Finite Element and Boundary Element Applications in Quantum Mechanics PDF Download

Author: L. Ramdas Ram-Mohan
Publisher: OUP Oxford
ISBN: 9780198525226
Category : Mathematics
Languages : en
Pages : 628

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Book Description
This book introduces the finite element and boundary element methods for applications to quantum mechanical methods. It should be useful to graduate students and researchers in basic quantum theory, quantum semiconductor modeling and chemistry.

Author: Isaac Elishakoff
Publisher: Oxford University Press, USA
ISBN: 9780198526315
Category : Language Arts & Disciplines
Languages : en
Pages : 282

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Book Description
The finite element method (FEM) can be successfully applied to various field problems in solid mechanics, fluid mechanics and electrical engineering. This text discusses finite element methods for structures with large stochastic variations.

Author: David Blaschke
Publisher: Springer Nature
ISBN: 3031112873
Category : Science
Languages : en
Pages : 225

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Book Description
This book features selected articles based on contributions presented at the 9th International Symposium on Optics and Its Applications (OPTICS-2022) in Yerevan-Ashtarak, Armenia. The annual OPTICS symposium brings together renowned experts from all over the world working in the fields of atomic optics, plasmonics, optics of nanostructures, as well as the optics of condensed matter, and provides a perfect setting for their discussions of the most recent developments in this area. The 9th iteration in this series, dedicated to the 80th birthday of Academician Eduard Kazaryan, focuses on topics dealing with the spectroscopy of real and artificial atoms, linear and nonlinear optical characteristics of quantum wells, and two-dimensional materials. The book highlights recent results of few-particle optical characteristics of artificial atoms in the framework of the exactly solvable Moshinsky model, as well as an electro-optical analog of the magneto-optical Faraday effect. In addition, a detailed study of the nucleation process, its characterization, as well as electronic and optical properties of graded composition quantum dots in the Stranski−Krastanov growth mode, is presented.

Author: Hari Singh Nalwa
Publisher: Academic Press
ISBN: 0080533647
Category : Science
Languages : en
Pages : 3593

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Book Description
Nanostructured materials is one of the hottest and fastest growing areas in today's materials science field, along with the related field of solid state physics. Nanostructured materials and their based technologies have opened up exciting new possibilites for future applications in a number of areas including aerospace, automotive, x-ray technology, batteries, sensors, color imaging, printing, computer chips, medical implants, pharmacy, and cosmetics. The ability to change properties on the atomic level promises a revolution in many realms of science and technology. Thus, this book details the high level of activity and significant findings are available for those involved in research and development in the field. It also covers industrial findings and corporate support. This five-volume set summarizes fundamentals of nano-science in a comprehensive way. The contributors enlisted by the editor are at elite institutions worldwide. Key Features * Provides comprehensive coverage of the dominant technology of the 21st century * Written by 127 authors from 16 countries, making this truly international * First and only reference to cover all aspects of nanostructured materials and nanotechnology

Author: J.C. Woo
Publisher: CRC Press
ISBN: 9780750310178
Category : Science
Languages : en
Pages : 548

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Book Description
Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for the compound semiconductor research community since the first one held in 1966 at Edinburgh, UK under the name of 'International Symposium on Gallium Arsenide and related Compounds'. These proceedings provide an international perspective on the latest research and an overview of recent, important developments in III-V compounds, II-VI compounds and IV-IV compounds. In the total of 106 papers, notable progress was reported in the development of zinc oxide and spintronics. Steady advances were seen in traditional topics such as III-V based electronic and optoelectronic devices, growth and processing, and characterization. Novel research trends were observed in quantum structures, such as quantum wires and dots, which are promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications the book is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry and electronic and electrical engineering.

Author: Darryl D. Holm
Publisher: Oxford University Press
ISBN: 0199212902
Category : Mathematics
Languages : en
Pages : 537

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Book Description
A graduate level text based partly on lectures in geometry, mechanics, and symmetry given at Imperial College London, this book links traditional classical mechanics texts and advanced modern mathematical treatments of the subject.

Author: Sidney Yip
Publisher: Springer Science & Business Media
ISBN: 1402032862
Category : Science
Languages : en
Pages : 2903

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Book Description
The first reference of its kind in the rapidly emerging field of computational approachs to materials research, this is a compendium of perspective-providing and topical articles written to inform students and non-specialists of the current status and capabilities of modelling and simulation. From the standpoint of methodology, the development follows a multiscale approach with emphasis on electronic-structure, atomistic, and mesoscale methods, as well as mathematical analysis and rate processes. Basic models are treated across traditional disciplines, not only in the discussion of methods but also in chapters on crystal defects, microstructure, fluids, polymers and soft matter. Written by authors who are actively participating in the current development, this collection of 150 articles has the breadth and depth to be a major contributor toward defining the field of computational materials. In addition, there are 40 commentaries by highly respected researchers, presenting various views that should interest the future generations of the community. Subject Editors: Martin Bazant, MIT; Bruce Boghosian, Tufts University; Richard Catlow, Royal Institution; Long-Qing Chen, Pennsylvania State University; William Curtin, Brown University; Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory; Nicolas Hadjiconstantinou, MIT; Mark F. Horstemeyer, Mississippi State University; Efthimios Kaxiras, Harvard University; L. Mahadevan, Harvard University; Dimitrios Maroudas, University of Massachusetts; Nicola Marzari, MIT; Horia Metiu, University of California Santa Barbara; Gregory C. Rutledge, MIT; David J. Srolovitz, Princeton University; Bernhardt L. Trout, MIT; Dieter Wolf, Argonne National Laboratory.

Author: Matthias Ehrhardt
Publisher: Springer
ISBN: 3319014277
Category : Mathematics
Languages : en
Pages : 337

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Book Description
This book addresses several mathematical models from the most relevant class of kp-Schrödinger systems. Both mathematical models and state-of-the-art numerical methods for adequately solving the arising systems of differential equations are presented. The operational principle of modern semiconductor nano structures, such as quantum wells, quantum wires or quantum dots, relies on quantum mechanical effects. The goal of numerical simulations using quantum mechanical models in the development of semiconductor nano structures is threefold: First they are needed for a deeper understanding of experimental data and of the operational principle. Secondly, they allow us to predict and optimize in advance the qualitative and quantitative properties of new devices in order to minimize the number of prototypes needed. Semiconductor nano structures are embedded as an active region in semiconductor devices. Thirdly and finally, the results of quantum mechanical simulations of semiconductor nano structures can be used with upscaling methods to deliver parameters needed in semi-classical models for semiconductor devices, such as quantum well lasers. This book covers in detail all these three aspects using a variety of illustrative examples. Readers will gain detailed insights into the status of the multiband effective mass method for semiconductor nano structures. Both users of the kp method as well as advanced researchers who want to advance the kp method further will find helpful information on how to best work with this method and use it as a tool for characterizing the physical properties of semiconductor nano structures. The book is primarily intended for graduate and Ph.D. students in applied mathematics, mathematical physics and theoretical physics, as well as all those working in quantum mechanical research or the semiconductor / opto-electronic industry who are interested in new mathematical aspects.

Author: Igor Vurgaftman
Publisher: Oxford University Press, USA
ISBN: 0198767277
Category : Science
Languages : en
Pages : 689

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Book Description
This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow.

Author: Wesley Petersen
Publisher: OUP Oxford
ISBN: 019151361X
Category : Computers
Languages : en
Pages : 278

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Book Description
In the last few years, courses on parallel computation have been developed and offered in many institutions in the UK, Europe and US as a recognition of the growing significance of this topic in mathematics and computer science. There is a clear need for texts that meet the needs of students and lecturers and this book, based on the author's lecture at ETH Zurich, is an ideal practical student guide to scientific computing on parallel computers working up from a hardware instruction level, to shared memory machines, and finally to distributed memory machines. Aimed at advanced undergraduate and graduate students in applied mathematics, computer science, and engineering, subjects covered include linear algebra, fast Fourier transform, and Monte-Carlo simulations, including examples in C and, in some cases, Fortran. This book is also ideal for practitioners and programmers.