Author: Chinmay Kumar Maiti
Publisher: World Scientific
ISBN: 9814713090
Category : Technology & Engineering
Languages : en
Pages : 465
Book Description
Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools.Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text.
Computer Aided Design Of Micro- And Nanoelectronic Devices
Author: Chinmay Kumar Maiti
Publisher: World Scientific
ISBN: 9814713090
Category : Technology & Engineering
Languages : en
Pages : 465
Book Description
Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools.Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text.
Publisher: World Scientific
ISBN: 9814713090
Category : Technology & Engineering
Languages : en
Pages : 465
Book Description
Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools.Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text.
Tunnel Field-effect Transistors (TFET)
Author: Jagadesh Kumar Mamidala
Publisher: John Wiley & Sons
ISBN: 111924630X
Category : Technology & Engineering
Languages : en
Pages : 208
Book Description
Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.
Publisher: John Wiley & Sons
ISBN: 111924630X
Category : Technology & Engineering
Languages : en
Pages : 208
Book Description
Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.
Fundamentals of Tunnel Field-Effect Transistors
Author: Sneh Saurabh
Publisher: CRC Press
ISBN: 1315350262
Category : Science
Languages : en
Pages : 216
Book Description
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Publisher: CRC Press
ISBN: 1315350262
Category : Science
Languages : en
Pages : 216
Book Description
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Device Electronics for Integrated Circuits
Author: Richard S. Muller
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 560
Book Description
This Second Edition provides all the required information for a course in modern device electronics taken by undergraduate electrical engineers. Offers major new coverage of silicon technology, adds several topics in basic semiconductor physics not treated previously, and introduces Hall-effect sensors. The chapters on MOSFET have been entirely updated, focusing on mobility variations and threshold-voltage dependence. Additional topics include VLSI devices, short channel effects, and computer modeling.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 560
Book Description
This Second Edition provides all the required information for a course in modern device electronics taken by undergraduate electrical engineers. Offers major new coverage of silicon technology, adds several topics in basic semiconductor physics not treated previously, and introduces Hall-effect sensors. The chapters on MOSFET have been entirely updated, focusing on mobility variations and threshold-voltage dependence. Additional topics include VLSI devices, short channel effects, and computer modeling.
Tunneling Field Effect Transistors
Author: T. S. Arun Samuel
Publisher: CRC Press
ISBN: 1000877825
Category : Technology & Engineering
Languages : en
Pages : 326
Book Description
This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications. Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon. The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.
Publisher: CRC Press
ISBN: 1000877825
Category : Technology & Engineering
Languages : en
Pages : 326
Book Description
This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications. Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon. The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.
Nanoscale Semiconductors
Author: Balwinder Raj
Publisher: CRC Press
ISBN: 1000637506
Category : Technology & Engineering
Languages : en
Pages : 259
Book Description
This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design. The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design. The book discusses nanoscale semiconductor materials, device models, and circuit design covers nanoscale semiconductor device structures and modeling discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire covers power dissipation and reduction techniques Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.
Publisher: CRC Press
ISBN: 1000637506
Category : Technology & Engineering
Languages : en
Pages : 259
Book Description
This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design. The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design. The book discusses nanoscale semiconductor materials, device models, and circuit design covers nanoscale semiconductor device structures and modeling discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire covers power dissipation and reduction techniques Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.
CHIPS 2020 VOL. 2
Author: Bernd Höfflinger
Publisher: Springer
ISBN: 3319220934
Category : Science
Languages : en
Pages : 342
Book Description
The release of this second volume of CHIPS 2020 coincides with the 50th anniversary of Moore’s Law, a critical year marked by the end of the nanometer roadmap and by a significantly reduced annual rise in chip performance. At the same time, we are witnessing a data explosion in the Internet, which is consuming 40% more electrical power every year, leading to fears of a major blackout of the Internet by 2020. The messages of the first CHIPS 2020, published in 2012, concerned the realization of quantum steps for improving the energy efficiency of all chip functions. With this second volume, we review these messages and amplify upon the most promising directions: ultra-low-voltage electronics, nanoscale monolithic 3D integration, relevant-data, brain- and human-vision-inspired processing, and energy harvesting for chip autonomy. The team of authors, enlarged by more world leaders in low-power, monolithic 3D, video, and Silicon brains, presents new vistas in nanoelectronics, promising Moore-like exponential growth sustainable through to the 2030s.
