Author: Edward R. Myers
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 376
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Ferroelectric Thin Films: Volume 200
Author: Edward R. Myers
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 376
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 376
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Ferroelectric Thin Films VIII: Volume 596
Author: R. W. Schwartz
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 610
Book Description
This book, the eighth in a popular series from MRS, features the latest technical information on ferroelectric thin films from an international mix of academia, industry and government organizations. Recent results for DRAM and FERAM devices, as well as enhancements in material performance for these applications, are presented. Significant advances in understanding leakage current, frequency dependence of the coercive field, hydrogen annealing effects, piezoelectric constants, and domain switching responses are highlighted. The development of ferroelectric thin films for piezoelectric applications are also reviewed, as are improved film-fabrication procedures including chemical vapor deposition and chemical solution deposition. Topics include: BST thin films and DRAM; integration and electrodes; Bi-based thin-film ferroelectrics; Pb-based thin-film ferroelectrics; fundamental properties of thin-film ferroelectrics; ferroelectric gate materials and devices; and piezoelectric, pyro-electric and capacitor devices and novel processing strategies.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 610
Book Description
This book, the eighth in a popular series from MRS, features the latest technical information on ferroelectric thin films from an international mix of academia, industry and government organizations. Recent results for DRAM and FERAM devices, as well as enhancements in material performance for these applications, are presented. Significant advances in understanding leakage current, frequency dependence of the coercive field, hydrogen annealing effects, piezoelectric constants, and domain switching responses are highlighted. The development of ferroelectric thin films for piezoelectric applications are also reviewed, as are improved film-fabrication procedures including chemical vapor deposition and chemical solution deposition. Topics include: BST thin films and DRAM; integration and electrodes; Bi-based thin-film ferroelectrics; Pb-based thin-film ferroelectrics; fundamental properties of thin-film ferroelectrics; ferroelectric gate materials and devices; and piezoelectric, pyro-electric and capacitor devices and novel processing strategies.
Ferroelectric Thin Films V: Volume 433
Author: Seshu B. Desu
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 480
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 480
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Ferroelectric Thin Films VII: Volume 541
Author: Robert E. Jones
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 800
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 800
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Ferroelectric Thin Films
Author: Carlos Paz de Araujo
Publisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598
Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Publisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598
Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Ferroelectric Thin Films X:
Author: Stephen R. Gilbert
Publisher: Cambridge University Press
ISBN: 9781107412118
Category : Technology & Engineering
Languages : en
Pages : 444
Book Description
This book, the tenth in a highly successful series from the Materials Research Society, presents technical information on ferroelectric thin films from academia, government laboratories, and industry. Substantial progress in several areas of integrated ferroelectric and high-permittivity device technology are demonstrated. In particular, the latest developments in high-density FeRAM devices are reviewed, as are developments in the use of these films in piezoelectric, pyroelectric, tunable RF, integrated capacitor, and optical waveguide applications. Thin-film processing techniques used to deposit a variety of ferroelectric and electrode materials are also highlighted, and recent advances in the fundamental understanding of ferroelectricity and degradation phenomena in thin films are addressed. Topics include: processing of Pb-based ferroelectrics; processing of Bi-based ferroelectrics; ferroelectric nonvolatile memories - technology, fundamentals and integration; integration and electrodes; epitaxial ferroelectric films; domains and nanostructures; piezoelectrics and pyroelectrics; ferroelectric gates; thin films for RF applications and high-permittivity materials.
Publisher: Cambridge University Press
ISBN: 9781107412118
Category : Technology & Engineering
Languages : en
Pages : 444
Book Description
This book, the tenth in a highly successful series from the Materials Research Society, presents technical information on ferroelectric thin films from academia, government laboratories, and industry. Substantial progress in several areas of integrated ferroelectric and high-permittivity device technology are demonstrated. In particular, the latest developments in high-density FeRAM devices are reviewed, as are developments in the use of these films in piezoelectric, pyroelectric, tunable RF, integrated capacitor, and optical waveguide applications. Thin-film processing techniques used to deposit a variety of ferroelectric and electrode materials are also highlighted, and recent advances in the fundamental understanding of ferroelectricity and degradation phenomena in thin films are addressed. Topics include: processing of Pb-based ferroelectrics; processing of Bi-based ferroelectrics; ferroelectric nonvolatile memories - technology, fundamentals and integration; integration and electrodes; epitaxial ferroelectric films; domains and nanostructures; piezoelectrics and pyroelectrics; ferroelectric gates; thin films for RF applications and high-permittivity materials.
Ferroelectric Thin Films VI: Volume 493
Author: Randolph Edward Treece
Publisher: Cambridge University Press
ISBN: 9781558993983
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
This book on ferroelectric thin films, presents a wide range of topics spanning basic academic research to applied integration issues. Fundamental materials studies, growth methods, device and materials integration research, and developments in the design and growth of new materials, all involving epitaxial, polycrystalline and nanocrystalline ferroelectric thin films, are featured. In addition, since ULSI chip manufacturers are seriously considering incorporating ferroelectric DRAM technology into existing fabrication facilities, the industrial interest and resulting research is causing an explosion in ferroelectrics. To that end, the volume presents the latest technical information on ferroelectric thin films from academia, government organizations and industry as well. Topics include: high-permittivity DRAM materials; domains and size effects; barriers and electrodes; bilayered ferroelectrics; Pb-based ferroelectrics; microwave and optical devices; materials for piezoelectric MEMs; and novel ferroelectric devices.
Publisher: Cambridge University Press
ISBN: 9781558993983
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
This book on ferroelectric thin films, presents a wide range of topics spanning basic academic research to applied integration issues. Fundamental materials studies, growth methods, device and materials integration research, and developments in the design and growth of new materials, all involving epitaxial, polycrystalline and nanocrystalline ferroelectric thin films, are featured. In addition, since ULSI chip manufacturers are seriously considering incorporating ferroelectric DRAM technology into existing fabrication facilities, the industrial interest and resulting research is causing an explosion in ferroelectrics. To that end, the volume presents the latest technical information on ferroelectric thin films from academia, government organizations and industry as well. Topics include: high-permittivity DRAM materials; domains and size effects; barriers and electrodes; bilayered ferroelectrics; Pb-based ferroelectrics; microwave and optical devices; materials for piezoelectric MEMs; and novel ferroelectric devices.
Ferroelectric Thin Films IV: Volume 361
Author: Bruce Tuttle
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 658
Book Description
Papers from the fall 1994 symposium present research and developments from academia, government, organizations, and industry in ferroelectric thin films, organized in sections on characterization, layered structure ferroelectrics, photonic phenomena, process integration, dram thin film technology, solution deposition, and piezoelectric and IR thin film technology. Highlights include the first public technical disclosures of Y1 nonvolatile memory material. Annotation copyright by Book News, Inc., Portland, OR
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 658
Book Description
Papers from the fall 1994 symposium present research and developments from academia, government, organizations, and industry in ferroelectric thin films, organized in sections on characterization, layered structure ferroelectrics, photonic phenomena, process integration, dram thin film technology, solution deposition, and piezoelectric and IR thin film technology. Highlights include the first public technical disclosures of Y1 nonvolatile memory material. Annotation copyright by Book News, Inc., Portland, OR
Ferroelectric Thin Films III: Volume 310
Author: Edward R. Myers
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 528
Book Description
Papers of the symposium held April 13-16, 1993 in San Francisco, Calif., on: novel analysis techniques to characterize materials and device properties, process integration, degradation and modelling, CVD, spin pyrolysis, niobium and barium based ferroelectrics, materials and processes, sputter deposition, pulsed laser and other deposition techniques. Annotation copyright by Book News, Inc., Portland, OR
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 528
Book Description
Papers of the symposium held April 13-16, 1993 in San Francisco, Calif., on: novel analysis techniques to characterize materials and device properties, process integration, degradation and modelling, CVD, spin pyrolysis, niobium and barium based ferroelectrics, materials and processes, sputter deposition, pulsed laser and other deposition techniques. Annotation copyright by Book News, Inc., Portland, OR
Ferroelectric Thin Films
Author: Masanori Okuyama
Publisher: Springer Science & Business Media
ISBN: 9783540241638
Category : Computers
Languages : en
Pages : 272
Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Publisher: Springer Science & Business Media
ISBN: 9783540241638
Category : Computers
Languages : en
Pages : 272
Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.