Author: Khin Maung Yin
Publisher:
ISBN:
Category : Nuclear counters
Languages : en
Pages : 164
Book Description
Fabrication of Lithium Drifted Germanium Detectors of Planar Structures
Author: Khin Maung Yin
Publisher:
ISBN:
Category : Nuclear counters
Languages : en
Pages : 164
Book Description
Publisher:
ISBN:
Category : Nuclear counters
Languages : en
Pages : 164
Book Description
Lithium-Drifted Germanium Detectors: Their Fabrication and Use
Author: I. C. Brownridge
Publisher: Springer Science & Business Media
ISBN: 1461345987
Category : Technology & Engineering
Languages : en
Pages : 222
Book Description
A lithium-drifted germanium detector is a semiconductor de vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.
Publisher: Springer Science & Business Media
ISBN: 1461345987
Category : Technology & Engineering
Languages : en
Pages : 222
Book Description
A lithium-drifted germanium detector is a semiconductor de vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.
Lithium-Drifted Germanium Detectors
Author: I C Brownridge
Publisher:
ISBN: 9781461345992
Category :
Languages : en
Pages : 228
Book Description
Publisher:
ISBN: 9781461345992
Category :
Languages : en
Pages : 228
Book Description
Preparation of Planar Lithium-drifted Germanium Detectors
Author: Glen L. Jackson
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 134
Book Description
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 134
Book Description
Lithium-drifted Germanium Detectors
Author: International Atomic Energy Agency
Publisher:
ISBN:
Category : Gamma rays
Languages : en
Pages : 248
Book Description
Publisher:
ISBN:
Category : Gamma rays
Languages : en
Pages : 248
Book Description
Lithium-drifted Germanium Detectors
Author: International Atomic Energy Agency
Publisher:
ISBN:
Category : Gamma rays
Languages : en
Pages : 242
Book Description
Publisher:
ISBN:
Category : Gamma rays
Languages : en
Pages : 242
Book Description
Masters Abstracts
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 194
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 194
Book Description
Nuclear Science Abstracts
NBS Special Publication
Author:
Publisher:
ISBN:
Category : Weights and measures
Languages : en
Pages : 688
Book Description
Publisher:
ISBN:
Category : Weights and measures
Languages : en
Pages : 688
Book Description
Fabrication of Lithium-drift Germanium Radiation Detectors
Author: James Benedict Mullady
Publisher:
ISBN:
Category :
Languages : en
Pages : 55
Book Description
A simple technique for fabricating lithium-drift germanium radiation detectors for use in gamma-ray spectroscopy is described in detail. Lithium-ion drift is conducted in room atmosphere at constant temperature and voltage for 470 hours to obtain a 2 mm thick sensitive region 7.5cm2 in area. One detector made by this method gives 10.3 kev (fwhm) resolution for the Cs137 662 kev gamma-ray. Leakage current at 77K and 65 volts reverse bias is 1.65 x 0.0000001 A.
Publisher:
ISBN:
Category :
Languages : en
Pages : 55
Book Description
A simple technique for fabricating lithium-drift germanium radiation detectors for use in gamma-ray spectroscopy is described in detail. Lithium-ion drift is conducted in room atmosphere at constant temperature and voltage for 470 hours to obtain a 2 mm thick sensitive region 7.5cm2 in area. One detector made by this method gives 10.3 kev (fwhm) resolution for the Cs137 662 kev gamma-ray. Leakage current at 77K and 65 volts reverse bias is 1.65 x 0.0000001 A.