Author: Takayasu Sakurai Publisher: Springer Science & Business Media ISBN: 0387292187 Category : Technology & Engineering Languages : en Pages : 420
Book Description
Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of 0.5 V. The topics include the minimum required knowledge of the fabrication of SOI substrates; FD-SOI devices and the latest developments in device and process technologies; and ultralow-voltage circuits, such as digital circuits, analog/RF circuits, and DC-DC converters. Each ultra-low-power technique related to devices and circuits is fully explained using figures to help understanding.
Author: O. Kononchuk Publisher: Elsevier ISBN: 0857099256 Category : Technology & Engineering Languages : en Pages : 503
Book Description
Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. - Covers SOI transistors and circuits, as well as manufacturing processes and reliability - Looks at applications such as memory, power devices, and photonics
Author: Kiyoo Itoh Publisher: Springer Science & Business Media ISBN: 0387688536 Category : Technology & Engineering Languages : en Pages : 351
Book Description
Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed both to meet the needs of a rapidly growing mobile cell phone market and to offset a significant increase in the power dissipation of high-end microprocessor units. The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs.
Author: Yasuhisa Omura Publisher: John Wiley & Sons ISBN: 1119107350 Category : Technology & Engineering Languages : en Pages : 483
Book Description
Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications Based on timely published and unpublished work written by expert authors Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses Describes the physical effects (quantum, tunneling) of MOS devices Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities. Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants." —Natural Resources Defense Council, USA, Feb. 2015 All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book “MOS Devices for Low-Voltage and Low-Energy Applications” explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." —Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC) "The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this." —Prof. Joao A. Martino, University of Sao Paulo, Brazil
Author: Alexei Nazarov Publisher: Springer Science & Business Media ISBN: 3642158684 Category : Technology & Engineering Languages : en Pages : 437
Book Description
"Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Author: J.-P. Colinge Publisher: Springer Science & Business Media ISBN: 038771751X Category : Technology & Engineering Languages : en Pages : 350
Book Description
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Author: Brinda Bhowmick Publisher: Cambridge Scholars Publishing ISBN: 1527507041 Category : Technology & Engineering Languages : en Pages : 136
Book Description
This book covers the physical principles, modelling, fabrication and applications of Tunnel Field Effect Transistors (TFETs) and Fin Field Effect Transistors (FinFETs). This is intended to act as a reference for undergraduate, postgraduate and research scholars belonging to backgrounds of Applied Physics, Electrical and Electronics Engineering and Material Science. Of paramount importance is the need to understand the simulation aspects of these devices, the validity of mathematical models, basics on fabrication and details of applications of these nanoscale devices. The presentation of the book assumes that the reader has fundamental concepts of semiconductor device physics and electronic circuits. A course such as the one this book is intended to accompany and motivate both students and scholars to get involved in the research on TFETs and FinFETs. Further, this book can act as a reference for device engineers and scientists who need to get updated information on device and technological developments.
Author: H. S. Saini Publisher: Springer ISBN: 9811038120 Category : Technology & Engineering Languages : en Pages : 583
Book Description
The book contains high quality papers presented in the Fifth International Conference on Innovations in Electronics and Communication Engineering (ICIECE 2016) held at Guru Nanak Institutions, Hyderabad, India during 8 and 9 July 2016. The objective is to provide the latest developments in the field of electronics and communication engineering specially the areas like Image Processing, Wireless Communications, Radar Signal Processing, Embedded Systems and VLSI Design. The book aims to provide an opportunity for researchers, scientists, technocrats, academicians and engineers to exchange their innovative ideas and research findings in the field of Electronics and Communication Engineering.
Author: Maurizio Valle Publisher: Springer Science & Business Media ISBN: 1402027826 Category : Science Languages : en Pages : 309
Book Description
Intelligent/smart systems have become common practice in many engineering applications. On the other hand, current low cost standard CMOS technology (and future foreseeable developments) makes available enormous potentialities. The next breakthrough will be the design and development of "smart adaptive systems on silicon" i.e. very power and highly size efficient complete systems (i.e. sensing, computing and "actuating" actions) with intelligence on board on a single silicon die. Smart adaptive systems on silicon will be able to "adapt" autonomously to the changing environment and will be able to implement "intelligent" behaviour and both perceptual and cognitive tasks. At last, they will communicate through wireless channels, they will be battery supplied or remote powered (via inductive coupling) and they will be ubiquitous in our every day life. Although many books deal with research and engineering topics (i.e. algorithms, technology, implementations, etc.) few of them try to bridge the gap between them and to address the issues related to feasibility, reliability and applications. Smart Adaptive Systems on Silicon, though not exhaustive, tries to fill this gap and to give answers mainly to the feasibility and reliability issues. Smart Adaptive Systems on Silicon mainly focuses on the analog and mixed mode implementation on silicon because this approach is amenable of achieving impressive energy and size efficiency. Moreover, analog systems can be more easily interfaced with sensing and actuating devices.
Author: Takayasu Sakurai
Author: O. Kononchuk
Author: Kiyoo Itoh
Author: Yasuhisa Omura
Author: Electrochemical Society. Meeting
Author: Alexei Nazarov
Author: J.-P. Colinge
Author: Brinda Bhowmick
Author: H. S. Saini
Author: Maurizio Valle