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Author: Todd D. Steiner Publisher: Artech House ISBN: 9781580537520 Category : Technology & Engineering Languages : en Pages : 438
Book Description
Annotation Tiny structures measurable on the nanometer scale (one-billionth of a meter) are known as nanostructures, and nanotechnology is the emerging application of these nanostructures into useful nanoscale devices. As we enter the 21st century, more and more professional are using nanotechnology to create semiconductors for a variety of applications, including communications, information technology, medical, and transportation devices. Written by today's best researchers of semiconductor nanostructures, this cutting-edge resource provides a snapshot of this exciting and fast-changing field. The book covers the latest advances in nanotechnology and discusses the applications of nanostructures to optoelectronics, photonics, and electronics.
Author: Todd D. Steiner Publisher: Artech House ISBN: 9781580537520 Category : Technology & Engineering Languages : en Pages : 438
Book Description
Annotation Tiny structures measurable on the nanometer scale (one-billionth of a meter) are known as nanostructures, and nanotechnology is the emerging application of these nanostructures into useful nanoscale devices. As we enter the 21st century, more and more professional are using nanotechnology to create semiconductors for a variety of applications, including communications, information technology, medical, and transportation devices. Written by today's best researchers of semiconductor nanostructures, this cutting-edge resource provides a snapshot of this exciting and fast-changing field. The book covers the latest advances in nanotechnology and discusses the applications of nanostructures to optoelectronics, photonics, and electronics.
Author: Y. Shiraki Publisher: Elsevier ISBN: 0857091425 Category : Technology & Engineering Languages : en Pages : 649
Book Description
Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Author: Mustafa M. Amin Publisher: Springer Nature ISBN: 9464633107 Category : Medical Languages : en Pages : 233
Book Description
This is an open access book. Homeostasis is upset by stress, which also triggers an adaptive reaction that shields an organism from harm. High allostatic load, on the other hand, might result from excessive stress or stress during a sensitive time, which eventually promotes or hastens maladaptive processes. Adverse childhood experiences, often known as ACEs, are early life stresses that individuals endure and are linked to the development of behavioural abnormalities and psychiatric problems in adulthood. Furthermore, there is evidence that people with early life stress have a more severe illness course and are less receptive to treatment for mood and anxiety disorders like depression. Stress throughout early childhood is linked to a modification of the brain's developmental trajectory, which can result in long-lasting behavioural alterations, but the consequences of stress in adulthood can be temporary and reversible. Behaviour problems brought on by ELS exposure can start in adulthood or during childhood or adolescence. A developing field of research, neuroscience, is expanding quickly. Neurology, psychiatry, and psychology are necessary for a deeper understanding of it. The purpose of this conference is to inform attendees of the most recent developments in the field of neuroscience education. The Faculty of Medicine at Universitas Sumatera Utara is hosting the 6th International Conference on Neuroscience, Neurology, and Psychiatry (ICoNaP) 2023 with the theme "The impact of early life stress on the neuroscience field" for psychiatrists, neurologists, general practitioners, and other interested specialists. Since 2018, ICoNAP has occurred annually. Speakers from many different nations are invited to the conference, both nationally and internationally. The committee has elected speakers from Malaysia, Singapore, Germany, Australia, India, Thailand, the United States, France, and Malaysia over the years. This year's conference will be hosted virtually and will have speakers from Singapore, Malaysia, the United Kingdom, Japan, Australia, and Singapore. Researchers and specialists in the fields of neuroscience, neurology, and psychiatry can exchange ideas, experiences, and insights during the conference. Case studies and articles will have the opportunity to be published in international publications, and 920 researchers and professionals have so far taken part in previous ICoNAPs. More than 100 articles and case studies have also been released.
Author: Gyu-Chul Yi Publisher: Springer Science & Business Media ISBN: 3642224806 Category : Technology & Engineering Languages : en Pages : 347
Book Description
This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.
Author: Klaus D. Sattler Publisher: CRC Press ISBN: 1351260553 Category : Science Languages : en Pages : 4153
Book Description
This 21st Century Nanoscience Handbook will be the most comprehensive, up-to-date large reference work for the field of nanoscience. Handbook of Nanophysics, by the same editor, published in the fall of 2010, was embraced as the first comprehensive reference to consider both fundamental and applied aspects of nanophysics. This follow-up project has been conceived as a necessary expansion and full update that considers the significant advances made in the field since 2010. It goes well beyond the physics as warranted by recent developments in the field. Key Features: Provides the most comprehensive, up-to-date large reference work for the field. Chapters written by international experts in the field. Emphasises presentation and real results and applications. This handbook distinguishes itself from other works by its breadth of coverage, readability and timely topics. The intended readership is very broad, from students and instructors to engineers, physicists, chemists, biologists, biomedical researchers, industry professionals, governmental scientists, and others whose work is impacted by nanotechnology. It will be an indispensable resource in academic, government, and industry libraries worldwide. The fields impacted by nanoscience extend from materials science and engineering to biotechnology, biomedical engineering, medicine, electrical engineering, pharmaceutical science, computer technology, aerospace engineering, mechanical engineering, food science, and beyond.
Author: John D. Cressler Publisher: CRC Press ISBN: 1420066919 Category : Technology & Engineering Languages : en Pages : 468
Book Description
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.
Author: John D. Cressler Publisher: CRC Press ISBN: 1420026585 Category : Technology & Engineering Languages : en Pages : 1249
Book Description
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
Author: Alexei Nazarov Publisher: Springer ISBN: 3319088041 Category : Technology & Engineering Languages : en Pages : 464
Book Description
This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.
Author: Viktor Evgen?evich Borisenko Publisher: World Scientific ISBN: 9812796738 Category : Science Languages : en Pages : 597
Book Description
This book contains invited review papers and short notes presented at the International Conference on Physics, Chemistry and Application of Nanostructures (Nanomeeting 2003). Contents: Physics of Nanostructures: Si/SiGe Nanostructures: Challenges and Future Perspectives (D Grtzmacher); Spin-Resolved Inverse Photoemission from Layered Magnetic Nanostructures (R Bertacco et al.); Nonlinear Optical Properties of One-Dimensional Photonic Crystals (C Sibilia et al.); Tunable Three-Dimensional Photonic Crystals Based on Opal-VO 2 Composites (V G Golubev); Interband Transitions in Si Nanostructures Within Effective Mass Approximation (X Zianni & A G Nassiopoulou); Chemistry of Nanostructures: Nanocluster Superlattices Grown at Solution Surfaces (S Sato et al.); Excitonics of IOCoVII Semiconductors (C S Sunandana); Nanotechnology: Mechanisms of Island Vertical Alignment in Ge/Si(001) Quantum-Dot Multilayers (V Le Thanh); Enhanced Luminescene of Lanthanides from Xerogels in Porous Anodic Alumina (N V Gaponenko); Advanced Scanning Probes as Applied to Self Organized Organic Systems (H Fuchs); Nanostructure Based Devices: InGaN/GaN Quantum Wells: Fabrication, Optical Properties and Application in Light Emitting Devices (G P Yablonskii); Carbon Nanotubes in Microelectronic Applications (F Kreupl et al.); Quantum-Confined Impurities as Single-Atom Quantum Dots: Application to Terahertz Emitters (P Harrison et al.); and other papers. Readership: PhD students, academics, researchers and industrialists in nanotechnology."
Author: Todd D. Steiner
Author: Todd D. Steiner
Author: Y. Shiraki
Author: Mustafa M. Amin
Author: D. N. Buckley
Author: Gyu-Chul Yi
Author: Klaus D. Sattler
Author: John D. Cressler
Author: John D. Cressler
Author: Alexei Nazarov
Author: Viktor Evgen?evich Borisenko