Author: Khang Duy TranPublisher:
ISBN:
Category :
Languages : en
Pages : 360
Book Description
Ferroelectric and Pyroelectric Properties of Solution Derived Bi4Ti3O12 Thin Films
Author: Khang Duy TranFerroelectric Thin Films
Author: Carlos Paz de AraujoPublisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598
Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Journal of the Physical Society of Japan
Author: Thin Film Ferroelectric Materials and Devices
Author: R. RameshPublisher: Springer Science & Business Media
ISBN: 146156185X
Category : Technology & Engineering
Languages : en
Pages : 250
Book Description
The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.
Dissertation Abstracts International
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 856
Book Description
Japanese Journal of Applied Physics
Author: Ferroelectric Thin Films IV: Volume 361
Author: Bruce TuttlePublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 658
Book Description
Papers from the fall 1994 symposium present research and developments from academia, government, organizations, and industry in ferroelectric thin films, organized in sections on characterization, layered structure ferroelectrics, photonic phenomena, process integration, dram thin film technology, solution deposition, and piezoelectric and IR thin film technology. Highlights include the first public technical disclosures of Y1 nonvolatile memory material. Annotation copyright by Book News, Inc., Portland, OR
Study on the Preparation and Ferroelectric Properties of Bi4Ti3O12 Thin Film
Author: 賈維國Formation of Ferroelectricity in Hafnium Oxide Based Thin Films
Author: Tony SchenkPublisher: BoD – Books on Demand
ISBN: 3743127296
Category : Technology & Engineering
Languages : en
Pages : 194
Book Description
In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.
Author: