Grain Boundary Structure and Properties in Polycrystalline Silicon PDF Download

Author: Y. Simon Tsuo
Publisher:
ISBN:
Category : Grain boundaries
Languages : en
Pages : 6

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Book Description
Recent advances in studying the grain boundary properties of polycrystalline silicon solar cell materials are reviewed. Of particular importance are the recent improvements in hydrogen grain boundary passivation techniques that have not only shortened the required passivation treatment time to only a few minutes but also demonstrated the ability to significantly increase polycrystalline silicon solar cell efficiencies for both large-grained and small-grained materials.

Author: Hans J. Möller
Publisher: Springer Science & Business Media
ISBN: 3642934137
Category : Technology & Engineering
Languages : en
Pages : 399

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Book Description
This book summarizes the most recent aspects of polycrystalline semiconductors as presented at the conference Polycrystalline Semiconductors - Grain Boundaries and Interfaces. It contains 12 review articles on selected topics written by experts in their fields and 41 complementary contributed papers. The structure, chemistry and physics of grain boundaries and other interfaces are experimentally and theoretically studied. Aspects of the technologically important polycrystalline silicon are discussed in detail. Also covered are other polycrystalline semiconductors, germanium and compound semiconductors, that are currently of interest in fundamental research and in the technology of solar cells and thin film devices. Anyone interested in polycrystalline semiconductors will be able to use this comprehensive collection to advantage. It also suggests directions for new research and development.

Author: Phillip Eugene Russell
Publisher:
ISBN:
Category : Grain boundaries
Languages : en
Pages : 360

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Book Description
Experimental techniques for the investigation of the electrical and chemical properties of grain boundaries are developed and utilized for the study of cast polycrystalline silicon. Totally automated electron beam induced current (E3IC) techniques are developed, including hardware and software development, and are used for the study of recombination properties of silicon grain boundaries. Automation was used to maximize the precision and accuracy of the E3IC data and to allow large numbers of measurements to be performed to determine the effects of experimental parameters on reproducibility and beam damage. EBIC, secondary electron and optical microscopy techniques are used to characterize the grain size and structure in Wacker Silso cast polycrystalline silicon. The grain size is found to be 1.63 +/- 0.43 millimeters. Grain structure was found to be controlled by the casting process used to form the material. Twin boundaries are found to be electrically inactive. Preferential grain boundary diffusion of phosphorus in silicon grain boundaries is measured using both bevel and stain, and bevel/E3IC techniques. The effects of heat treatments at 600, 750 and 900°C are investigated extensively. An MIS device structure which does not require high temperature processing (>200°C) for fabrication is developed and utilized for these studies. EBIC analysis results show Chat grain boundary recombination velocity is substantially increased by heating cast polysilicon to temperatures as low as 60C°C, whereas no effects were seen at AOCC. Heat treatments up to 900°C are investigated. Use of complementary surface analysis techniques are developed which show that these heat treatments result in oxygen segregation to grain boundaries. ln-situ fracturing techniques for Auger electron spectroscopy and secondary ion mass spectroscopy analysis of grain boundaries?.re developed. Ton microscopy techniques are developed and used to complement the fracture studies. Local oxygen concentrations of 0.1 atomic % were measured. Eased on the time and temperature dependence of the activation of grain boundary recombination, it is concluded Chat oxygen segregation is responsible for Che activation.

Author: Deren Yang
Publisher: Springer
ISBN: 9783662564714
Category : Technology & Engineering
Languages : en
Pages : 0

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Book Description
The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..

Author: Phillip Eugene Russell
Publisher: Nabu Press
ISBN: 9781289778880
Category :
Languages : en
Pages : 190

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Book Description
This is a reproduction of a book published before 1923. This book may have occasional imperfections such as missing or blurred pages, poor pictures, errant marks, etc. that were either part of the original artifact, or were introduced by the scanning process. We believe this work is culturally important, and despite the imperfections, have elected to bring it back into print as part of our continuing commitment to the preservation of printed works worldwide. We appreciate your understanding of the imperfections in the preservation process, and hope you enjoy this valuable book.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description
Research in 1980/81 was carried out in three areas: (i) electron diffraction experiments on diffusion bonded (welded) boundaries; (ii) combined EBIC and high voltage transmission electron microscopy in order to investigate the correlation between structure and electrical properties and (iii) passivation of the electrical activity of crystal defects with hydrogen. The diffraction experiments did not furnish new information on the structure of grain boundaries in silicon, but were valuable as a check on the previous findings. In addition, they offered the possibility to separate double diffraction effects from boundary scattering. The combined EBIC and HVTEM experiments established (for the first time) unambiguously that coherent twin boundaries per se are not electrically active. The localized electrical activity observed in coherent twin boundaries is due to the presence of intrinsic dislocations, which are partial dislocations of the Schottky type. However, not all partial dislocations studied were electrically active, for reasons which are not completely understood. The combined EBIC and HVTEM investigations showed further (again for the first time) that many of the linear boundaries which were previously assumed to be coherent twin boundaries are second order twins, and that these twins are strongly electrically active. In passivation experiments, it is necessary to separate influence of the heat treatment from those of hydrogen. Passivation reduces the activity of some, but not of all defects. Passivation is particularly effective in reducing the electrical activity of deformation induced dislocations, which conceivably have a different core structure from grown-in dislocations.

Author: Pavel Lejcek
Publisher: Springer Science & Business Media
ISBN: 3642125050
Category : Technology & Engineering
Languages : en
Pages : 249

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Book Description
Grain boundaries are important structural components of polycrystalline materials used in the vast majority of technical applications. Because grain boundaries form a continuous network throughout such materials, their properties may limit their practical use. One of the serious phenomena which evoke these limitations is the grain boundary segregation of impurities. It results in the loss of grain boundary cohesion and consequently, in brittle fracture of the materials. The current book deals with fundamentals of grain boundary segregation in metallic materials and its relationship to the grain boundary structure, classification and other materials properties.

Author: Robert Hull
Publisher: IET
ISBN: 9780852969335
Category : Electronic books
Languages : en
Pages : 1054

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Book Description
A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.

Author: Ted Kamins
Publisher: Springer Science & Business Media
ISBN: 1461555779
Category : Technology & Engineering
Languages : en
Pages : 391

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Book Description
Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.

Author: Louisette Priester
Publisher: Springer Science & Business Media
ISBN: 9400749694
Category : Technology & Engineering
Languages : en
Pages : 458

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Book Description
Grain boundaries are a main feature of crystalline materials. They play a key role in determining the properties of materials, especially when grain size decreases and even more so with the current improvements of processing tools and methods that allow us to control various elements in a polycrystal. This book presents the theoretical basis of the study of grain boundaries and aims to open up new lines of research in this area. The treatment is light on mathematical approaches while emphasizing practical examples; the issues they raise are discussed with reference to theories. The general approach of the book has two main goals: to lead the reader from the concept of ‘ideal’ to ‘real’ grain boundaries; to depart from established knowledge and address the opportunities emerging through "grain boundary engineering", the control of morphological and crystallographic features that affect material properties. The book is divided in three parts: I ‘From interganular order to disorder’ deals with the concept of the perfect grain boundary, at equilibrium, and questions the maintenance of its crystalline state. II ‘From the ideal to the real grain boundary’ deals with the concept of the faulted grain boundary. It attempts to reveal the influence of the grain boundary structure on its defects, their formation and their accommodation. III ‘From free to constrained grain boundaries’ is devoted to grain boundary ensembles starting from the triple junction (the elemental configuration) to real grain boundary networks in polycrystals This part covers a new and topical development in the field. It presents for the first time an avenue for researchers working on macroscopic aspects, to approach the scale of description of grain boundaries. Audience: graduate students, researchers and engineers in Materials Science and all those scientists pursuing grain boundary engineering in order to improve materials performance.