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Author: Ghulum Bakiri Publisher: ISBN: Category : Organogallium compounds Languages : en Pages : 242
Book Description
An experimental Ionized Cluster Beam System similar in design to the one developed at Kyoto University in Japan was. designed and constructed in the Microelectronics Laboratory at NJIT. This involved making the working drawings, having the parts machined and then assembling the system in a vacuum system together with the necessary variable power supplies, meters, controls, gas inlets, cooling water connections, etc. Eleven deposition runs were then attempted to grow gallium nitride utilizing the system constructed. In a typical deposition run, gallium was vaporized from a boron nitride crucible at 1000° C and allowed to expand through a 0.5 mm nozzle into a low pressure region containing nitrogen at 1-5 X 10−4 torr in order to form clusters of about 1000 atoms each. The gallium clusters were ionized by an electron source (300 mA) and deposited on heated quartz substrates (550° C) for reactive growth with nitrogen. For the above deposition conditions, the film growth rate was only 1 A°/min and the films were highly insulating. Photoluminescence measurements and surface analysis of the grown films revealed boron contaimination which was then traced to water vapor contamination of the boron nitride crucible and heater. The water vapor if not driven out by pre-heating the crucible in an oven, caused the boron nitride to decompose at elevated temperatures introducing reactive contaminants at the substrate surface. Further experiments showed that for GaN deposition rates greater, than 1 A° /min (and up to 1 A° /sec) 0 the crucible temperature should be at least 1100° C but preferably around 1400° C.
Author: Ghulum Bakiri Publisher: ISBN: Category : Organogallium compounds Languages : en Pages : 242
Book Description
An experimental Ionized Cluster Beam System similar in design to the one developed at Kyoto University in Japan was. designed and constructed in the Microelectronics Laboratory at NJIT. This involved making the working drawings, having the parts machined and then assembling the system in a vacuum system together with the necessary variable power supplies, meters, controls, gas inlets, cooling water connections, etc. Eleven deposition runs were then attempted to grow gallium nitride utilizing the system constructed. In a typical deposition run, gallium was vaporized from a boron nitride crucible at 1000° C and allowed to expand through a 0.5 mm nozzle into a low pressure region containing nitrogen at 1-5 X 10−4 torr in order to form clusters of about 1000 atoms each. The gallium clusters were ionized by an electron source (300 mA) and deposited on heated quartz substrates (550° C) for reactive growth with nitrogen. For the above deposition conditions, the film growth rate was only 1 A°/min and the films were highly insulating. Photoluminescence measurements and surface analysis of the grown films revealed boron contaimination which was then traced to water vapor contamination of the boron nitride crucible and heater. The water vapor if not driven out by pre-heating the crucible in an oven, caused the boron nitride to decompose at elevated temperatures introducing reactive contaminants at the substrate surface. Further experiments showed that for GaN deposition rates greater, than 1 A° /min (and up to 1 A° /sec) 0 the crucible temperature should be at least 1100° C but preferably around 1400° C.
Author: Wade H. Shafer Publisher: Springer Science & Business Media ISBN: 1468449192 Category : Science Languages : en Pages : 314
Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1 957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 28 (thesis year 1 983) a total of 10,661 theses titles from 26 Canadian and 197 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 28 reports theses submitted in-1983, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Author: R. Freer Publisher: Springer Science & Business Media ISBN: 9400921012 Category : Technology & Engineering Languages : en Pages : 716
Book Description
Carbides, nitrides and borides are families of related refractory materials. Traditionally they have been employed in applications associated with engineering ceramics where either high temperature strength or stability is of primary importance. In recent years there has been a growing awareness of the interesting electrical, thermal and optical properties exhibited by these materials, and the fact that many can be prepared as monolithic ceramics, single crystals and thin films. In practical terms carbides, nitrides and borides offer the prospect of a new generation of semiconductor materials, for example, which can function at very high temperatures in severe environmental conditions. However, as yet, we have only a limited understanding of the detailed physics and chemistry of the materials and how the preparation techniques influence the properties. Under the auspices of the NATO Science Committee an Advanced Research Workshop (ARW) was held on the Physics and Chemistry of Carbides, Nitrides and Borides (University of Manchester, 18-22 September, 1989) in order to assess progress to date and identify the most promising themes and materials for future research. An international group of 38 scientists considered developments in 5 main areas: The preparation of powders, monolithic ceramics, single crystals and thin films; Phase transformations, microstructure, defect structure and mass transport; Materials stability; Theoretical studies; Electrical, thermal and optical properties of bulk materials and thin films.
Author: C.G. Van de Walle Publisher: Elsevier ISBN: 0444599177 Category : Science Languages : en Pages : 635
Book Description
Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.
Author: E. Kasper Publisher: CRC Press ISBN: 1351093525 Category : Technology & Engineering Languages : en Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: Ghulum Bakiri
Author: Ghulum Bakiri
Author: Martin James Fornek
Author: Wade H. Shafer
Author: Dave Turner
Author: R. Freer
Author: Syed Ejazul Huq
Author: C.G. Van de Walle
Author: E. Kasper
Author: 
Author: