Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 168
Book Description
Aim of this contract is the achievement of a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed is metalorganic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or may contain a p-n junction of its own and form the bottom cell of a two junction tandem solar cell structure. The III-V material for the single-junction case is GaAs and for the two-junction case is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include the following: (1) a 17.6% efficient GaAs-on-Si solar cell; (2) an 18.5% efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8% efficient GaAs-on-GaAs solar cell; (4) a 28.7% efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.
Gallium Arsenide-based Ternary Compounds and Multi-band-gap Solar Cell Research
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 168
Book Description
Aim of this contract is the achievement of a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed is metalorganic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or may contain a p-n junction of its own and form the bottom cell of a two junction tandem solar cell structure. The III-V material for the single-junction case is GaAs and for the two-junction case is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include the following: (1) a 17.6% efficient GaAs-on-Si solar cell; (2) an 18.5% efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8% efficient GaAs-on-GaAs solar cell; (4) a 28.7% efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.
Publisher:
ISBN:
Category :
Languages : en
Pages : 168
Book Description
Aim of this contract is the achievement of a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed is metalorganic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or may contain a p-n junction of its own and form the bottom cell of a two junction tandem solar cell structure. The III-V material for the single-junction case is GaAs and for the two-junction case is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include the following: (1) a 17.6% efficient GaAs-on-Si solar cell; (2) an 18.5% efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8% efficient GaAs-on-GaAs solar cell; (4) a 28.7% efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.
Gallium Arsenide-based Ternary Compounds and Multi-band-gap Solar Cell Research
Author: Stanley M. Vernon
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages :
Book Description
Gallium Arsenide-Based Ternary Compounds and Multi-Band-Gap Solar Cell Research, Annual Subcontract Report, 15 April 1988 - 14 June 1990
Gallium Arsenide-based Ternary Compounds and Multi-band-gap Solar Cell Research
Author: Stanley Vernon
Publisher:
ISBN:
Category : Solar cells
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Solar cells
Languages : en
Pages :
Book Description
Gallium Arsenide-based Ternary Compounds and Multi-band-gap Solar Cell Research
Author: Stanley M. Vernon
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages :
Book Description
Energy Research Abstracts
Scientific and Technical Aerospace Reports
Energy and water development appropriations for 1984
Author: United States. Congress. House. Committee on Appropriations. Subcommittee on Energy and Water Development
Publisher:
ISBN:
Category : United States
Languages : en
Pages : 2386
Book Description
Publisher:
ISBN:
Category : United States
Languages : en
Pages : 2386
Book Description
Congressional Budget Request
Author: United States. Department of Energy
Publisher:
ISBN:
Category : Energy conservation
Languages : en
Pages : 760
Book Description
Publisher:
ISBN:
Category : Energy conservation
Languages : en
Pages : 760
Book Description
Government Reports Annual Index
Author:
Publisher:
ISBN:
Category : Research
Languages : en
Pages : 1686
Book Description
Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.
Publisher:
ISBN:
Category : Research
Languages : en
Pages : 1686
Book Description
Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.