Author: C. H. Gooch
Publisher: John Wiley & Sons
ISBN:
Category : Science
Languages : en
Pages : 356
Book Description
Gallium Arsenide Lasers
Author: C. H. Gooch
Publisher: John Wiley & Sons
ISBN:
Category : Science
Languages : en
Pages : 356
Book Description
Publisher: John Wiley & Sons
ISBN:
Category : Science
Languages : en
Pages : 356
Book Description
(Aluminum-gallium) Arsenide Semiconductor Lasers and Integrated Optoelectronics
Author: Daniel Paul Wilt
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 190
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 190
Book Description
Fabrication and Analysis of a Gallium Arsenide Laser Diode
Author: Thomas John Curry
Publisher:
ISBN:
Category : Lasers
Languages : en
Pages : 150
Book Description
Publisher:
ISBN:
Category : Lasers
Languages : en
Pages : 150
Book Description
Gallium Arsenide Laser for Cooperative Target Tracking
Author: Norman Edward Heger
Publisher:
ISBN:
Category : Lasers
Languages : en
Pages : 60
Book Description
Publisher:
ISBN:
Category : Lasers
Languages : en
Pages : 60
Book Description
HIGH-POWER GALLIUM ARSENIDE LASER DIODES.
Author: L. Wandinger
Publisher:
ISBN:
Category :
Languages : en
Pages : 24
Book Description
The essential features in the design, development, and performance of GaAs p-n junction laser diodes with high output in the coherent beam for application in secure communication systems are discussed. After a brief review of device design principles, the technology of wafer preparation, diffusion of extremely planar p-n junctions and the formation of ohmic, low resistance, area contacts developed at this Command is presented. Measurement techniques to determine the performance characteristics of these lasers such as threshold current density, output power, external quantum efficiency, spectral distribution and linewidth of emitted radiation are discussed. Experimental units with a total average power output in the coherent beam of more than three watts corresponding to a quantum efficiency of 15 percent have been made. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 24
Book Description
The essential features in the design, development, and performance of GaAs p-n junction laser diodes with high output in the coherent beam for application in secure communication systems are discussed. After a brief review of device design principles, the technology of wafer preparation, diffusion of extremely planar p-n junctions and the formation of ohmic, low resistance, area contacts developed at this Command is presented. Measurement techniques to determine the performance characteristics of these lasers such as threshold current density, output power, external quantum efficiency, spectral distribution and linewidth of emitted radiation are discussed. Experimental units with a total average power output in the coherent beam of more than three watts corresponding to a quantum efficiency of 15 percent have been made. (Author).
Gallium Arsenide Phosphide Injection Laser Diodes
Author: Carl J. Magee
Publisher:
ISBN:
Category : Diodes
Languages : en
Pages : 236
Book Description
Publisher:
ISBN:
Category : Diodes
Languages : en
Pages : 236
Book Description
Design and Fabrication of Gallium Arsenide-aluminum Gallium Arsenide Two-mode Cross-coupled Bistable Laser Diodes for Optical Switching and Memory Applications
Properties of Gallium Arsenide Diode Lasers
Author: Christian Deutsch
Publisher: Lang, Peter, AG, Internationaler Verlag Der Wissenschaften
ISBN:
Category : Semiconductor lasers
Languages : en
Pages : 16
Book Description
Publisher: Lang, Peter, AG, Internationaler Verlag Der Wissenschaften
ISBN:
Category : Semiconductor lasers
Languages : en
Pages : 16
Book Description
Gallium Arsenide Lasers
A Technological Forecast for Gallium Arsenide Lasers
Author: Harold Muschott Olson
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 0
Book Description
A technological forecast for GaAs injection lasers operating at room temperature is made. It indicates significant technological progress followed by widespread use for optical waveguide communications in the early 1980's. Extrapolated values for power, efficiency, lifetime, threshold current, and cost per watt are tabulated for the years 1976 and 1980. Two trend extrapolation techniques based on the different assumptions that technological progress advances exponentially with time and that technological progress advances exponentially with cumulative production are compared. The technological progress function which uses patent output as a measure of cumulative production is determined to be the best measure in the case of the injection laser. (Author).
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 0
Book Description
A technological forecast for GaAs injection lasers operating at room temperature is made. It indicates significant technological progress followed by widespread use for optical waveguide communications in the early 1980's. Extrapolated values for power, efficiency, lifetime, threshold current, and cost per watt are tabulated for the years 1976 and 1980. Two trend extrapolation techniques based on the different assumptions that technological progress advances exponentially with time and that technological progress advances exponentially with cumulative production are compared. The technological progress function which uses patent output as a measure of cumulative production is determined to be the best measure in the case of the injection laser. (Author).