Festkörperprobleme PDF Download

Author: P. Grosse
Publisher: Springer
ISBN: 3540753567
Category : Science
Languages : en
Pages : 323

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Author: Heinz Kalt
Publisher: Springer Nature
ISBN: 3030241521
Category : Science
Languages : en
Pages : 559

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Book Description
This revised and updated edition of the well-received book by C. Klingshirn provides an introduction to and an overview of all aspects of semiconductor optics, from IR to visible and UV. It has been split into two volumes and rearranged to offer a clearer structure of the course content. Inserts on important experimental techniques as well as sections on topical research have been added to support research-oriented teaching and learning. Volume 1 provides an introduction to the linear optical properties of semiconductors. The mathematical treatment has been kept as elementary as possible to allow an intuitive approach to the understanding of results of semiconductor spectroscopy. Building on the phenomenological model of the Lorentz oscillator, the book describes the interaction of light with fundamental optical excitations in semiconductors (phonons, free carriers, excitons). It also offers a broad review of seminal research results augmented by concise descriptions of the relevant experimental techniques, e.g., Fourier transform IR spectroscopy, ellipsometry, modulation spectroscopy and spatially resolved methods, to name a few. Further, it picks up on hot topics in current research, like quantum structures, mono-layer semiconductors or Perovskites. The experimental aspects of semiconductor optics are complemented by an in-depth discussion of group theory in solid-state optics. Covering subjects ranging from physics to materials science and optoelectronics, this book provides a lively and comprehensive introduction to semiconductor optics. With over 120 problems, more than 480 figures, abstracts to each chapter, as well as boxed inserts and a detailed index, it is intended for use in graduate courses in physics and neighboring sciences like material science and electrical engineering. It is also a valuable reference resource for doctoral and advanced researchers.

Author: Claus F. Klingshirn
Publisher: Springer Science & Business Media
ISBN: 3642283624
Category : Science
Languages : en
Pages : 867

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Book Description
The updated and enlarged new edition of this book provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV. It includes coverage of linear and nonlinear optical properties, dynamics, magneto- and electrooptics, high-excitation effects, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible. The subjects covered extend from physics to materials science and optoelectronics. New or updated chapters add coverage of current topics, while the chapters on bulk materials have been revised and updated.

Author: Frank Forstmann
Publisher: Springer
ISBN: 3540471758
Category : Technology & Engineering
Languages : en
Pages : 136

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The second half of this book sets out several more sophisticated treatments of the response of a single metal surface to electromagnetic radiation. The relations between general forms of the response functions and additional boundary conditions are discussed for a variety of phenomenological models, the HD, the specular reflection model, the "dielectric approximation", the "semi-classical infinite barrier" model and several others. Also, microscopic surface response calculations based on a quantum mechanical model containing a surface potential for the electrons are presented and their relationships to the HD and the SCIB model are illustrated. Finally, we deal with two surface response functions d±(m) and dll(m), which contain the integrated effect of spatial dispersion and surface properties on measurable quantities such as reflection coefficient or surface plasmon dispersion. Their relation to measurements as well as to microscopic or phenomenological response calculations is discussed."--Pages v-vi

Author: K. Cho
Publisher: Springer Science & Business Media
ISBN: 3642813682
Category : Science
Languages : en
Pages : 285

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Contents: Cho, K.: Introduction. - Cho, K.: Internal Structure of Excitons. - Dean, P. J. /A¬01Herbert, D. C.A¬02: Bound Excitons in A¬Semiconductors. - Fischer, B. /Lagois, J.: Surface Exciton Polaritons. - Yu, P. Y.: Study of Excitons and Exciton-Phonon Interactions by Resonant Raman and Brillouin Spectroscopies.

Author: L. Crovini
Publisher: Elsevier
ISBN: 0444597832
Category : Science
Languages : en
Pages : 673

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The spectroscopy of trapped ions or laser-cooled atoms offers the prospect of visible frequency standards to match or even exceed the accuracy of the caesium standard. The development of satellite methods for time comparisons has improved by more than an order of magnitude the accuracy with which national laboratories can routinely compare their clocks. Mechanical metrology has not been left behind. Driven by the need to improve manufacturing technology, major advances have taken place in computer control machining and mechanical measuring systems. These, and many other fascinating developments in the field of metrology are presented in this book.

Author: Heinz Kalt
Publisher: Springer Nature
ISBN: 3031512960
Category :
Languages : en
Pages : 567

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Author: O. Madelung
Publisher: Elsevier
ISBN: 1483150658
Category : Science
Languages : en
Pages : 313

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Festkörperprobleme XI: Advances in Solid State Physics reviews advances in solid state physics and covers topics ranging from localized vibrational modes in semiconductors to isoelectric impurities in semiconductors, deep impurities, and liquid crystals. Elastic and inelastic electron tunneling through potential barriers in solids is also discussed, along with plasma physics and astrophysics. This book is comprised of 14 chapters and begins with a review of the theoretical and experimental requirements for the observation of high frequency, localized vibrational modes of impurities in a crystal lattice. The reader is then introduced to the properties of deep impurity levels in semiconductors. Some typical examples of isoelectronic impurities are presented, and theories of isoelectronic traps are considered. Subsequent chapters focus on the properties of the various types of liquid crystalline phases (nematic, cholesteric, and smectic); a few astrophysical problems for which the properties of the astrophysical plasma are important; and the use of stochastic models to probe the kinetics of phase transitions. Experimental results for elastic and inelastic electron tunneling through potential barriers in solids are also presented. This monograph will be of interest to physicists.

Author: Eckehard Schöll
Publisher: Springer Science & Business Media
ISBN: 3642719279
Category : Science
Languages : en
Pages : 323

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Book Description
Semiconductors can exhibit electrical instabilities like current runaway, threshold switching, current filamentation, or oscillations, when they are driven far from thermodynamic equilibrium. This book presents a coherent theoretical des- cription of such cooperative phenomena induced by generation and recombination processes of charge carriers in semicon- ductors.

Author: R.T. Phillips
Publisher: Springer Science & Business Media
ISBN: 1475797486
Category : Science
Languages : en
Pages : 362

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Book Description
The NATO Advanced Research Workshop on Coherent Optical Processes in Semiconductors was held in Cambridge, England on August 11-14,1993. The idea of holding this Workshop grew from the recent upsurge in activity on coherent transient effects in semiconductors. The development of this field reflects advances in both light sources and the quality of semiconductor structures, such that tunable optical pulses are now routinely available whose duration is shorter than the dephasing time for excitonic states in quantum wells. It was therefore no surprise to the organisers that as the programme developed, there emerged a heavy emphasis on time-resolved four-wave mixing, particularly in quantum wells. Nevertheless, other issues concerned with coherent effects ensured that several papers on related problems contributed some variety. The topics discussed at the workshop centred on what is a rather new field of study, and benefited enormously by having participants representing many of the principal groups working in this area. Several themes emerged through the invited contributions at the Workshop. One important development has been the careful examination of the two-level model of excitonic effects; a model which has been remarkably successful despite the expected complexities arising from the semiconductor band structure. Indeed, modest extensions to the two level model have been able to offer a useful account for some of the complicated polarisation dependence of four-wave mixing signals from GaAs quantum wells. This work clearly is leading to an improved understanding of excitons in confined systems.