACRE A LA MISE AU POINT D'UNE TECHNIQUE DE GRAVURE SECHE DU MATERIAU INP ET DE SES COMPOSES GAINAS ET ALINAS, DESTINEE A LA REALISATION DE COMPOSANTS MICROELECTRONIQUES SUR INP. L'EXPLORATION DES CONDITIONS DE GRAVURE DU MATERIAU INP PAR PLASMA CH#4/H#2 A PERMIS D'IDENTIFIER LES MECANISMES DE GRAVURE ET DE DEGAGER UN PROCEDE DE GRAVURE ANISOTROPE TOUT EN EVITANT UNE DEGRADATION DE LA MORPHOLOGIE DE SURFACE. TOUTEFOIS L'INSERTION D'UN TEL PROCEDE DANS LA TECHNOLOGIE DE FABRICATION DE CIRCUITS OPTOELECTRONIQUES INTEGRES A NECESSITE UNE IDENTIFICATION DE LA NATURE ET DE LA PROFONDEUR DES DEFAUTS CREES PAR LA GRAVURE. PAR UN TRAITEMENT CHIMIQUE APPROPRIE, IL EST POSSIBLE DE RESTAURER LES PROPRIETES DU MATERIAU INP AVANT GRAVURE. NOUS AVONS VALIDE CETTE MISE AU POINT A TRAVERS LA GRAVURE DE CAISSONS DANS L'INP DESTINES A L'EPITAXIE DE PHOTODIODES PIN ENTERREES. LA QUALIFICATION DES CONDITIONS DE GRAVURE IONIQUE REACTIVE DU MATERIAU GAINAS ET ALINAS A ETE ETUDIEE EN VUE D'UNE APPLICATION DE LA RIE CH#4/H#2 AUX GRAVURES DES RECESS DE GRILLE DES TRANSISTORS HFET ET HEMT SUR INP. CETTE MISE AU POINT A ETE AXEE SUR LA RECHERCHE D'UNE SELECTIVITE DE GRAVURE ENTRE GAINAS ET ALINAS ET SUR LA MINIMISATION DES DEFAUTS INDUITS DANS CES MATERIAUX. NOUS AVONS MONTRE QUE CETTE TECHNIQUE S'APPLIQUE AVEC PROFIT AU RECESS DE GRILLE DES HFET A CANAL INP. ELLE PERMET DE REDUIRE LES RESISTANCES D'ACCES DU TRANSISTOR, CE QUI AMELIORE LA TRANSCONDUCTANCE ET LE BRUIT EN 1/F. CES RESULTATS ONT ETE VALIDES PAR LA REALISATION D'UN PHOTORECEPTEUR 2,5 GBIT/S DONT LA SENSIBILITE SE SITUE A L'ETAT DE L'ART. L'APPLICATION DE CETTE TECHNIQUE AU HEMT GAINAS INDIQUE QUE CETTE STRUCTURE EST PLUS SENSIBLE AU BOMBARDEMENT IONIQUE: LES DEFAUTS CREES ENTRAINENT UNE AUGMENTATION DES FUITES DE GRILLE. L'UTILISATION D'UN PLASMA ICP CARACTERISE PAR UN CONTROLE SEPARE DE LA DENSITE ET DE L'ENERGIE DES ESPECES GAZEUSES PERMET DE REDUIRE L'ENERGIE DES IONS INCIDENTS. AINSI, NOUS AVONS REALISE DES HEMT PERFORMANTS PRESENTANT DE FAIBLES COURANTS DE FUITE ET UNE TENSION DE CLAQUAGE DE GRILLE ELEVEE
Book Description
CE TRAVAIL DE THESE EST CONSACRE A LA MISE AU POINT D'UNE TECHNIQUE DE GRAVURE SECHE DU MATERIAU INP ET DE SES COMPOSES GAINAS ET ALINAS, DESTINEE A LA REALISATION DE COMPOSANTS MICROELECTRONIQUES SUR INP. L'EXPLORATION DES CONDITIONS DE GRAVURE DU MATERIAU INP PAR PLASMA CH#4/H#2 A PERMIS D'IDENTIFIER LES MECANISMES DE GRAVURE ET DE DEGAGER UN PROCEDE DE GRAVURE ANISOTROPE TOUT EN EVITANT UNE DEGRADATION DE LA MORPHOLOGIE DE SURFACE. TOUTEFOIS L'INSERTION D'UN TEL PROCEDE DANS LA TECHNOLOGIE DE FABRICATION DE CIRCUITS OPTOELECTRONIQUES INTEGRES A NECESSITE UNE IDENTIFICATION DE LA NATURE ET DE LA PROFONDEUR DES DEFAUTS CREES PAR LA GRAVURE. PAR UN TRAITEMENT CHIMIQUE APPROPRIE, IL EST POSSIBLE DE RESTAURER LES PROPRIETES DU MATERIAU INP AVANT GRAVURE. NOUS AVONS VALIDE CETTE MISE AU POINT A TRAVERS LA GRAVURE DE CAISSONS DANS L'INP DESTINES A L'EPITAXIE DE PHOTODIODES PIN ENTERREES. LA QUALIFICATION DES CONDITIONS DE GRAVURE IONIQUE REACTIVE DU MATERIAU GAINAS ET ALINAS A ETE ETUDIEE EN VUE D'UNE APPLICATION DE LA RIE CH#4/H#2 AUX GRAVURES DES RECESS