Author: C. H. SeagerPublisher:
ISBN:
Category : Silicon crystals
Languages : en
Pages :
Book Description
Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices
Author: C. H. SeagerPublisher:
ISBN:
Category : Silicon crystals
Languages : en
Pages :
Book Description
Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices. A Final Research Report Covering Work Completed from February-December 1979
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Several aspects of the electrical properties of silicon grain boundaries have been studied. The temperature dependence of the zero-bias conductance and capacitance of single boundaries has been measured and shown to be in good agreement with a simple double depletion layer/thermal emission (DDL/TE) model developed to predict the transport properties of such structures. In addition, it has been shown that deconvolution of the I-V properties of some boundaries via a deconvolution scheme suggested by Pike and Seager yields effective one-electron densities of trapping states which are in good agreement with estimates obtained by low temperature electron emission measurements. Experiments have also been performed which indicate that diffusion of atomic hydrogen into silicon grain boundaries greatly reduces this density of trapping states. In properly prepared, large grained polycrystalline samples all measurable traces of grain boundary potential barriers can be removed to substantial penetration depths after several hours exposure to a hydrogen plasma at elevated temperatures. Initial experiments on prototype polysilicon solar cells have shown that this passivation process can improve AM1 efficiencies. In order to more fully understand and develop this process for improving practical multigrained cells, several device research efforts with other DOE/SERI funded contractors have been initiated.
Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices. A Research Report Covering Work Completed from February 1981 to January 1982
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Grain boundary barrier heights and other properties were measured on a variety of Wacker poly-Si to test the contention of Redfield that as received samples had no potential barriers and that temperature anneals activate the impurities in the boundaries. Our results show that these generalizations are not true and that a variety of barrier behaviors are found. Several of our new analytical techniques for studying grain boundaries and their passivation have been upgraded, including a new cell for Fourier Transform Infrared (FTIR) studies, electrochemical techniques, and a laser scanning apparatus for imaging grain boundaries. Grain boundaries in a variety of samples have been successfully passivated by the use of both the Kaufman ion source and a dc discharge apparatus. 20% improvements in cell efficiencies have been observed in large grained poly-Si cells, and the time of treatment has been drastically reduced.
Energy Research Abstracts
Author: Scientific and Technical Aerospace Reports
Author: Solar Energy Update
Author: Hydrogen in Semiconductors
Author: Jacques I. PankovePublisher: Academic Press
ISBN: 0080864317
Category : Technology & Engineering
Languages : en
Pages : 655
Book Description
Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
Energy Research Abstracts
Author: Grain Boundaries in Semiconductors
Author: H. J. LeamyPublisher: North Holland
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 446
Book Description
Author: