Author: K. ShenaiPublisher: The Electrochemical Society
ISBN: 1607685442
Category :
Languages : en
Pages : 312
Book Description
Gallium Nitride and Silicon Carbide Power Technologies 4
Author: K. ShenaiPublisher: The Electrochemical Society
ISBN: 1607685442
Category :
Languages : en
Pages : 312
Book Description
Gallium Nitride And Silicon Carbide Power Devices
Author: B Jayant BaligaPublisher: World Scientific Publishing Company
ISBN: 9813109424
Category : Technology & Engineering
Languages : en
Pages : 592
Book Description
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Gallium Nitride and Silicon Carbide Power Technologies
Author: K. ShenaiPublisher: The Electrochemical Society
ISBN: 1607682621
Category :
Languages : en
Pages : 361
Book Description
Gallium Nitride and Silicon Carbide Power Technologies 7
Author: M. DudleyPublisher: The Electrochemical Society
ISBN: 1607688247
Category :
Languages : en
Pages : 297
Book Description
Gallium Nitride and Silicon Carbide Power Technologies 8
Author: M. DudleyPublisher: The Electrochemical Society
ISBN: 160768859X
Category : Science
Languages : en
Pages : 122
Book Description
GaN & SiC Power Technologies 5
Author: K. ShenaiPublisher: The Electrochemical Society
ISBN: 1607686767
Category :
Languages : en
Pages : 144
Book Description
Wide Bandgap Semiconductor Power Devices
Author: B. Jayant BaligaPublisher: Woodhead Publishing
ISBN: 0081023073
Category : Technology & Engineering
Languages : en
Pages : 420
Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
GaN Transistors for Efficient Power Conversion
Author: Alex LidowPublisher: John Wiley & Sons
ISBN: 1119594421
Category : Science
Languages : en
Pages : 518
Book Description
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Handbook of GaN Semiconductor Materials and Devices
Author: Wengang (Wayne) BiPublisher: CRC Press
ISBN: 1498747140
Category : Science
Languages : en
Pages : 709
Book Description
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
SiC Technology
Author: Maurizio Di Paolo EmilioPublisher: Springer Nature
ISBN: 3031634187
Category :
Languages : en
Pages : 317
Book Description