Author: David W. Almgren
Publisher:
ISBN:
Category : Gallium compounds
Languages : en
Pages : 64
Book Description
Available information on liquid phase, vapor phase (including chemical vapor deposition) and molecular beam epitaxy growth procedures that could be used to fabricate single crystal, heteroface, (AlGa) As/GaAs solar cells, for space applications is summarized. A comparison of the basic cost elements of the epitaxy growth processes shows that the current infinite melt LPE process has the lower cost per cell for an annual production rate of 10,000 cells. The metal organic chemical vapor deposition (MO-CVD) process has the potential for low cost production of solar cells but there is currently a significant uncertainty in process yield, i.e., the fraction of active material in the input gas stream that ends up in the cell. Additional work is needed to optimize and document the process parameters for the MO-CVD process. (NTRL site)
GaA1As/GaAs Solar Cell Process Study
Author: David W. Almgren
Publisher:
ISBN:
Category : Gallium compounds
Languages : en
Pages : 64
Book Description
Available information on liquid phase, vapor phase (including chemical vapor deposition) and molecular beam epitaxy growth procedures that could be used to fabricate single crystal, heteroface, (AlGa) As/GaAs solar cells, for space applications is summarized. A comparison of the basic cost elements of the epitaxy growth processes shows that the current infinite melt LPE process has the lower cost per cell for an annual production rate of 10,000 cells. The metal organic chemical vapor deposition (MO-CVD) process has the potential for low cost production of solar cells but there is currently a significant uncertainty in process yield, i.e., the fraction of active material in the input gas stream that ends up in the cell. Additional work is needed to optimize and document the process parameters for the MO-CVD process. (NTRL site)
Publisher:
ISBN:
Category : Gallium compounds
Languages : en
Pages : 64
Book Description
Available information on liquid phase, vapor phase (including chemical vapor deposition) and molecular beam epitaxy growth procedures that could be used to fabricate single crystal, heteroface, (AlGa) As/GaAs solar cells, for space applications is summarized. A comparison of the basic cost elements of the epitaxy growth processes shows that the current infinite melt LPE process has the lower cost per cell for an annual production rate of 10,000 cells. The metal organic chemical vapor deposition (MO-CVD) process has the potential for low cost production of solar cells but there is currently a significant uncertainty in process yield, i.e., the fraction of active material in the input gas stream that ends up in the cell. Additional work is needed to optimize and document the process parameters for the MO-CVD process. (NTRL site)
GaAlAs/GaAs Solar Cell Process Study
GaA1As/GaAs Solar Cell Process Study
Author: David W. Almgren
Publisher:
ISBN:
Category : Gallium compounds
Languages : en
Pages : 72
Book Description
Publisher:
ISBN:
Category : Gallium compounds
Languages : en
Pages : 72
Book Description
GaAs/GaAlAs Solar Cells
Author: D. L. Williamson
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 0
Book Description
Study on the Post-Growth Manufacturing Process for GaAs and InGaP Solar Cells
Development of Polycrystal GaAs Solar Cells
Author: Rockwell International. Electronics Research Center
Publisher:
ISBN:
Category : Gallium arsenide solar cells
Languages : en
Pages : 54
Book Description
Publisher:
ISBN:
Category : Gallium arsenide solar cells
Languages : en
Pages : 54
Book Description
Development of Polycrystal GaAs Solar Cells
Author: Rockwell International. Electronics Research Center
Publisher:
ISBN:
Category : Gallium arsenide solar cells
Languages : en
Pages : 82
Book Description
Publisher:
ISBN:
Category : Gallium arsenide solar cells
Languages : en
Pages : 82
Book Description
Scientific and Technical Aerospace Reports
Preparation of Silicon Substrates for Gallium Arsenide Solar Cells
Author: Spire Corporation
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 27
Book Description
This report describes a process and structure for the fabrication of high-efficiency GaAs-GaAlAs heteroface solar cells. A GaAs- GaAlAs solar cell with AM1 efficiency greater than 20% has been fabricated on a single-crystal GaAs substrate, and a GaAs-GaAlAs solar cell showing high open-circuit voltage has been fabricated on a single-crystal bulk-Ge substrate.
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 27
Book Description
This report describes a process and structure for the fabrication of high-efficiency GaAs-GaAlAs heteroface solar cells. A GaAs- GaAlAs solar cell with AM1 efficiency greater than 20% has been fabricated on a single-crystal GaAs substrate, and a GaAs-GaAlAs solar cell showing high open-circuit voltage has been fabricated on a single-crystal bulk-Ge substrate.