From design to characterization of III-V on silicon lasers for photonic integrated circuits PDF Download

Author: Hélène Duprez
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description
Ces trois années de thèse balayent la conception, la fabrication et la caractérisation de lasers III V sur silicium à 1.31 μm pour les data-communications. Le design des sources englobe notamment l'optimisation du couplage entre l'empilement III V et le silicium, effectué grâce à un taper adiabatique, ainsi que l'étude de la cavité laser inscrite, comme le taper, dans le silicium. Trois types de cavités à base de réseaux ont été étudiées: les cavités à contre-réaction distribuée (DFB pour distributed feedback), celles à réseaux de Bragg distribuées (DBR pour distributed Bragg reflector) et enfin celles à réseaux de Bragg échantillonnées (SGDBR pour sampled-grating DBR). Deux solutions ont été abordées concernant les lasers DFB: le réseau, inscrit dans le guide silicium sous la zone de gain, est soit gravé au-dessus du guide Si, soit sur les côtés. La seconde possibilité, appelée 'DFB lasers couplés latéralement', simplifie la fabrication et élargit les possibilités de design.Les lasers DFB fabriqués sont très prometteurs en terme de puissance (avec jusque 20 mW dans le guide) ainsi que pour leur pureté spectrale (avec une différence de plus de 50 dB entre le mode principal et le mode suivant). Une accordabilité spectrale de plus de 27 nm a été obtenue en continu avec les lasers SGDBR tout en conservant une très bonne pureté spectrale et une puissance de plus de 7 mW dans le guide.

Author: Stanley Cheung
Publisher:
ISBN: 9781321608205
Category :
Languages : en
Pages :

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Book Description
There has been extensive research in realizing large-scale integration of silicon (Si) photonics for long-haul communications, high-throughput optical interconnects, and future high performance computing (HPC). The impetus for this research lies in the fact that the silicon-on-insulator (SOI) platform is fully compatible with CMOS technology which drives mature IC technology and allows for a convergence with large-scale integrated photonics. Recent advances in key components such as high-contrast, low-loss arrayed waveguide gratings/routers (AWG/AWGR), high speed optical modulators, germanium photo-detectors, and single-wavelength hybrid silicon laser sources have all paved a path towards realizing large chip-scale optical systems with various functionalities. Recently, the energy efficiency of these photonic components in an optical link have drawn strong attention with some projections indicating by 2020, the energy consumption of most components in 100-gigabit-per-second (Gbps) systems will be between a few pico-Joules (pJ) and sub-pJ per bit. Therefore, over the past few years, there has been keen interest in heterogeneous integration of III-V compounds with silicon to realize monolithic integration of efficient hybrid devices. This dissertation pursues the systematic development of passive silicon photonics and III-V InP/InGaAsP photonics to realize III-V/Si heterogeneous integration. Heavy emphasis is placed on optimizing the design and fabrication of the silicon photonics platform for optical routing as well as the III-V platform for optical gain functionality. Along the way, novel devices are developed such as high contrast and high resolution arrayed waveguide gratings (AWG) for optical mux/demux, continuous wave (CW) laser sources, and low repetition rate mode-locked lasers for on-chip frequency combs. In the end, this work culminates in the fabrication, design, and characterization of a hybrid III-V/Si platform via hydrophilic wafer-bonding that allows for the realization of semiconductor lasers and record efficiency III-V/Si optical amplifiers on a silicon substrate. We discuss the design and demonstration of highly efficient 1.55 [mu]m hybrid III-V/Silicon semiconductor optical amplifiers (SOA). The optimized III-V wafer stack consists of Al(0.10)In(0.71)Ga(0.18)As multiple quantum wells (MQW) and Al(0.48)In(0.52)As electron stop layers to realize SOAs with high wall-plug efficiency (WPE). We present various designs and experimentally determine WPE values for 2 mW and 0.1 mW input power amplification. The 400 [mu]m long flared SOA achieved the highest WPE value of 12.1% for output power > 10mW and the 400 [mu]m long straight SOA achieved the highest WPE value of 7.3% for output power

Author: Zihao Wang
Publisher:
ISBN:
Category : Metal oxide semiconductors, Complementary
Languages : en
Pages : 131

