Author: James Hedley ThompsonPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Focussed Ion Beam Doping During Molecular Beam Epitaxial Growth
Author: James Hedley ThompsonGrowth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy
Author: Nikolai N. LedentsovPublisher: Springer Science & Business Media
ISBN: 9783540657941
Category : Technology & Engineering
Languages : en
Pages : 114
Book Description
The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
Beam Processing Technologies
Author: Norman G. EinspruchPublisher: Academic Press
ISBN: 148321785X
Category : Technology & Engineering
Languages : en
Pages : 559
Book Description
Beam Processing Technologies is a collection of papers that deals with the miniaturization of devices that will be faster, consume less power, and cost less per operation or fabrication. One paper discusses metal oxide semiconductor (MOS) integrated circuit technology including the operation of devices whose lateral and vertical dimensions are scaled down. If the devices' silicon doping profiles are increased by the same scale factor, they can operate on lower voltages and currents, with the same performance. Another paper describes laser beam processing and wafer-scale integration as techniques to increase the number of devices on a silicon chip. Electron beam technologies can be used in many fabrication processes such as in microlithography, selective oxidation, doping, metrology. Ion beam applications depend on the presence of the ion introduced into the device (e.g. implantation doping), on pseudoelastic collisions (e.g. physical sputtering or crystal damage), and on inelastic scattering (e.g. polymer resist exposure). Silicon molecular beam epitaxy (SiMBE) can also grow high-quality layers at low temperature, particularly concerning germanium, especially as reagrds the growth system design and utilization of n- and p-type doping. Chemical beam epitaxy (CBE) is another epitaxial growth technique that can surpass MBE and metal organic chemical vapor deposition (MO-CVD). The collection is suitable chemical engineers, industrial physicists, and researchers whose work involve micro-fabrication and development of integrated circuits.
Thermal and Low-energy Ion Doping of Silicon(001) During Molecular Beam Epitaxy: Dopant Incorporation Kinetics and Mechanisms
Author: Lucia Chen MarkertPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Thermal and accelerated-ion doping, with In and Sb, during Si(001) molecular-beam epitaxy were investigated as a function of growth temperature T$sb{rm s}$ (500-1050$spcirc$C), dopant energy E$sb{rm d}$ (thermal-500 eV), and Si deposition rate R$sb{rm Si}$ (0.18-4.7 $mu$m h$sp{-1}).$ Surface segregation during thermal doping led to severe profile broadening and low temperature-dependent incorporation probabilities $sigmasb{rm d,th}.$ On the other hand, $sigmasb{rm d}$+ for In-ions at energies E$sb{rm In}$+ $ge$ 200 eV or Sb-ions accelerated by potentials V$sb{rm Sb}$+ $ge$ 300 V was essentially unity up to T$sb{rm s}sim850$-900$spcirc$C. At lower ion energies, $sigmasb{rm d}$+ was temperature and energy dependent, but was still much higher than $sigmasb{rm d,th}.$ Abrupt tailored depth profiles were easily obtained by controlling the ion current; layers $delta$-doped with a 250 V Sb-ion beam were $le$2 nm wide. Concentration transient analysis (CTA) was developed in order to obtain segregation data from SIMS depth profiles of modulation-doped films. The surface-segregated layer, trapped in the film using programmed T$sb{rm s}$ changes, formed a concentration spike with an integrated area corresponding to the dopant surface coverage $thetasb{rm d}.$ CTA measurements showed that Sb coevaporation led to $thetasb{rm Sb}$ values as high as 0.9 ML at 675$spcirc$C, whereas segregation was insignificant, $thetasb{rm Sb}le4times10sp{-3}$ ML, in films doped with Sb-ions accelerated by 100 V. Effective Sb segregation energies $rm Delta Gsb{Sb},$ calculated using CTA data, were both T$sb{rm s}$ and R$sb{rm Si}$ dependent. Since the segregant supply in these experiments was at the surface, rather than in the bulk, the effective $rm Delta Gsb{Sb}$ values were related to segregation from near-surface sites which reach equilibrium with the surface during film growth. The $delta$-doping and surface segregation results were the basis for modifying the dopant incorporation model developed by our group. By accounting for film growth separately from the equations describing dopant populations in the lattice potential wells, diffusion becomes the only mechanism for changing concentration gradients. A minimum of four sites between the surface and the bulk were necessary to describe the temperature and growth-rate dependences of Sb incorporation and segregation. The energy parameters for the intermediate sites were obtained by fitting experimental Sb incorporation and segregation data.
Molecular Beam Epitaxy
Author: Marian A. HermanPublisher: Springer Science & Business Media
ISBN: 3642970982
Category : Technology & Engineering
Languages : en
Pages : 394
Book Description
This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Nanofabrication Using Focused Ion and Electron Beams
Author: Ivo UtkePublisher: OUP USA
ISBN: 0199734216
Category : Technology & Engineering
Languages : en
Pages : 830
Book Description
This book comprehensively reviews the achievements and potentials of a minimally invasive, three-dimensional, and maskless surface structuring technique operating at nanometer scale by using the interaction of focused ion and electron beams (FIB/FEB) with surfaces and injected molecules.
Molecular Beam Epitaxial and Chemical Beam Epitaxial Growth and Doping Studies of (001) CdTe
Author: Damodaran RajavelPublisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 330
Book Description
Silicon-Molecular Beam Epitaxy
Author: E. KasperPublisher: CRC Press
ISBN: 1351085069
Category : Technology & Engineering
Languages : en
Pages : 260
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy
Author: John Condon BeanPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 682
Book Description
Delta-doping of Semiconductors
Author: E. F. SchubertPublisher: Cambridge University Press
ISBN: 9780521482882
Category : Science
Languages : en
Pages : 628
Book Description
This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.