Celebrating 1 year of Frontiers in Electronic Materials PDF Download

Author: Ctirad Uher
Publisher: Frontiers Media SA
ISBN: 2832542638
Category : Science
Languages : en
Pages : 140

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Author: Jörg Heber
Publisher: John Wiley & Sons
ISBN: 3527667725
Category : Technology & Engineering
Languages : en
Pages : 1

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Book Description
This collection of extended abstracts summarizes the latest research as presented at "Frontiers in Electronic Materials", a Nature conference on correlation effects and memristive phenomena, which took place in 2012. The contributions from leading authors from the US, Japan, Korea, and Europe discuss breakthroughs and challenges in fundamental research as well as the potential for future applications. Hot topics covered include: Electron correlation and unusual quantum effects Oxide heterostructures and interfaces Multiferrroics, spintronics, ferroelectrics and flexoelectrics Processing in nanotechnology Advanced characterization techniques Superionic conductors, thermoelectrics, photovoltaics Chip architectures and computational concepts An essential resource for the researchers of today and tomorrow.

Author: Sorin Cristoloveanu
Publisher: World Scientific
ISBN: 9814522058
Category : Technology & Engineering
Languages : en
Pages : 241

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Book Description
Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.

Author: S.R.S Prabaharan
Publisher: Springer
ISBN: 9811042357
Category : Technology & Engineering
Languages : en
Pages : 167

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Book Description
This book is a collection of keynote lectures from international experts presented at International Conference on NextGen Electronic Technologies (ICNETS2-2016). ICNETS2 encompasses six symposia covering all aspects of electronics and communications domains, including relevant nano/micro materials and devices . This volume comprises of recent research in areas like computational signal processing analysis, intelligent embedded systems, nanoelectronic materials and devices, optical and microwave technologies, VLSI design: circuits systems and application, and wireless communication networks, and the internet of things. The contents of this book will be useful to researchers, professionals, and students working in the core areas of electronics and their applications, especially to signal processing, embedded systems, and networking.

Author: A. Giles Davies
Publisher: Imperial College Press
ISBN: 1860947514
Category : Technology & Engineering
Languages : en
Pages : 328

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Outlines a selection of advances made worldwide in the field of modern engineering at the nanometer scale. This work covers topics that include: the fabrication and measurement of nanoelectronic devices, organic conductors, and bioelectronic materials; the assembly of such structures into appropriate configurations; and more.

Author: Zhigang Shuai
Publisher: Springer Science & Business Media
ISBN: 3642250769
Category : Science
Languages : en
Pages : 96

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Book Description
Mechanism of charge transport in organic solids has been an issue of intensive interests and debates for over 50 years, not only because of the applications in printing electronics, but also because of the great challenges in understanding the electronic processes in complex systems. With the fast developments of both electronic structure theory and the computational technology, the dream of predicting the charge mobility is now gradually becoming a reality. This volume describes recent progresses in Prof. Shuai’s group in developing computational tools to assess the intrinsic carrier mobility for organic and carbon materials at the first-principles level. According to the electron-phonon coupling strength, the charge transport mechanism is classified into three different categories, namely, the localized hopping model, the extended band model, and the polaron model. For each of them, a corresponding theoretical approach is developed and implemented into typical examples.

Author: National Academies of Sciences, Engineering, and Medicine
Publisher: National Academies Press
ISBN: 0309483875
Category : Technology & Engineering
Languages : en
Pages : 295

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Book Description
Modern materials science builds on knowledge from physics, chemistry, biology, mathematics, computer and data science, and engineering sciences to enable us to understand, control, and expand the material world. Although it is anchored in inquiry-based fundamental science, materials research is strongly focused on discovering and producing reliable and economically viable materials, from super alloys to polymer composites, that are used in a vast array of products essential to today's societies and economies. Frontiers of Materials Research: A Decadal Survey is aimed at documenting the status and promising future directions of materials research in the United States in the context of similar efforts worldwide. This third decadal survey in materials research reviews the progress and achievements in materials research and changes in the materials research landscape over the last decade; research opportunities for investment for the period 2020-2030; impacts that materials research has had and is expected to have on emerging technologies, national needs, and science; and challenges the enterprise may face over the next decade.

Author: Robert Dietrich Frielinghaus
Publisher: Forschungszentrum Jülich
ISBN: 3893368671
Category :
Languages : en
Pages : 205

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Author: Werner Kern
Publisher: Elsevier
ISBN: 0080524214
Category : Technology & Engineering
Languages : en
Pages : 881

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Book Description
This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. - Provides an all-new sequel to the 1978 classic, Thin Film Processes - Introduces new topics, and several key topics presented in the original volume are updated - Emphasizes practical applications of major thin film deposition and etching processes - Helps readers find the appropriate technology for a particular application

Author: Dieter Weber
Publisher: Forschungszentrum Jülich
ISBN: 3893369503
Category :
Languages : en
Pages : 141

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Book Description
Ionic transport in nanostructures at high eld strength has recently gained attention, because novel types of computer memory with potentially superior properties rely on such phenomena. The applied voltages are only moderate, but they drop over the distance of a few nanometers and lead to extreme eld strengths in the MV/cm region. Such strong elds contributes signi cantly to the activation energy for ionic jump processes. This leads to an exponential increase of transport speed with voltage. Conventional high-temperature ionic conduction, in contrast, only relies on thermal activation for such jumps. In this thesis, the transport of minute amounts of oxygen through a thin dielectric layer sandwiched between two thin conducting oxide electrodes was detected semiquantitatively by measuring the conductance change of the electrodes after applying a current through the dielectric layer. The relative conductance change
G=G as a function of current I and duration t follows over several orders of magnitude a simple, empirical law of the form
G=G = CIAtB with t parameters C, A and B; A;B 2 [0; 1]. This empirical law can be linked to a predicted exponential increase of the transport speed with voltage at high eld strength. The behavior in the time domain can be explained with a spectrum of relaxation processes, similar to the relaxation of dielectrics. The in uence of temperature on the transport is strong, but still much lower than expected. This contradicts a commonly used law for high- eld ionic transport. The di erent oxide layers are epitaxial with thicknesses between 5 and 70 nm. First large-scale test samples were fabricated using shadow masks. The general behavior of such devices was studied extensively. In an attempt to achieve quantitative results with defect-free, miniaturized devices, a lithographic manufacturing process that uses repeated steps of epitaxial deposition and structuring of the layers was developed. It employs newly developed and optimized wet chemical etching processes for the conducting electrodes. First high-quality devices could be manufactured with this process and con rmed that such devices su er less from parasitic e ects. The lithographically structured samples were made from di erent materials. The results from the rst test samples and the lithographically structured samples are therefore not directly comparable. They do exhibit however in principle the same behavior. Further investigation of such lithographically structured samples appears promising