Author: John E. NorthrupPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 912
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
GaN and Related Alloys - 2001: Volume 693
Author: John E. NorthrupPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 912
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
GaN and Related Alloys
Author: Publisher:
ISBN:
Category : Electroluminescent devices
Languages : en
Pages : 960
Book Description
Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices
Author: Hadis MorkoçPublisher: John Wiley & Sons
ISBN: 3527628452
Category : Technology & Engineering
Languages : en
Pages : 902
Book Description
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.
Infrared Ellipsometry on Semiconductor Layer Structures
Author: Mathias SchubertPublisher: Springer Science & Business Media
ISBN: 9783540232490
Category : Science
Languages : en
Pages : 216
Book Description
The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry examination. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects. A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and future applications such as organic layer structures and highly correlated electron systems are proposed.
Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides
Author: Hadis MorkoçPublisher: John Wiley & Sons
ISBN: 3527628428
Category : Technology & Engineering
Languages : en
Pages : 883
Book Description
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.
Materials for Energy Storage, Generation and Transport: Volume 730
Author: Ricardo B. SchwarzPublisher:
ISBN:
Category : Science
Languages : en
Pages : 256
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Advances in Liquid Crystalline Materials and Technologies: Volume 709
Author: Patrick T. MatherPublisher:
ISBN:
Category : Science
Languages : en
Pages : 328
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Organic/inorganic Hybrid Materials
Author: Defect and Impurity Engineered Semiconductors and Devices III: Volume 719
Author: S. AshokPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 522
Book Description
This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
Progress in Semiconductor Materials for Optoelectronic Applications: Volume 692
Author: Eric D. JonesPublisher:
ISBN:
Category : Science
Languages : en
Pages : 768
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.