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Fabrication of Semiconductor Devices by Neutron Transmutation Doping

Fabrication of Semiconductor Devices by Neutron Transmutation Doping PDF Author:
Publisher:
ISBN:
Category : Semiconductor doping, Neutron transmutation
Languages : en
Pages : 174

Book Description


Fabrication of Semiconductor Devices by Neutron Transmutation Doping

Fabrication of Semiconductor Devices by Neutron Transmutation Doping PDF Author:
Publisher:
ISBN:
Category : Semiconductor doping, Neutron transmutation
Languages : en
Pages : 174

Book Description


Neutron Transmutation Doping of Semiconductor Materials

Neutron Transmutation Doping of Semiconductor Materials PDF Author: Robert D. Larrabee
Publisher: Springer Science & Business Media
ISBN: 1461326958
Category : Technology & Engineering
Languages : en
Pages : 337

Book Description
viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.

Fabrication of Silicon Microcircuits by Neutron Transmutation Doping

Fabrication of Silicon Microcircuits by Neutron Transmutation Doping PDF Author: Carl N. Klahr
Publisher:
ISBN:
Category : Semiconductor doping, Neutron transmutation
Languages : en
Pages : 84

Book Description


Fabrication of Semiconductor Devices by Neutron Transmutation Doping

Fabrication of Semiconductor Devices by Neutron Transmutation Doping PDF Author:
Publisher:
ISBN:
Category : Semiconductor doping, Neutron transmutation
Languages : en
Pages : 178

Book Description


Neutron Transmutation Doping in Semiconductors

Neutron Transmutation Doping in Semiconductors PDF Author: J. Meese
Publisher: Springer Science & Business Media
ISBN: 1468482491
Category : Technology & Engineering
Languages : en
Pages : 368

Book Description
This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.

Process Radiation Development Program Summaries

Process Radiation Development Program Summaries PDF Author:
Publisher:
ISBN:
Category : Radiation
Languages : en
Pages : 60

Book Description


Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 748

Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Isotopes and Radiation Technology

Isotopes and Radiation Technology PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 816

Book Description


Nuclear Science Abstracts

Nuclear Science Abstracts PDF Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 1200

Book Description


Monthly Catalog of United States Government Publications, Cumulative Index

Monthly Catalog of United States Government Publications, Cumulative Index PDF Author: United States. Superintendent of Documents
Publisher:
ISBN:
Category : United States
Languages : en
Pages : 1504

Book Description