Author: Dietrich W. VookPublisher:
ISBN:
Category :
Languages : en
Pages : 212
Book Description
Gallium-arsenide Metalorganic Chemical Vapor Deposition with Alkyl Arsenic Sources
Author: Dietrich W. VookMetalorganic Chemical Vapor Deposition (MOCVD) of GaAs Using Organometallic Arsenic Precursors
Author: Thomas Robert OmsteadPublisher:
ISBN:
Category :
Languages : en
Pages : 358
Book Description
The metal organic-chemical vapor deposition of gallium arsenide thin films on silicon and gallium arsenide substrates
Author: Christopher ThomasPublisher:
ISBN:
Category : Metallic films
Languages : en
Pages : 172
Book Description
Low-pressure Metalorganic Chemical Vapor Deposition of GaAs on GaAs Substrate Using Triethylgallium and Solid Arsenic as Precursors
Author: Chao-Chi TongPublisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 182
Book Description
Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition
Author: Vilnis Guntis KreismanisPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 352
Book Description
A Computational Model of the Metalorganic Chemical Vapor Deposition of Gallium Arsenide
Author: Rena Michelle ZurnOrganometallic Chemical Vapor Deposition of GaAs
Author: Peter Wai-Man LeeMetalorganic Chemical Vapor Deposition of Gallium Arsenide/aluminum Gallium Arsenide Thin-layer Superlattices and Laser Structures
Author: Gregory CostriniPublisher:
ISBN:
Category : Metal vapor lasers
Languages : en
Pages : 196
Book Description
Metalorganic Chemical Vapor Deposition of Gallium-Arsenide/aluminum-Gallium - Arsenide Thin-Layer Superlattices Andlaser Structures
Author: Gallium Arsenide Materials Growth and Processing
Author: D. W. ShawPublisher:
ISBN:
Category :
Languages : en
Pages : 15
Book Description
Continuous, in situ rate measurements were employed to evaluate the influence of gas phase supersaturation on the gallium arsenide epitaxial growth kinetics relative to the extent of heterogeneous nucleation and extraneous deposition on fused silica. The resulting kinetic data permit establishment of the optimum conditions for selective epitaxial growth of gallium arsenide at subnormal temperatures using the classic gallium/arsenic trichloride/hydrogen chemical vapor deposition process. Specifically, the extent of extraneous deposition is minimized through the use of low arsenic partial pressures entering the source region or through the use of small source surface areas.