DE GRILLE DES TRANSISTORS HFET ET HEMT SUR INP. CETTE MISE AU POINT A ETE AXEE SUR LA RECHERCHE D'UNE SELECTIVITE DE GRAVURE ENTRE GAINAS ET ALINAS ET SUR LA MINIMISATION DES DEFAUTS INDUITS DANS CES MATERIAUX. NOUS AVONS MONTRE QUE CETTE TECHNIQUE S'APPLIQUE AVEC PROFIT AU RECESS DE GRILLE DES HFET A CANAL INP. ELLE PERMET DE REDUIRE LES RESISTANCES D'ACCES DU TRANSISTOR, CE QUI AMELIORE LA TRANSCONDUCTANCE ET LE BRUIT EN 1/F. CES RESULTATS ONT ETE VALIDES PAR LA REALISATION D'UN PHOTORECEPTEUR 2,5 GBIT/S DONT LA SENSIBILITE SE SITUE A L'ETAT DE L'ART. L'APPLICATION DE CETTE TECHNIQUE AU HEMT GAINAS INDIQUE QUE CETTE STRUCTURE EST PLUS SENSIBLE AU BOMBARDEMENT IONIQUE: LES DEFAUTS CREES ENTRAINENT UNE AUGMENTATION DES FUITES DE GRILLE. L'UTILISATION D'UN PLASMA ICP CARACTERISE PAR UN CONTROLE SEPARE DE LA DENSITE ET DE L'ENERGIE DES ESPECES GAZEUSES PERMET DE REDUIRE L'ENERGIE DES IONS INCIDENTS. AINSI, NOUS AVONS REALISE DES HEMT PERFORMANTS PRESENTANT DE FAIBLES COURANTS DE FUITE ET UNE TENSION DE CLAQUAGE DE GRILLE ELEVEE
Author: M. Sugawara Publisher: OUP Oxford ISBN: 0191590290 Category : Technology & Engineering Languages : en Pages : 362
Book Description
The focus of this book is the remarkable advances in understanding of low pressure RF (radio frequency) glow discharges. A basic analytical theory and plasma physics are explained. Plasma diagnostics are also covered before the practicalities of etcher use are explored.
Author: R.J. Shul Publisher: Springer Science & Business Media ISBN: 3642569897 Category : Technology & Engineering Languages : en Pages : 664
Book Description
Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.
Author: A.J. van Roosmalen Publisher: Springer Science & Business Media ISBN: 148992566X Category : Science Languages : en Pages : 247
Book Description
This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.
Author: Russ A. Morgan Publisher: North-Holland ISBN: 9780444424198 Category : Science Languages : en Pages : 316
Book Description
Hardbound. This book is based on a post-graduate study carried out by the author on plasma etching mechanisms of semiconductor materials such as silicon, silicon dioxide, photoresist and aluminium films used in integrated circuit fabrication. In this book he gives an extensive review of the chemistry of dry etching, sustaining mechanisms and reactor architecture. He also describes a study made on the measurement of the electrical characteristics and ionization conditions existing in a planar reactor. In addition, practical problems such as photoresist mask erosion have been investigated and the reader will find the photoresist chemistry very useful. The book contains a great deal of practical information on plasma etching processes. The electronics industry is continually seeking ways to improve the miniaturization of devices, and this account of the author's findings should be a useful contribution to the work of miniaturization.
Author: MOHAND.. ACHOUCHE
Author: MOHAND.. ACHOUCHE
Author: M. Sugawara
Author: 
Author: R.J. Shul
Author: Dennis M. Manos
Author: 
Author: Yuan Xiong Li
Author: A.J. van Roosmalen
Author: 
Author: Russ A. Morgan