Publisher: Springer
ISBN: 3319220934
Category : Science
Languages : en
Pages : 342
Book Description
The release of this second volume of CHIPS 2020 coincides with the 50th anniversary of Moore’s Law, a critical year marked by the end of the nanometer roadmap and by a significantly reduced annual rise in chip performance. At the same time, we are witnessing a data explosion in the Internet, which is consuming 40% more electrical power every year, leading to fears of a major blackout of the Internet by 2020. The messages of the first CHIPS 2020, published in 2012, concerned the realization of quantum steps for improving the energy efficiency of all chip functions. With this second volume, we review these messages and amplify upon the most promising directions: ultra-low-voltage electronics, nanoscale monolithic 3D integration, relevant-data, brain- and human-vision-inspired processing, and energy harvesting for chip autonomy. The team of authors, enlarged by more world leaders in low-power, monolithic 3D, video, and Silicon brains, presents new vistas in nanoelectronics, promising Moore-like exponential growth sustainable through to the 2030s.
Energy Efficient Computing & Electronics
Author: Santosh K. Kurinec
Publisher: CRC Press
ISBN: 1351779869
Category : Computers
Languages : en
Pages : 452
Book Description
In our abundant computing infrastructure, performance improvements across most all application spaces are now severely limited by the energy dissipation involved in processing, storing, and moving data. The exponential increase in the volume of data to be handled by our computational infrastructure is driven in large part by unstructured data from countless sources. This book explores revolutionary device concepts, associated circuits, and architectures that will greatly extend the practical engineering limits of energy-efficient computation from device to circuit to system level. With chapters written by international experts in their corresponding field, the text investigates new approaches to lower energy requirements in computing. Features • Has a comprehensive coverage of various technologies • Written by international experts in their corresponding field • Covers revolutionary concepts at the device, circuit, and system levels
Publisher: CRC Press
ISBN: 1351779869
Category : Computers
Languages : en
Pages : 452
Book Description
In our abundant computing infrastructure, performance improvements across most all application spaces are now severely limited by the energy dissipation involved in processing, storing, and moving data. The exponential increase in the volume of data to be handled by our computational infrastructure is driven in large part by unstructured data from countless sources. This book explores revolutionary device concepts, associated circuits, and architectures that will greatly extend the practical engineering limits of energy-efficient computation from device to circuit to system level. With chapters written by international experts in their corresponding field, the text investigates new approaches to lower energy requirements in computing. Features • Has a comprehensive coverage of various technologies • Written by international experts in their corresponding field • Covers revolutionary concepts at the device, circuit, and system levels
Tunneling Field Effect Transistor Technology
Author: Lining Zhang
Publisher: Springer
ISBN: 3319316532
Category : Technology & Engineering
Languages : en
Pages : 217
Book Description
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Publisher: Springer
ISBN: 3319316532
Category : Technology & Engineering
Languages : en
Pages : 217
Book Description
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Proceedings of International Conference on Recent Advancement on Computer and Communication
Author: Basant Tiwari
Publisher: Springer
ISBN: 9811081980
Category : Technology & Engineering
Languages : en
Pages : 657
Book Description
The book is a compilation of best papers presented at International Conference on Recent Advancement in Computer and Communication (ICRAC 2017) organized by IMPLab Research and Innovation Foundation, Bhopal, India. The book covers all aspects of computers and communication techniques including pervasive computing, distributed computing, cloud computing, sensor and adhoc network, image, text and speech processing, pattern recognition and pattern analysis, digital signal processing, digital electronics, telecommunication technologies, robotics, VLSI technologies, embedded system, satellite communication, digital signal processing, and digital communication. The papers included are original research works of experts from industry, government centers and academic institutions; experienced in engineering, design and research.
Publisher: Springer
ISBN: 9811081980
Category : Technology & Engineering
Languages : en
Pages : 657
Book Description
The book is a compilation of best papers presented at International Conference on Recent Advancement in Computer and Communication (ICRAC 2017) organized by IMPLab Research and Innovation Foundation, Bhopal, India. The book covers all aspects of computers and communication techniques including pervasive computing, distributed computing, cloud computing, sensor and adhoc network, image, text and speech processing, pattern recognition and pattern analysis, digital signal processing, digital electronics, telecommunication technologies, robotics, VLSI technologies, embedded system, satellite communication, digital signal processing, and digital communication. The papers included are original research works of experts from industry, government centers and academic institutions; experienced in engineering, design and research.