Author: Xinai ZhuPublisher:
ISBN:
Category : Dislocations in crystals
Languages : en
Pages : 320
Book Description
Finite Element Modeling for Dislocation Generation in Semiconductor Crystals Grown from the Melt
Author: Xinai ZhuPublisher:
ISBN:
Category : Dislocations in crystals
Languages : en
Pages : 320
Book Description
Crystallographic Finite Element Modeling for Dislocation Generation in Semiconductor Crystals Grown by VGF Process
Author: Gary SheuPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 236
Book Description
IUTAM Symposium on Creep in Structures
Author: S. MurakamiPublisher: Springer Science & Business Media
ISBN: 940159628X
Category : Science
Languages : en
Pages : 541
Book Description
These proceedings contain 48 innovative papers consolidating the development of creep research since 1990 and discussing the new horizons in this fundamental field of applied mechanics in the coming century. This volume is useful for researchers and graduate course students in the relevant fields.
Finite Element Modeling of Dislocation Multiplication in Silicon Carbide Crystals Grown by Physical Vapor Transport Method
Author: Qingde ChenPublisher:
ISBN:
Category : Computational grids
Languages : en
Pages : 133
Book Description
Silicon carbide as a representative wide band-gap semiconductor has recently received wide attention due to its excellent physical, thermal and especially electrical properties. It becomes a promising material for electronic and optoelectronic device under high-temperature, high-power and high-frequency and intense radiation conditions. During the Silicon Carbide crystal grown by the physical vapor transport process, the temperature gradients induce thermal stresses which is a major cause of the dislocations multiplication. Although large dimension crystal with low dislocation density is required for satisfying the fast development of electronic and optoelectronic device, high dislocation densities always appear in large dimension crystal. Therefore, reducing dislocation density is one of the primary tasks of process optimization. This dissertation aims at developing a transient finite element model based on the Alexander-Haasen model for computing the dislocation densities in a crystal during its growing process. Different key growth parameters such as vi temperature gradient, crystal size will be used to investigate their influence on dislocation multiplications. The acceptable and optimal crystal diameter and temperature gradient to produce the lowest dislocation density in SiC crystal can be obtained through a thorough numerical investigation using this developed finite element model. The results reveal that the dislocation density multiplication in SiC crystal are easily affected by the crystal diameter and the temperature gradient. Generally, during the iterative calculation for SiC growth, the dislocation density multiples very rapidly in the early growth phase and then turns to a relatively slow multiplication or no multiplication at all. The results also show that larger size and higher temperature gradient causes the dislocation density enters rapid multiplication phase sooner and the final dislocation density in the crystal is higher.
Springer Handbook of Crystal Growth
Author: Govindhan DhanarajPublisher: Springer Science & Business Media
ISBN: 3540747613
Category : Science
Languages : en
Pages : 1823
Book Description
Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Advances in Engineering Plasticity and its Applications (AEPA '96)
Author: T. AbePublisher: Elsevier
ISBN: 0080984568
Category : Science
Languages : en
Pages : 939
Book Description
AEPA '96 provides a forum for discussion on the state-of-art developments in plasticity. An emphasis is placed on the close interaction of the theories from macroplasticity, mesoplasticity and microplasticity together with their applications in various engineering disciplines such as solid mechanics, metal forming, structural analysis, geo-mechanics and micromechanics. These proceedings include over 140 papers from the conference including case studies showing applications of plasticity in inter-disciplinary or nonconventional areas.
International Aerospace Abstracts
Author: Microgravity Quarterly
Author: Publisher:
ISBN:
Category : Reduced gravity environments
Languages : en
Pages : 648
Book Description
Computational Mechanics ’95
Author: S.N. AtluriPublisher: Springer Science & Business Media
ISBN: 3642796540
Category : Technology & Engineering
Languages : en
Pages : 3181
Book Description
AI!, in the earlier conferences (Tokyo, 1986; Atlanta, 1988, Melbourne, 1991; and Hong Kong, 1992) the response to the call for presentations at ICES-95 in Hawaii has been overwhelming. A very careful screening of the extended abstracts resulted in about 500 paper being accepted for presentation. Out of these, written versions of about 480 papers reached the conference secretariat in Atlanta in time for inclusion in these proceedings. The topics covered at ICES-95 range over the broadest spectrum of computational engineering science. The editors thank the international scientific committee, for their advice and encouragement in making ICES-95 a successful scientific event. Special thanks are expressed to the International Association for Boundary Elements Methods for hosting IABEM-95 in conjunction with ICES-95. The editors here express their deepest gratitude to Ms. Stacy Morgan for her careful handling of a myriad of details of ICES-95, often times under severe time constraints. The editors hope that the readers of this proceedings will find a kaleidoscopic view of computational engineering in the year 1995, as practiced in various parts of the world. Satya N. Atluri Atlanta, Georgia, USA Genki Yagawa Tokyo,Japan Thomas A. Cruse Nashville, TN, USA Organizing Committee Professor Genki Yagawa, University of Tokyo, Japan, Chair Professor Satya Atluri, Georgia Institute of Technology, U.S.A.
Author: