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Author: E. S. Oxner Publisher: CRC Press ISBN: 1000147312 Category : Technology & Engineering Languages : en Pages : 292
Book Description
This book provides the reader with some insights into the many styles of field effect transistors (FETs) being used. It offers a rudimentary understanding of their operation and performance. The book explains the complex terminology that defines the various FET parameters.
Author: E. S. Oxner Publisher: CRC Press ISBN: 1000147312 Category : Technology & Engineering Languages : en Pages : 292
Book Description
This book provides the reader with some insights into the many styles of field effect transistors (FETs) being used. It offers a rudimentary understanding of their operation and performance. The book explains the complex terminology that defines the various FET parameters.
Author: E. S. Oxner Publisher: CRC Press ISBN: 9780824780500 Category : Technology & Engineering Languages : en Pages : 292
Book Description
This book provides the reader with some insights into the many styles of field effect transistors (FETs) being used. It offers a rudimentary understanding of their operation and performance. The book explains the complex terminology that defines the various FET parameters.
Author: Lining Zhang Publisher: Springer ISBN: 3319316532 Category : Technology & Engineering Languages : en Pages : 217
Book Description
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Author: J.-P. Colinge Publisher: Springer Science & Business Media ISBN: 038771751X Category : Technology & Engineering Languages : en Pages : 350
Book Description
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Author: Suman Lata Tripathi Publisher: John Wiley & Sons ISBN: 1119761778 Category : Computers Languages : en Pages : 384
Book Description
There is not a single industry which will not be transformed by machine learning and Internet of Things (IoT). IoT and machine learning have altogether changed the technological scenario by letting the user monitor and control things based on the prediction made by machine learning algorithms. There has been substantial progress in the usage of platforms, technologies and applications that are based on these technologies. These breakthrough technologies affect not just the software perspective of the industry, but they cut across areas like smart cities, smart healthcare, smart retail, smart monitoring, control, and others. Because of these “game changers,” governments, along with top companies around the world, are investing heavily in its research and development. Keeping pace with the latest trends, endless research, and new developments is paramount to innovate systems that are not only user-friendly but also speak to the growing needs and demands of society. This volume is focused on saving energy at different levels of design and automation including the concept of machine learning automation and prediction modeling. It also deals with the design and analysis for IoT-enabled systems including energy saving aspects at different level of operation. The editors and contributors also cover the fundamental concepts of IoT and machine learning, including the latest research, technological developments, and practical applications. Valuable as a learning tool for beginners in this area as well as a daily reference for engineers and scientists working in the area of IoT and machine technology, this is a must-have for any library.
Author: Changhong Cao Publisher: Elsevier ISBN: 0443188440 Category : Science Languages : en Pages : 539
Book Description
Transfer printing (TP) is a class of techniques for the deterministic assembly of disparate micro/nanomaterials into functional devices, and has become an emerging suite of technologies for micro/nanofabrication. Systems enabled by transfer printing range from complex molecular-scale materials, to high-performance hard materials, to fully integrated devices. A variety of sub-techniques for different purposes have grown significantly in the past decade, leading to non-conventional electronics, optoelectronics, photovoltaics, and photonics, and enabling the development of non-planar and flexible electronics.Highlights breakthrough results and systems enabled by novel TP techniques.Highlights breakthrough results and systems enabled by novel TP techniques.Transfer Printing Technologies and Applications is a complete guide to transfer printing techniques and their cutting-edge applications. The first section of the book provides a solid grounding in transfer printing methods and the fundamentals behind these technologies. The second part of the book focuses on state-of-the-art applications enabled by transfer printing techniques, including areas such as flexible sensors, flexible transistors, wearable devices, thin film-based energy systems, flexible displays, microLED-based displays, metal films, and more. A concluding chapter addresses current challenges and future opportunities in this innovative field.Highlights breakthrough results and systems enabled by novel TP techniques.Highlights breakthrough results and systems enabled by novel TP techniques.This book is of interest to researchers and advanced students across nanotechnology, materials science, electrical engineering, mechanical engineering, chemistry, and biomedicine, as well as scientists, engineers, and R&D professionals involved with nanomaterials, micro- or nano-fabrication, microelectromechanical systems (MEMS), display technology, biotechnology, and devices. Highlights breakthrough results and systems enabled by novel TP techniques. Highlights breakthrough results and systems enabled by novel TP techniques.Highlights breakthrough results and systems enabled by novel TP techniques.Highlights breakthrough results and systems enabled by novel TP techniques. Highlights breakthrough results and systems enabled by novel TP techniques. - Examines a range of transfer printing technologies and their specific features for different applications - Highlights breakthrough results and systems enabled by novel TP techniques - Offers an insightful outlook into trends and future directions in each sub-area of transfer printing
Author: Raymond S. Pengelly Publisher: IET ISBN: 1884932509 Category : Technology & Engineering Languages : en Pages : 705
Book Description
The following topics are dealt with: GaAs FET theory-small signal; GaAs FET theory-power; requirements and fabrication of GaAs FETs; design of transistor amplifiers; FET mixers; GaAs FET oscillators; FET and IC packaging; FET circuits; gallium arsenide integrated circuits; and other III-V materials and devices
Author: Antonio R. Alvarez Publisher: Springer Science & Business Media ISBN: 1475720297 Category : Technology & Engineering Languages : en Pages : 345
Book Description
The topic of bipolar compatible CMOS (BiCMOS) is a fascinating one and of ever-growing practical importance. The "technology pendulum" has swung from the two extremes of preeminence of bipolar in the 1950s and 60s to the apparent endless horizons for VLSI NMOS technology during the 1970s and 80s. Yet starting in the 1980s severallimits were clouding the horizon for pure NMOS technology. CMOS reemerged as a· viable high density, high performance technology. Similarly by the mid 1980s scaled bipolar devices had not only demonstrated new high speed records, but early versions of mixed bipolar/CMOS technology were being produced. Hence the paradigm of either high density . Q[ high speed was metamorphasizing into an opportunity for both speed and density via a BiCMOS approach. Now as we approach the 1990s there have been a number of practical demonstrations of BiCMOS both for memory and logic applications and I expect the trend to escalate over the next decade. This book makes a timely contribution to the field of BiCMOS technology and circuit development. The evolution is now indeed rapid so that it is difficult to make such a book exhaustive of current developments. Probably equally difficult is the fact that the new technology opens a range of novel circuit opportunities that are as yet only formative in their development. Given these obstacles it is a herculean task to try to assemble a book on BiCMOS.
Author: Alex Lidow Publisher: John Wiley & Sons ISBN: 1119594421 Category : Science Languages : en Pages : 518
Book Description
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Author: D. Nirmal Publisher: CRC Press ISBN: 1000475360 Category : Technology & Engineering Languages : en Pages : 303
Book Description
This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.
Author: E. S. Oxner
Author: E. S. Oxner
Author: E. S. Oxner
Author: Lining Zhang
Author: J.-P. Colinge
Author: Suman Lata Tripathi
Author: Changhong Cao
Author: Raymond S. Pengelly
Author: Antonio R. Alvarez
Author: Alex Lidow
Author: D. Nirmal