Author: Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 396
Book Description
Gallium Arsenide Materials and Devices and the Gunn Effect
Author: Communications Research Centre (Canada)Publisher:
ISBN:
Category :
Languages : en
Pages : 100
Book Description
Gallium Arsenide Materials and Devices and the Gunn Effect
Author: Communications Research Centre (Canada)Publisher:
ISBN:
Category : Gallium compounds
Languages : en
Pages : 123
Book Description
Gallium Arsenide Microwave Bulk and Transit-time Devices
Author: Lester F. EastmanPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 296
Book Description
Gallium Arsenide
Author: M. J. HowesPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 608
Book Description
This is the seventh volume in the Wiley Series in Solid State Devices and Circuits, and deals comprehensively with the use of gallium arsenide for high frequency and high speed circuits.
Gallium Arsenide for Devices and Integrated Circuits
Author: Hugh ThomasPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 400
Book Description
Gallium Arsenide
Author: Ernest Benn LimitedPublisher:
ISBN: 9780904705522
Category : Gallium arsenide semiconductors
Languages : en
Pages : 104
Book Description
Investigation of the Gunn Effect in Gallium Arsenide
Author: Alois Allen SlepickaPublisher:
ISBN:
Category : Electronics
Languages : en
Pages : 78
Book Description
The Gunn effect is a recently (1963) observed phenomenon in the electrical properties of certain compound semiconductors. It is characterized by a sudden onset of oscillations in current through the material when a critical value of electric field is exceeded. The oscillations are not greatly affected by external circuit conditions, are at microwave frequencies, and occur as a bulk property at room temperature in gallium arsenide and certain other materials with the proper conduction band structure. The intervalley transfer of electrons in the conduction band from a lower energy high mobility sub-band, to a higher energy low mobility sub-band with the application of an increasing electric field gives rise to a negative differential resistance in the material. It is this mechanism which is accepted as the cause of the instabilities. A brief theoretical explanation is given. The preparation of samples of gallium arsenide is described and discussed. Sample mounting is described, and the results of various tests reported. The value of the effect lies in the ability to directly convert pulse of DC power into microwave power at usable levels and at reasonable efficiencies. (Author).
GUNN EFFECT DEVICES.
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 26
Book Description
Excellent quality solution-grown gallium arsenide is being routinely produced by a transient growth technique. Controlled doping has been achieved with a doping profile of less than 10% over typical device lengths. A steady state growth system is now in operation to produce even better controlled gallium arsenide material with little or no doping profile. Device geometry optimization is continuing with increasing improvement in low sample temperature rise, power output, efficiency, and FM noise. Sample FM noise is consistently low with levels of a few cycles at 10 KHz from the carrier (6-13 GHz) in a 200 Hz bandwidth and for relatively low Q's of around 200. (Author).
Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA
Author: Gerald B. StringfellowPublisher: CRC Press
ISBN: 1000157067
Category : Science
Languages : en
Pages : 696
Book Description
Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany
Author: Günter WeimannPublisher: CRC Press
ISBN: 9780750302951
Category : Technology & Engineering
Languages : en
Pages : 880
Book Description
Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.