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Book Description
"Integration of III-V components on Si substrates is required for realizing the promise of Silicon Photonic systems. Specifically, the direct bandgap of many III-V materials is required for light sources, efficient modulators and photodetectors. Several different approaches have been taken to integrate III-V lasers into the silicon photonic platform, such as wafer bonding, direct growth, butt coupling, etc. Here, we have devised a novel laser design that overcomes the above limitations. In our approach, we use InAs quantum dot (QD) lasers monolithically integrated with silicon waveguides and other Si photonic passive components. Due to their unique structures, the QD lasers have been proven by several groups to have the combination of high temperature stability, large modulation bandwidth and low power consumption compared with their quantum well counterparts, which makes it an ideal candidate for Si photonic applications. The first section of this dissertation introduces the theory and novelty of QD lasers, the DC and RF characterization methods of QD lasers are also discussed. The second section is focused on the growth of QD gain chip which a broadband gain chip based on QD inhomogeneous broadening properties was demonstrated. In third section, the lasers devices are built on Si substrate by Pd wafer bonding technology. Firstly, a ridge waveguide QD laser is demonstrated in this section which have better heat dissipation and lower threshold current compared to the unbonded lasers. In section four, a on Si comb laser is also developed. Due to inhomogeneous broadening and ultrafast carrier dynamics, InAs quantum dots have key advantages that make them well suited for Mode-locked lasers (MLLs). In section five, a passively mode-locked InAs quantum dots laser on Si is achieved at a repetition rate of ~7.3 GHz under appropriate bias conditions. In section six, a butt-joint integration configuration based on QD lasers and silicon photonics ring resonator is tested by using to translation stage. In order to achieve the on chip butt-joint integration, an on chip laser facet was created in section seven. A novel facet etching method is developed by using Br-ion beam assist etching (Br-IBAE). In section eight, a Pd-GaAs butt-joint integration platform was proposed, a hybrid tunable QD laser which consist of a QD SOA gain chip butt joint coupled with a passive Si3N4 photonic integrated circuit is proof of concept by using an external booster SOA coupled with a Si3N4 ring reflector feedback circuit. The final section summarized the work discussed in this thesis and also discussed some future approaches by using QD lasers integrated with silicon photonics integrated circuits based on the Pd-GaAs wafer bonding butt-joint coupled platform."--Abstract.

Author: Lukas Chrostowski
Publisher: Cambridge University Press
ISBN: 1107085454
Category : Science
Languages : en
Pages : 439

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Book Description
This hands-on introduction to silicon photonics engineering equips students with everything they need to begin creating foundry-ready designs.

Author: Olesya Bondarenko
Publisher:
ISBN: 9781321649000
Category :
Languages : en
Pages : 119

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Book Description
The rapidly evolving global information infrastructure requires ever faster data transfer within computer networks and stations. Integrated chip scale photonics can pave the way to accelerated signal manipulation and boost bandwidth capacity of optical interconnects in a compact and ergonomic arrangement. A key building block for integrated photonic circuits is an on-chip laser. In this dissertation we explore ways to reduce the physical footprint of semiconductor lasers and make them suitable for high density integration on silicon, a standard material platform for today's integrated circuits. We demonstrated the first room temperature metalo-dielectric nanolaser, sub-wavelength in all three dimensions. Next, we demonstrated a nanolaser on silicon, showing the feasibility of its integration with this platform. We also designed and realized an ultracompact feedback laser with edge-emitting structure, amenable for in-plane coupling with a standard silicon waveguide. Finally, we discuss the challenges and propose solutions for improvement of the device performance and practicality.

Author: Richard Osgood jr.
Publisher: Springer Nature
ISBN: 3030651932
Category : Science
Languages : en
Pages : 369

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Book Description
This graduate-level textbook presents the principles, design methods, simulation, and materials of photonic circuits. It provides state-of-the-art examples of silicon, indium phosphide, and other materials frequently used in these circuits, and includes a thorough discussion of all major types of devices. In addition, the book discusses the integrated photonic circuits (chips) that are currently increasingly employed on the international technology market in connection with short-range and long-range data communication. Featuring references from the latest research in the field, as well as chapter-end summaries and problem sets, Principles of Photonic Integrated Circuits is ideal for any graduate-level course on integrated photonics, or optical technology and communication.

Author: Norbert Grote
Publisher: Springer Science & Business Media
ISBN: 9783540669777
Category : Technology & Engineering
Languages : en
Pages : 496

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Book Description
Optoelectronic devices and fibre optics are the basis of cutting-edge communication systems. This monograph deals with the various components of these systems, including lasers, amplifiers, modulators, converters, filters, sensors, and more.

Author: Torrey Thiessen
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description
III-V-on-silicon (III-V-on-Si) bonding has emerged as a viable way to integrate lasers with Si photonic circuits at the wafer-scale. However, hybrid III-V-on-Si integration is often plagued by high thermal impedance and difficulty in co-integration with other materials. In this thesis, we design and demonstrate the first active devices on a new Back-Side-on-Buried-Oxide (BSoBOX integration process, in which the III-V material is introduced from the back of the silicon-on-insulator (SOI) wafer to address the common problems of III-V-on-Si integration. While designing and characterizing devices on the BSoBOX platform, the merits and limitations of the platform are also evaluated. First, we develop an optimization technique for producing short, broadband transitions between the SOI waveguides and the hybrid III-V-on-Si waveguides. The eigenmode-expansion based optimization process manipulates the lengths of short sub-tapers to produce a transition that maintains adiabaticity in the shortest length possible. Compared to an 80 μm long linear taper, with a power transfer efficiency of ∼85% at 1310 nm, the optimized design has a length of 80 μm and an efficiency ≥99.5% across the O-band. Next, two types of lasers are evaluated. We demonstrate distributed feedback lasers with threshold currents as low as 32 mA and 20 mW of waveguide-coupled power from a single end of the device. The side mode suppression ratio (SMSR) is around 50 dB within the range of 20 °C-60 °C and operation up to 80 °C is observed. We also demonstrate the first III-V-on-Si discrete-mode lasers, with the best device exhibiting 17 mW of waveguide-coupled power, a Lorentzian linewidth of 18 kHz and a SMSR ≥60 dB. The performance of these devices is comparable to the state-of-the-art III-V-on-Si lasers, despite this being the first iteration of the BSoBOX platform. Lastly, the first high-speed InP-on-Si modulators are designed and characterized on a frontside integrated platform that can be later converted to BSoBOX integration. The DC efficiency is 1.3 V·cm, roughly twice as high as lateral PN junction designs, while maintaining a comparable bandwidth of 30 GHz. Simulations show the BSoBOX designs will lead to a ∼4x improvement in efficiency and roughly 50% improvement in bandwidth compared to the current work.

Author: Hyunseok Kim
Publisher:
ISBN:
Category :
Languages : en
Pages : 132

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Book Description
Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and capability to grow directly on lattice-mismatched substrates including silicon. However, their practical applications are still in the early stages due to the difficulties in achieving high-performance nanowire emitters and integrating nanowire emitters with photonic platforms. In this dissertation, we demonstrate III-V nanowire-based lasers monolithically integrated on silicon-on-insulator (SOI) platforms, which can be potentially employed for chip-scale optical communications and photonic integrated circuits. For this, selective-area epitaxy of InGaAs nanowires on 3D structured SOI platforms is developed by catalyst-free metal-organic chemical vapor deposition. Nanowires are precisely positioned on 3D structures, including waveguides and gratings, with nearly 100 % nanowire growth yield and wide bandgap tuning ranges. Next, nanowire array-based bottom-up photonic crystal cavities are demonstrated on SOI substrates. InGaAs/InGaP core/shell nanowire arrays form 1D and 2D photonic crystal cavities on SOI layers, and single-mode room-temperature lasing from these bottom-up cavities is achieved by optically pumping the nanowire arrays. We also show that the nanowire array lasers are effectively coupled with SOI waveguides, which is achieved by integrating bottom-up nanowires on pre-patterned SOI platforms. The lasing wavelengths of nanowire array lasers are in the ranges of 1,100-1,440 nm, which covers telecommunication wavelengths, all operating at room temperature. It is also shown that arrays of proposed lasers with individually tunable wavelengths can be integrated on a single chip by lithographically tuning the cavity geometries. In summary, the III-V nanowire lasers on silicon demonstrated in this dissertation represent a new platform for ultracompact and energy-efficient light sources for silicon photonics and unambiguously point the way toward practical and functional nanowire lasers.

Author: Charles Cornet
Publisher: Elsevier
ISBN: 0081010761
Category : Technology & Engineering
Languages : en
Pages : 180

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Book Description
Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use of lasers on silicon for photonic integration. The authors demonstrate the need for efficient laser sources on silicon, motivated by the development of on-board/on-chip optical interconnects and the different integration schemes available. The authors include detailed descriptions of Group IV-based lasers, followed by a presentation of the results obtained through the bonding approach (hybrid III-V lasers). The monolithic integration of III-V semiconductor lasers are explored, concluding with a discussion of the different kinds of cavity geometries benchmarked with respect to their potential integration on silicon in an industrial environment. - Features a clear description of the advantages, drawbacks, and challenges of laser integration on silicon - Serves as a staple reference in the general field of silicon photonics - Focuses on the promising developments of hybrid and monolithic III-V lasers on silicon, previously unreviewed - Discusses the different kinds of cavity geometries benchmarked with respect to their potential integration on silicon in an industrial environment