Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices. A Research Report Covering Work Completed from February 1981 to January 1982 PDF Download

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Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices. A Research Report Covering Work Completed from February 1981 to January 1982

Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices. A Research Report Covering Work Completed from February 1981 to January 1982 PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
Grain boundary barrier heights and other properties were measured on a variety of Wacker poly-Si to test the contention of Redfield that as received samples had no potential barriers and that temperature anneals activate the impurities in the boundaries. Our results show that these generalizations are not true and that a variety of barrier behaviors are found. Several of our new analytical techniques for studying grain boundaries and their passivation have been upgraded, including a new cell for Fourier Transform Infrared (FTIR) studies, electrochemical techniques, and a laser scanning apparatus for imaging grain boundaries. Grain boundaries in a variety of samples have been successfully passivated by the use of both the Kaufman ion source and a dc discharge apparatus. 20% improvements in cell efficiencies have been observed in large grained poly-Si cells, and the time of treatment has been drastically reduced.

Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices. A Research Report Covering Work Completed from February 1981 to January 1982

Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices. A Research Report Covering Work Completed from February 1981 to January 1982 PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
Grain boundary barrier heights and other properties were measured on a variety of Wacker poly-Si to test the contention of Redfield that as received samples had no potential barriers and that temperature anneals activate the impurities in the boundaries. Our results show that these generalizations are not true and that a variety of barrier behaviors are found. Several of our new analytical techniques for studying grain boundaries and their passivation have been upgraded, including a new cell for Fourier Transform Infrared (FTIR) studies, electrochemical techniques, and a laser scanning apparatus for imaging grain boundaries. Grain boundaries in a variety of samples have been successfully passivated by the use of both the Kaufman ion source and a dc discharge apparatus. 20% improvements in cell efficiencies have been observed in large grained poly-Si cells, and the time of treatment has been drastically reduced.

Energy Research Abstracts

Energy Research Abstracts PDF Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 976

Book Description
Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.

Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices. A Final Research Report Covering Work Completed from February-December 1979

Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices. A Final Research Report Covering Work Completed from February-December 1979 PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
Several aspects of the electrical properties of silicon grain boundaries have been studied. The temperature dependence of the zero-bias conductance and capacitance of single boundaries has been measured and shown to be in good agreement with a simple double depletion layer/thermal emission (DDL/TE) model developed to predict the transport properties of such structures. In addition, it has been shown that deconvolution of the I-V properties of some boundaries via a deconvolution scheme suggested by Pike and Seager yields effective one-electron densities of trapping states which are in good agreement with estimates obtained by low temperature electron emission measurements. Experiments have also been performed which indicate that diffusion of atomic hydrogen into silicon grain boundaries greatly reduces this density of trapping states. In properly prepared, large grained polycrystalline samples all measurable traces of grain boundary potential barriers can be removed to substantial penetration depths after several hours exposure to a hydrogen plasma at elevated temperatures. Initial experiments on prototype polysilicon solar cells have shown that this passivation process can improve AM1 efficiencies. In order to more fully understand and develop this process for improving practical multigrained cells, several device research efforts with other DOE/SERI funded contractors have been initiated.

Solar Energy Update

Solar Energy Update PDF Author:
Publisher:
ISBN:
Category : Solar energy
Languages : en
Pages : 370

Book Description


Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices

Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices PDF Author: C. H. Seager
Publisher:
ISBN:
Category : Silicon crystals
Languages : en
Pages :

Book Description


Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 756

Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Defects in Semiconductors II

Defects in Semiconductors II PDF Author: Subhash Mahajan
Publisher: North Holland
ISBN:
Category : Science
Languages : en
Pages : 628

Book Description


Interference Problems on Wing-fuselage Combinations in Inviscid, Incompressible Flow

Interference Problems on Wing-fuselage Combinations in Inviscid, Incompressible Flow PDF Author: Aeronautical Research Council (Great Britain)
Publisher:
ISBN: 9780114709266
Category : Airplanes
Languages : en
Pages : 1212

Book Description


Government Reports Announcements & Index

Government Reports Announcements & Index PDF Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1452

Book Description


Government Reports Annual Index: Keyword A-L

Government Reports Annual Index: Keyword A-L PDF Author:
Publisher:
ISBN:
Category : Government reports announcements & index
Languages : en
Pages : 1216

Book Description